A New Material with a Composite Crystal Structure Causing Ultralow

Jun 17, 2018 - A new state-of-the-art thermoelectric material, Tl2Ag12Te7+δ, which possesses ... of the originally reported Tl4Ag24–xTe15–y (x = ...
2 downloads 0 Views 3MB Size
Subscriber access provided by UNIV OF DURHAM

Article

A new material with a composite crystal structure causing ultralow thermal conductivity and outstanding thermoelectric properties: TlAg Te 2

12

7+#

Yixuan Shi, Abdeljalil Assoud, Siméon Ponou, Sven Lidin, and Holger Kleinke J. Am. Chem. Soc., Just Accepted Manuscript • DOI: 10.1021/jacs.8b04639 • Publication Date (Web): 17 Jun 2018 Downloaded from http://pubs.acs.org on June 18, 2018

Just Accepted “Just Accepted” manuscripts have been peer-reviewed and accepted for publication. They are posted online prior to technical editing, formatting for publication and author proofing. The American Chemical Society provides “Just Accepted” as a service to the research community to expedite the dissemination of scientific material as soon as possible after acceptance. “Just Accepted” manuscripts appear in full in PDF format accompanied by an HTML abstract. “Just Accepted” manuscripts have been fully peer reviewed, but should not be considered the official version of record. They are citable by the Digital Object Identifier (DOI®). “Just Accepted” is an optional service offered to authors. Therefore, the “Just Accepted” Web site may not include all articles that will be published in the journal. After a manuscript is technically edited and formatted, it will be removed from the “Just Accepted” Web site and published as an ASAP article. Note that technical editing may introduce minor changes to the manuscript text and/or graphics which could affect content, and all legal disclaimers and ethical guidelines that apply to the journal pertain. ACS cannot be held responsible for errors or consequences arising from the use of information contained in these “Just Accepted” manuscripts.

is published by the American Chemical Society. 1155 Sixteenth Street N.W., Washington, DC 20036 Published by American Chemical Society. Copyright © American Chemical Society. However, no copyright claim is made to original U.S. Government works, or works produced by employees of any Commonwealth realm Crown government in the course of their duties.

Page 1 of 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Journal of the American Chemical Society

A new material with a composite crystal structure causing ultralow thermal conductivity and outstanding thermoelectric properties: Tl2Ag12Te7+δδ Yixuan Shi, Abdeljalil Assoud, Simeon Ponou, Sven Lidin,† Holger Kleinke* * Department of Chemistry and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, ON, Canada N2L 3G1 † Centre for Analysis and Synthesis, Department of Chemistry, Lund University, Box 124, SE-22100 Lund, Sweden KEYWORDS: composite structure, semiconductor, thermal conductivity, thermoelectric properties

ABSTRACT: A new state-of-the-art thermoelectric material, Tl2Ag12Te7+δ, which possesses an extremely low thermal conductivity of about 0.25 W m–1K–1 and a high figure-of-merit of up to 1.1 at 525 K, was obtained using a conventional solid-state reaction approach. Its sub cell is a variant of the Zr2Fe12P7 type, but ultimately its structure was refined as a composite structure of a Tl2Ag12Te6 framework and a linear Te atom chain running along the c axis. The super space group of the framework was determined to be P63(00γ)s with a = b = 11.438(1) Å, c = 4.6256(5) Å, and that of the Te chain sub structure has the same a and b axes, but c = 3.212(1) Å, space group P6(00γ)s. The modulation leads to the formation of Te2 and Te3 fragments in this chain, and a refined formula of Tl2Ag11.5Te7.4. The structure consists of a complex network of three-dimensionally connected AgTe4 tetrahedra forming channels filled with the Tl atoms. The electronic structures of four different models comprising different Te chains, Tl2Ag12Te7, Tl2Ag12Te7.33, and 2× Tl2Ag12Te7.5, were computed using the WIEN2k package. Depending on the Te content within the chain, the models are either semiconducting or metallic. Physical property measurements revealed semiconducting properties, with an ultralow thermal conductivity, and excellent thermoelectric properties at elevated temperatures.

INTRODUCTION The depletion of fossil energy and the deterioration of the environment have led to increased focus on the development of clean energy for sustainable use. Thermoelectric materials are proposed to contribute towards more sustainable energy. The thermoelectric efficiency of a material is evaluated by the dimensionless figure-of-merit, zT, which is determined by zT = Tα2σ/κ, where T, α, σ and κ represent the absolute temperature, the Seebeck coefficient, the electrical conductivity, and the thermal conductivity, respectively.1–3 Ideally, the lattice of a thermoelectric material would only impede the movement of the phonons, resulting in the desired low thermal conductivity, and let the electrons move freely, yielding high electrical conductivity. Such materials were coined phonon glass, electron crystal (PGEC) materials.4,5 Composite structures, i.e. materials considering of two different structures with different repeat units, may very well constitute the epitome of PGEC materials. Thus far, several materials with incommensurate super cells or modulations were indeed found to exhibit ultralow thermal conductivity, such as layered misfits6,7 like [Bi0.84CaO2]2[CoO2]1.69, [(PbSe)0.99]m(WSe2)n,8 (MS)1+x(TiS2)2 (M = Sn, Pb, Bi),9 Ca3Co4–xCuxO9+δ,10 and Bi2[AE]2Co2Oy (M = Ca, Ca0.5Sr0.5, Sr).11 None of those materials, however, have attained figureof-merit values zT > 0.5, as the electrical conductivity often was lacking, possibly because the mismatch causing low phonon mobility also resulted in low electron mobility.

The herewith introduced telluride Tl2Ag12Te7+δ adopts an incommensurately modulated crystal structure. The two parts of this composite structure are i) a covalent three-dimensional network of the composition Tl2Ag12Te6, and ii) a distorted linear Te atom chain. The distortion of the latter strongly impacts its direct neighbours of the Tl2Ag12Te6 network, thereby contributing to the desired low thermal conductivity. In contrast to the other above cited examples of misfits, this material consists of atoms in low valence states and with small electronegativity differences, thusly allowing for higher mobility of the electrons. As a consequence, Tl2Ag12Te7+δ represents the first misfit material with a figure-of-merit above 1, as introduced with this contribution, ultimately supporting the concept of using composite structures in thermoelectrics.

EXPERIMENTAL SECTION Syntheses and Analyses. The elements, stored in an argon filled glove box, were used directly as required (Tl, granules, 6 mm, 99.99%, Alfa Aesar; Ag, shots, 99.99%, Strem Chemicals; Te, broken ingots, 99.99%, Strem Chemicals). To determine whether or not a phase width of the originally reported Tl4Ag24–xTe15–y (x = 2, y = 0) exists,12 we began with three different Tl : Ag : Te molar ratios of 4 : 22 : 14.5, 4 : 22 : 15, and 4 : 22 : 15.5. The mixtures of the elements were transferred into three silica tubes, which were then closed with a vacuum valve and brought from the glove box to the vacuum line. There, all tubes were sealed under a dynamic vacuum of 2 × 10–3 mbar, and then placed into a resistance furnace. The

ACS Paragon Plus Environment

Journal of the American Chemical Society 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

samples were heated to 1173 K within twenty hours and then kept at 1173 K for ten more hours. For the single crystal growth, the furnace was slowly cooled down over 100 hours. This yielded ingots that appeared to be homogenous. Later for the property measurements, new, larger samples were simply water-quenched directly from 1173 K to save reaction time. The phase identification was performed utilizing the INEL X-ray powder diffractometer with a position-sensitive detector and Cu-Kα1 radiation. The diffraction patterns were collected at room temperature for 60 minutes in the 2θ range from 5° to 120°. No systematic differences were detected between them and the one calculated from the published model for Tl4Ag24– 12 or the one calculated from our structure solution xTe15–y (Figure S1 in the Supporting Information). Scanning electron microscopy studies were performed on three samples with the nominal compositions "Tl4Ag22Te14.5", "Tl4Ag22Te15", and "Tl4Ag22Te15.5", with an FEI Quanta Feg 250 ESEM (with EDX), under an acceleration voltage of 20 kV. EDX mappings showed that all three elements were distributed evenly through the whole area. No significant differences were found between the samples (Table 1). Table 1. EDX results on the "Tl4Ag24–xTe15–y" samples. Values in parenthesis are calculated from the nominal compositions for comparison. Composition "Tl4Ag22Te14.5"

Tl 9.3% (9.9%)

"Tl4Ag22Te15"

9.7% (9.8%)

"Tl4Ag22Te15.5"

9.3% (9.6%)

Ag 56.0% (54.3%) 55.8% (53.7%) 56.1% (53.0%)

Te 34.7% (35.8%) 34.5% (36.6%) 34.6% (37.4%)

Single crystal structure studies. Data collections were carried out at room temperature on a Bruker Smart Apex CCD and a Bruker Kappa Apex II CCD, respectively, utilizing MoKα radiation. A plate-like shaped black crystal was selected under an optical microscope for the data collection. The data were collected by scanning ω and ϕ of 0.3° in different sets of frames for full data coverage and low redundancy, using the search strategy part of the APEX II suite. The exposure time was 45 seconds per frame. The data were corrected for Lorentz and polarization effects, and absorption corrections were applied to the data using the empirical multi-scan method SADABS, part of the APEX II software,13 since the crystal faces could not be determined reliably for numerical absorption corrections. In analogy with the related selenides K2Ag12Se7 (space group P63/m)14 and K2Ag12Se7.11 (space group P63),15 the systematic absences pointed to the existence of a 63 screw axis. The structure solution was found via direct methods in the space group P63, and then refined using the least square procedure of the SHELXTL package.16 The tidy routine of the Platon program package17 was utilized to standardize the atomic positions. Its addsymm part was applied to identify potential additional symmetry elements; none were found. The small Flack parameter of 0.15(4) is also indicative of a noncentrosymmetric space group. Three of the five positions of this structure model, namely the two Ag sites and Te2, exhibit enlarged anisotropic dis-

Page 2 of 18

placement parameters, quite uniformly so in case of the Ag sites, but very anisotropic in case of Te2, with U33 > 10 × U11 (and U11 = U22). Refining the occupancies of all these three sites resulted in significant deficiencies, namely 97% occupancy for Ag1, 95% for Ag2, and 71% for Te2. This yielded a refined formula of Tl2Ag11.54(7)Te7.42(2), and a final agreement factor of R(Fo) = 0.039 (observed data). Crystallographic data of this model are summarized in Table 2, atomic positions are listed in Table 3, and selected bond distances in Table 4. Analysis of a second crystal from a reaction repeated under the same conditions confirmed the above results, with occupancies of 95%, 96%, and 67% for Ag1, Ag2, and Te2 respectively, with R(Fo) = 0.045 (observed data).

Table 2. Crystallographic details of the sub cell refinement of Tl2Ag11.5Te7.4. Formula Tl2Ag11.53(7)Te7.42(3) Formula Weight 2599.27 Crystal System Hexagonal Space group P63 (no. 173) a, c [Å] 11.4249(4), 4.6210(2) V [Å3] 522.36(3) Z 1 Density [g cm–3] 8.26 Absorption coefficient [mm–1] 36.03 F(000) 1090 Crystal size [mm] 0.04 × 0.04 × 0.01 Temperature [K] 296(2) Radiation [Å] 0.71073 Total, unique data, R(int) 2268, 568, 0.046 548 Observed data [I > 2σ(I)] R(Fo),a Rw(Fo2),b GOF (obs. 0.039, 0.083, 1.08 data) Min., max. residual electron -2.56, 3.26 density [e Å–3] a) R(Fo) = Σ||Fo|–|Fc|| / Σ|Fo|; b) Rw(Fo2) = [ Σ[w(Fo2 – Fc2)2] / Σ[w(Fo2)2] ]1/2, with Fo and Fc being the observed and calculated structure factors, respectively.

Table 3. Fractional atomic coordinates, equivalent isotropic displacement parameters and occupancies of the sub cell refinement of Tl2Ag11.5Te7.4.

Tl1 Ag1 Ag2 Te1 Te2

x 1/3 0.1511(2) 0.4158(2) 0.4219(1) 0

ACS Paragon Plus Environment

y 2/3 0.2800(2) 0.0677(1) 0.3148(1) 0

z 0.1872(7) 0.197(1) 0.182(1) 0.1853(5) 0.15(1)

Ueq/Å2 0.0385(3) 0.0531(7) 0.0458(6) 0.0254(3) 0.153(6)

occ. 1 0.973(8) 0.950(8) 1 0.71(1)

Page 3 of 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Journal of the American Chemical Society

Table 4. Interatomic distances (Å) of the sub cell of Tl2Ag11.5Te7.4. Tl1–Te2 Tl1–Te1

3× 3×

3.545(3) 3.557(3)

Ag1–Te2 Ag1–Te1 Ag1–Te1 Ag1–Te1

2.782(4) 2.917(2) 2.964(4) 3.047(4)

Ag2–Te1 Ag2–Te1 Ag2–Te1 Ag2–Te1

2.789(2) 2.878(5) 2.879(2) 2.903(5)

Ag1–Ag2 Ag1–Ag2 Ag1–Ag2

2.967(2) 3.001(6) 3.107(6)

and thus a poor fit between model and data is to be expected. Atomic positions are summarized in Tables 5. Table 5. Fractional atomic coordinates, equivalent isotropic displacement parameters and occupancies of Tl2Ag11.5Te7.4 from the composite refinement.

Tl1 Ag1 Ag2 Te1 Te2

The large anisotropy of Te2, along with the (physically impossible) short distances to itself of c/2 = 2.31 Å by symmetry, caused us to closely inspect the reciprocal space images, suspecting a super cell along the c axis that would resolve both issues. Indeed, additional so far not indexed satellite reflections were observed, with spacing indicative of an incommensurate super cell along the c axis. The modulated structure was solved using charge flipping in hyperspace as implemented in the program Superflip,18 using the same crystal data. The initial model of the modulated structure reveals that the Tl and the Ag positions are only slightly affected by the modulation, as might be expected from their uniform displacement parameters from the sub cell refinement. The same is true for one of the Te positions, Te1, while Te2 shows a very strong positional modulation in line with its highly anisotropic displacement parameters in the sub cell refinement. The shape of this modulation indicates that the structure is in fact a composite, and Te2 was therefore modelled using an alternative c axis given by c*(Te2) = c* × (1 – q), with q = –0.4403, thus yielding a c axis of 3.212 Å. Even in this composite model, the Te2 position must be described by quite a large modulation, and in the final model the atomic surface of Te2 was modelled using a saw tooth wave. This model was refined using the software package JANA2006,19 resulting in the formation of Te dimers and trimers along the c axis. According to this refinement, Te2 is fully occupied, but its cell is smaller than the base cell because of the smaller c axis. With the c axis ratio being 3.212/4.626 = 0.69, that corresponds to a 69% occupancy of Te2 with respect to the base cell, comparable to the above-discussed refined sub cell refinement yielding an occupancy of 71(1)% for Te2 (Table 2). The atomic modulation functions may be found in the Supporting Information. Refining the structure as a composite had a small impact on the lattice parameters of the base cell as well, resulting in a = 11.438(1) Å and c = 4.6256(5) Å, space group P63(00γ)s, and space group P6(00γ)s for the Te2 component. Final agreement parameters were R1(obs) = 6.7% for the main reflections, R1(obs) = 12.7% for the first order satellites, and R1(obs) = 36.7% for the second order satellites. It should be noted that the second order satellites are very weak,

x 1/3 0.15114(8) 0.41570(8) 0.42194(4) 0

y 2/3 0.27998(9) 0.06732(7) 0.31456(5) 0

z 0.1722(2) 0.1606(5) 0.1709(4) 0.17142(2) 0.19(1)

Ueq/Å2 0.0383(2) 0.0517(4) 0.0454(3) 0.0252(2) 0.0762(7)

occ. 1 0.96 0.95 1 1

Electronic structure calculations. The density functional theory (DFT) method was chosen to calculate the electronic structure via the WIEN2k package,20 with the full potential linearized augmented plane wave method (LAPW), adopting the PBE (Perdew, Burke and Ernzerhof) functional for the generalized gradient approximation (GGA).21 Four different models, all with fully occupied Ag sites, were chosen for the composite structure; all of them based on the sub cell refinement summarized in Tables 2 - 4. For model I, that cell was used directly, with only one Te atom in the chain, corresponding to the formula Tl2Ag12Te7 in space group P3 (no. 143). The shortest Te–Te contact within the chain then equals the original c axis of 4.62 Å. For model II, we tripled the c axis, filled it with four Te atoms in the chain, resulting in a formula of Tl3Ag18Te11 = Tl2Ag12Te7.33 with Te trimers alternating with isolated Te atoms along c, i.e. Te–Te contacts along c of 3.00 Å - 3.00 Å - 3.93 Å - 3.93 Å. For models III and IV, we doubled the c axis and filled it with three Te atoms in the chain per unit repeat, corresponding to the formula Tl4Ag24Te15 = Tl2Ag12Te7.5, allowing for a Te22– pair (d = 2.78 Å) alternating with an isolated Te atom in case of model III. In model IV, we imposed a formation of a linear Te atom chain with equidistant Te–Te distances of 2c/3 = 3.08 Å. These four model calculations were performed with 137, 43, 146 and 146 independent k points of the first Brillouin zone along the respective vectors of the reciprocal lattice, with the convergence criterion of the energy change being less than 0.0001 Ry. Physical property measurements. Differential scanning calorimetry (DSC) and thermogravimetry (TG) was used with the NETZSCH STA 409 PC Luxx instrument on a ground sample of approximately 30 mg of "Tl4Ag22Te14.5". The experiment was carried out under a constant argon flow with a heating rate of 20 K/min up to 823 K using sapphire as reference sample. Next, ground samples of nominal compositions of "Tl4Ag22Te14.5", "Tl4Ag22Te14.5", and "Tl4Ag22Te14.5" were hotpressed under a 5% hydrogen + 95% argon atmosphere with the Oxy-Gon FR–210–30T–ASA–160–EVC hot-press furnace system, using a hardened graphite die with an inner diameter of 12.7 mm. The densifying was performed at 623 K under 70 MPa for six hours, resulting in densities of 99% of the theoretical density, as determined via the Archimedes method. The thus prepared cylindrical pellets with height of approximately 1.5 mm were used to determine the thermal diffusivity under argon with the Anter FlashLine™ 3000. The thermal

ACS Paragon Plus Environment

Journal of the American Chemical Society 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

conductivity κ was calculated according to the formula κ = ρ CP D, with ρ being the pellet's density, and CP the specific heat, calculated via the Dulong-Petit law, which is appropriate for high temperature values.22 Finally, the electrical conductivity σ and the Seebeck coefficient α were measured under helium atmosphere, using a rectangular-shaped pellet with the dimensions 10 × 2 × 2 mm cut from the hot-pressed disk, utilizing the ULVAC-RIKO ZEM-3 system. Experimental errors were estimated to be ±5% for α, ±5% for σ, and ±5% for κ, and thusly ±10% for the figure-of-merit, zT.

RESULTS AND DISCUSSION Crystal structure. The sub cell of Tl2Ag12Te7+δ is depicted in Figure 1a. It consists of a three-dimensional framework structure of covalently bound AgTe4 tetrahedra, whose channels are filled by Tl atoms, which in turn are surrounded by six Te atoms in form of a trigonal prism at distances of 3.55 Å and 3.56 Å.

Figure 1a) Sub cell of Tl2Ag12Te7; b) ellipsoid representation of the linear Te2 chain on (0, 0, z).

The Ag–Te distances within the tetrahedra are with 2.78 Å 3.05 Å inconspicuous, and the edge condensation of the AgTe4 tetrahedra allows for multiple Ag–Ag contacts between 2.97 Å and 3.11 Å. Those Ag–Ag interactions commonly occur in silver tellurides, as discussed for BaAg2Te2,23 or most recently, Tl2NdAg3Te4.24 This structure is topologically equivalent with the Zr2Fe12P7 type,25 with the exception of the peculiar Te chain running along the c axis through the origin (Figure 1b). The most recently uncovered pnp switching26,27 material Tl2Ag12Se728 is also related to the Zr2Fe12P7 type by adopting a √3 × √3 × 1 super cell. In contrast to Zr2Fe12P7 and Tl2Ag12Se7, there is more than one atom in this chain on (0, 0, z) of the title compound per repeat unit, which we refined to 1.42(2), corresponding to δ = 0.42(2) in the formula of Tl2Ag12Te7+δ. Kolis et al. made a similar observation in case of K2Ag12Se7.11 (which however adopts a super cell in the a,b plane like Tl2Ag12Se7).15 Disordered chalcogen atom chains were also observed in K2Ag12Se714 and K2Ag12Te7,29 respectively, albeit without Se or Te excess. It remains to be seen whether or not these cases should be treated as composite structures. Our refinement as a composite structure showed that the linear Te2 chain in Tl2Ag12Te7+δ is best described as consisting of Te2 and Te3 fragments with two different interatomic distances, namely 2.93 Å within these fragments and 3.66 Å be-

Page 4 of 18

tween them (Figure 2). With that, the average repeat unit of a Te atom of the dimer is 1/2 (2.93 Å + 3.66 Å) = 3.295 Å, and of a Te atom of the trimer is 1/3 (2× 2.93 Å + 3.66 Å) = 3.173 Å. With c(Te2) = 3.212 Å, this results in a 1 : 2 ratio of dimers to trimers, because 1/3 × 3.295 Å + 2/3 × 3.173 Å = 3.214 Å. Electronic structure. The example of the related semiconducting selenide, Tl2Ag12Se7,28 showed the cations all to be in the expected +1 state, and the Se atoms to be 2–, according to (Tl+)2(Ag+)12(Se2–)7. In case of the telluride, the observed Te2 and linear Te3 fragments within the linear Te atom chain typically exists as Te22– and Te34–, isovalent with I2 and I3–, respectively. A Te46– unit occurs in Ag10Te4Br3,30 and a Te22– unit loosely connected to an isolated Te2– in Ag23Te12Cl and Ag23Te12Br.31 Previously we have found such Te22– dumbbells in BaCu6–xSTe6 and BaCu6–xSeTe6,32,33 and the Se analogue to Te34– in Ba2Ag4Se5,34 the latter being a hypervalent 22 valence-electron unit with 4-electron-3-center bonds like I3–. The Sb atom equivalent of that, Sb37–, is known from the Ca14AlSb11 type,35 adopted by one of the leading high temperature thermoelectrics, Yb14MnSb11.36–38 Related linear Sb atom chains occur in another high performance thermoelectric, namely in β-Zn4Sb3.39–41 These Sb atom chains consist of alternating Sb–Sb distances of 2.82 Å and 3.38 Å. With 1.4 Te atoms per formula unit being in this chain, a good approximation would a charge-balanced formula of (Tl+)2(Ag+)11.75(Te2–)6(Te22–)0.175(Te34–)0.35, i.e. the Te chain would be balanced by an Ag deficiency of 0.25 per formula unit, compared to a refined deficiency of 0.47(7). To analyze the impact of different Te atoms chains, we calculated the electronic structures of four different models of the formulae Tl2Ag12Te7 (1 Te atom per unit cell chain repeat of c = 4.62 Å), Tl2Ag12Te7.33 (1.33 Te atoms per repeat, forming alternating Te3 units and isolated Te atoms), and Tl2Ag12Te7.5 (1.5 Te atoms per repeat, alternating Te pairs and isolated Te atoms in model III as well as equidistant Te atom chain with interatomic distances of 3.08 Å in model IV). The respective Te atom chains are depicted at the top of Figure 3, along with the calculated band structures of the three-dimensional models. Therein, the contributions of the pz orbitals of the chain Te atoms, i.e. the p orbitals aligned along the chain direction, are emphasized via the fat band representation. In case of the Tl2Ag12Te7 model (model I, Figure 3a), the band structure is quite similar to the one of Tl2Ag12Se7; as no significant Te–Te interactions exist, the p states of Te are all in the valence band (along with the Ag d states), with pz having the largest dispersion along c*, i.e. from K to H and from A → Γ. This model is semiconducting with a calculated band of 0.4 eV.

ACS Paragon Plus Environment

Page 5 of 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Journal of the American Chemical Society

Figure 2. Section of the composite structure along the modulation (c) axis comprising Te dimers and trimers (shown with the neighboring Ag1 atoms).

Figure 3. Band structures of a) Tl2Ag12Te7 without Te–Te contacts, b) Tl2Ag12Te7.33 with Te trimers, c) Tl2Ag12Te7.5 with Te pairs; d) Tl2Ag12Te7.5 with an undistorted Te chain. Γ: (0, 0, 0); K: (1/3, 1/3, 0); H: 1/3, 1/3, 1/2); A: (0, 0, 1/2) in fractional coordinates of the reciprocal lattice.

The Tl2Ag12Te7.33 model (II) with an ordered Te atom chain is also semiconducting; with its Te34– unit, antibonding Te–Te pz states occur above the Fermi level in the conduction band (Figure 3b). In the formula Tl6Ag36Te22, three Te atoms are part of the Te34– anion, with the rest being isolated Te2–, which results in the balanced formula (Tl+)6(Ag+)36(Te2–)19(Te34–). Such Te–Te, or Se–Se and Sb–Sb, interactions have been shown to decrease the band gap;42,43 here the Te pz states associated with the bonding in the Te34– unit occur at the top of valence band, thereby decreasing the calculated band gap to 0.32 eV. Moreover, these Te pz states form a flat band at the top of the valence band from H → A (i.e., perpendicular to the chain direction), advantageous for a high Seebeck coefficient, and a steep band along the chain direction, i.e. from K → H and A → Γ, advantageous for high electrical conductivity along that direction. The Tl2Ag12Te7.5 model (III) with a differently ordered Te atom chain, namely alternating isolated Te atoms and Te22– units, exhibits several comparable features (compare Figure 3c with 3b). The semiconducting properties can be understood on the basis of the charge-balanced formula (Tl+)4(Ag+)24(Te2– )13(Te22–). Noteworthy is the same flat band at the top of the valence band from H → A, and the steep band from K → H and A → Γ. This indicates that the exact Te concentration is not vital for either the semiconducting properties or the coexistence of a flat and a steep band below the Fermi level, as long as a distorted Te atom chain is present. On the other hand, an undistorted Te atom chain as chosen in the model Tl2Ag12Te7.5 with equidistant Te–Te distances of

3.08 Å (model IV) would lead to the presence of Te pz states connecting the valence and the conduction band (Figure 3d), thereby destroying the band gap, as documented for such isolated chains as well.44,45 Therefore, such a scenario would always result in metallic properties, at least along the c axis. It should be noted that the metallic properties are not directly related to the Te atom concentration, but to the lack of a ordering within the chain. This is evident from a comparison of the two models c) and d) with the same Te amount, but different Te chains as above-described. Physical properties. The DSC scan for "Tl4Ag22Te14.5" is displayed in Figure 4, showing that this phase decomposes at 670 K. The next peak, occurring at 715 K, could be the melting point of tellurium, and the ones around 750 K the melting points of TlAgTe and TlAg9Te5.46 This results in the following reactions at these temperatures (with L = liquid): 1)

At 670 K: "Tl4Ag22Te14.5" → TlAgTe + TlAg9Te5 + Te

2)

At 715 K: Te(solid) → Te(liquid)

3)

At 750 K: TlAg9Te5 → Ag2Te + L and

TlAgTe → L'

The electrical conductivity data confirm the abovementioned hypothesis that this material with an ordered Te atom chain is indeed intrinsically semiconducting, regardless of the exact Te content of the samples (Figure 5). A sharp, in part exponential increase is evident for each case, with the high temperature electrical conductivity being σ = 57 Ω–1cm–1 around 525 K. Plotting ln σ vs. 1/T of the three data sets re-

ACS Paragon Plus Environment

Journal of the American Chemical Society 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

sulted in linear curves in each case (Figure S9). The so derived experimental band gaps were 0.5 eV – 0.6 eV. For comparison, the same procedure yielded an experimental gap of 0.8 eV in case of Tl2Ag12Se7.

Page 6 of 18

despite a higher electrical conductivity, a consequence of the additional flat band caused by the Te–Te interactions.

Figure 6. Seebeck coefficient.

Figure 4. Differential scanning calorimetry.

With regard to the thermoelectric performance point of view, the ultralow thermal conductivity of this material constitutes its best feature. As depicted in Figure 7, the total thermal conductivity values range from κ = 0.22 W m–1K–1 to 0.28 W m–1K–1 at all temperatures for all three samples, with the values being below 0.25 W m–1K–1 below 400 K. The total thermal conductivity as determined experimentally is composed of the lattice contribution, κPh, and the electronic contribution, κel, via κ = κel + κPh. κel can be determined via the WiedemannFranz-Lorenz law, κel = LσT with L = Lorenz number.47,48 Here, we used the Lorenz number for intrinsic semiconductors, L = 1.5 × 10–8 V2K–2. Even at the highest temperature and electrical conductivity, κel is below 0.05 W m–1K–1, and thus the minor contribution, compared to the lattice conductivity, which varies between 0.20 W m–1K–1 and 0.25 W m–1K–1. Higher yet still very low values were found in Ag10Te4Br3 (0.27 W m–1K–1 and 0.43 W m–1K–1), the structure of which also exhibits a complex Ag atom network and hypervalent Te46– units, but is no misfit structure.30

Figure 5. Electrical conductivity.

With respect to the thermoelectric performance, σ = 57 Ω– cm–1 constitutes a positive change from the low electrical conductivity of the selenide Tl2Ag12Se7 with σ = 2 Ω–1cm–1 at 586 K. This is in part caused by the decrease in band gap, resulting in a higher carrier concentration at elevated temperatures, and in part by the existence of the steep bands coming from the ordered Te chain, which in turn enhance mobility. The Seebeck coefficient is also typical for intrinsic semiconductors, slowly decreasing from +550 µV K–1 and +630 µV K–1 at 300 K to approximately +300 µV K–1 at 525 K. Again, the three samples investigated here are remarkably similar despite their nominal differences in Te content, with the high temperature data being equivalent within error. These values are higher than those of the corresponding selenide, 1

ACS Paragon Plus Environment

Figure 7. Thermal conductivity.

Page 7 of 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Journal of the American Chemical Society

These values are not only significantly smaller than those of the benchmark thermoelectrics Bi2Te3 with κPh = 1.5 W m–1K–1 49 and PbTe with κPh = 2.2 W m–1K–1 at room temperature,50 but also lower than those of the corresponding selenide, Tl2Ag12Se7, with κ values between 0.25 W m–1K–1 and 0.44 W m–1K–1 (comparable to the above-mentioned Ag10Te4Br3). Thus, replacing Se with Te leads to the rare, most advantageous constellation that both the Seebeck coefficient and the electrical conductivity increase, while the thermal conductivity decreases. Moreover, the thermal conductivity of this composite is also significantly lower than that of the abovementioned misfits (MS)1+x(TiS2)2 (with M = Sn, Pb, Bi),9 (κ > 0.65 W m–1K–1), which attained zTmax = 0.37 at 700 K, and on par with the likely poorly conducting single crystals of Bi2[AE]2Co2Oy single crystals (AE = Ca, Ca0.5Sr0.5, Sr), with κ between 0.2 W m–1K–1 and 0.28 W m–1K–1 at room temperature.11 This extraordinarily low thermal conductivity is likely a consequence of several factors, namely the heavy constituent elements, the local distortions stemming from the incommensurate composite nature of this structure, and the "dumbbell rattling" of the Te22– pairs and Te34– trimers. The effect of vibrating dumbbells is a striking illustration of the so-called "schwingende Elementargebilde", as also found in β-Zn4Sb3 with κPh = 1.3 W m–1K–1 at room temperature.51,52 Figure 8 shows the result of combining the abovementioned physical properties into the thermoelectric figureof-merit, zT = Tα2σ/κ. As a consequence of the exponentially increasing electrical conductivity with temperature, which outweighs the steadily decreasing Seebeck coefficient and the basically temperature-independent thermal conductivity, zT has a very strong temperature dependence, surpassing zT = 1 around 520 K. Such a high performance of a bulk material at these intermediate temperature is still rare, comparable with ntype Bi2Te3 (zTmax = 1.2 at 423 K)53 and p-type Tl9Bi0.98Te6 (zTmax = 1.1 at 500 K).54 On the other hand, higher zT values were found at higher temperatures in different antimonides and tellurides, including in Na0.95Pb20SbTe22 (zTmax = 1.7 at 650 K),55 β-Zn4Sb3 (1.3 at 670 K),56 Tl8.10Pb1.90Te6 (1.5 at 680 K),57 Tl0.02Pb0.98Te (1.5 at 773 K),58 Ba0.08La0.05Yb0.04Co4Sb12 (1.7 at 850 K),59 Na0.02Pb0.98Se0.15Te0.85 (1.8 at 850 K),60 and Yb14Mn0.4Al0.6Sb11 (1.3 at 1275 K).61

Figure 8. Thermoelectric figure-of-merit.

The striking difference - in addition to the title compound being the only composite material of that list - is that Tl2Ag12Te7+δ achieved its high zT value as an undoped semiconductor, i.e. its electrical performance is far from optimized.

CONCLUSION Tl2Ag12Te7+δ crystallizes in a variant of the Zr2Fe12P7 type, consisting of a composite structure of two parts. The first structure is a three-dimensional framework of the stoichiometry Tl2Ag12Te6, which includes the second structure, a linear Te atom chain, in its tunnels running along the c axis. This Te chain is comprised of Te22– pairs and Te34– trimers, the modulated sequence of which causing significant distortions of the surrounding three-dimensional Tl2Ag12Te6 framework. Overall this material is bestowed with an ultralow thermal conductivity, caused by its heavy elements, the incommensurate modulation, and possibly "dumbbell rattling". Compared to the corresponding selenide, which adopts a different variant of the Zr2Fe12P7 type, this material not only exhibits a lower thermal conductivity, but also both a higher Seebeck coefficient and a higher electrical conductivity, a consequence of special features in its band structure arising from the unique Te atom chain. Despite this material being an intrinsic semiconductor, its thermoelectric figure-of-merit surpasses unity. Future work will reveal how optimizing the electrical performance will further enhance the figure-of-merit. In parallel, we are investigating in how far Tl-free analogues, such as K2Ag12Se7+δ and K2Ag12Te7+δ exhibit comparable properties, noting that their previously reported structures are also based on disordered chalcogen atom chains.

ASSOCIATED CONTENT Supporting Information. One figure displaying experimental powder diagrams, six figures displaying the atomic modulation functions, one figure displaying the density of states of the four model calculations, one figure displaying the ln σ vs. 1/T curves, and one crystallographic information file. This material is available free of charge via the Internet at http://pubs.acs.org.

ACKNOWLEDGEMENTS Financial support from the Natural Sciences and Engineering Research Council of Canada in form of a Discovery Grant is appreciated.

Corresponding Author * Email: [email protected]

Present Addresses † Centre for Analysis and Synthesis, Department of Chemistry, Lund University, Box 124, SE-22100 Lund, Sweden

Author Contributions The manuscript was written through contributions of all authors. All authors have given approval to the final version of the manuscript.

ACS Paragon Plus Environment

Journal of the American Chemical Society

Page 8 of 18

J. WIEN2k, An Augmented Plane Wave + Local Orbitals

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

REFERENCES

Program for Calculating Crystal Properties; Schwarz, K., Ed.;

(1)

Techn. Universität Wien, Austria, 2001.

Sootsman, J. R.; Chung, D. Y.; Kanatzidis, M. G. Angew. Chemie - Int. Ed. 2009, 48, 8616–8639.

(21)

Perdew, J. P.; Burke, K.; Ernzerhof, M. Phys. Rev. Lett. 1996,

(2)

Snyder, G. J.; Toberer, E. S. Nat. Mater. 2008, 7, 105–114.

(3)

Kleinke, H. Chem. Mater. 2010, 22, 604–611.

(4)

Slack, G. A. In CRC Handbook of Thermoelectrics; Rowe, D.

S.; Tritt, T. M.; Mayolett, A.; Senawiratne, J.; Smith, C.; et al. J.

M., Ed.; CRC Press: Boca Raton, FL, 1995; pp 407–440.

Electron. Mater. 2013, 42, 1073–1084.

(22)

(5)

Slack, G. A. Mat. Res. Soc. Symp. Proc. 1997, 478, 47–54.

(6)

Wiegers, G. A.; Meetsma, A.; van Smaalen, S.; Haange, R. J.; de Boer, J. L. Solid State Commun. 1990, 75, 689–692.

(7)

(8)

77, 3865–3868.

(23)

(24)

Wiegers, G. A.; Meerschaut, A. J. Alloys Compd. 1992, 178,

Front. 2017, 4, 315–323. (25)

Ganglberger, E. Monatsh. Chem. 1968, 99, 557–568.

Lin, Q.; Smeller, M.; Heideman, C. L.; Zschack, P.; Koyano,

(26)

Osters, O.; Bawohl, M.; Bobet, J.-L.; Chevalier, B.; Decourt, R.;

(12)

Nilges, T. Solid State Sci. 2011, 13, 944–947. (27)

Wan, C.; Wang, Y.; Wang, N.; Koumoto, K. Materials (Basel). 2010, 3, 2606–2617.

(11)

(28)

Bhaskar, A.; Lin, Z. R.; Liu, C.-J. Mater. Res. Bull. 2013, 48, 4884–4888.

(29)

Pertlik, F. Monatsh. Chem. 2001, 132, 1509–1513.

Li, L.; Yan, X.-J.; Dong, S.-T.; Lv, Y.-Y.; Li, X.; Yao, S.-H.;

(30)

Nilges, T.; Lange, S.; Bawohl, M.; Deckwart, J. M.; Jansen, M.;

Chen, Y.-B.; Zhang, S.-T.; Zhou, J.; Lu, H.; et al. Appl. Phys.

Wiemhöfer, H.-D.; Decourt, R.; Chevalier, B.; Vannahme, J.;

Lett. 2017, 111, 033902/1-4.

Eckert, H.; et al. Nat. Mater. 2009, 8, 101–108.

Le Roy, J.; Moreau, J. M.; Brun, G.; Liautard, B. J. Alloys

(31)

M86-Exx078 APEX2 User Manual; Bruker AXS Inc.: Madison,

(32)

Wood, P. T.; Pennington, W. T.; Kolis, J. W. J. Am. Chem. Soc.

(33)

Oudah, M.; Kleinke, K. M.; Kleinke, H. Inorg. Chem. 2015, 54, 845–849.

Emirdag, M.; Schimek, G. L.; Pennington, W. T.; Kolis, J. W. J.

(34)

Assoud, A.; Xu, J.; Kleinke, H. Inorg. Chem. 2007, 46, 9906– 9911.

(16)

Sheldrick, G. M. Acta Crystallogr. A 2008, 64, 112–122.

(17)

Spek, A. L. Acta Crystallogr. D 2009, 65, 148–155.

(18)

Palatinus, L.; Chapuis, G. J. Appl. Crystallogr. 2007, 40, 786–

(35)

Cordier, G.; Schäfer, H.; Stelter, M. Z. Anorg. Allg. Chem. 1984, 519, 183–188.

(36)

790.

(20)

Mayasree, O.; Sankar, C. R.; Cui, Y.; Assoud, A.; Kleinke, H. Eur. J. Inorg. Chem. 2011, 4037–4042.

Solid State Chem. 1999, 144, 287–296.

(19)

Lange, S.; Bawohl, M.; Nilges, T. Inorg. Chem. 2008, 47, 2625– 2633.

1992, 114, 9233–9235. (15)

Shi, Y.; Assoud, A.; Sankar, C. R.; Kleinke, H. Chem. Mater. 2017, 29, 9565–9571.

WI, 2006. (14)

Guin, S. N.; Biswas, K. Phys. Chem. Chem. Phys. 2015, 17, 10316–10325.

Compd. 1992, 186, 249–254. (13)

Assoud, A.; Guo, Q.; Sankar, C. R.; Kleinke, H. Inorg. Chem.

351–368.

I. M.; Johnson, D. C. Chem. Mater. 2010, 22, 1002–1009.

(10)

Assoud, A.; Cui, Y.; Thomas, S.; Sutherland, B.; Kleinke, H. J. Solid State Chem. 2008, 181, 2024–2030.

M.; Anderson, M. D.; Kykyneshi, R.; Keszler, D. A.; Anderson,

(9)

Wang, H.; Porter, W. D.; Böttner, H.; König, J.; Chen, L.; Bai,

Brown, S. R.; Kauzlarich, S. M.; Gascoin, F.; Snyder, G. J. Chem. Mater. 2006, 18, 1873–1877.

Petrícek, V.; Dušek, M.; Palatinus, L. Zeitschrift fur

(37)

Bux, S. K.; Zevalkink, A.; Janka, O.; Uhl, D.; Kauzlarich, S.;

Kristallographie. 2014, pp 345–352.

Snyder, J. G.; Fleurial, J.-P. J. Mater. Chem. A 2014, 2, 215–

Blaha, P.; Schwarz, K.; Madsen, G. K. H.; Kvasnicka, D.; Luitz,

220.

ACS Paragon Plus Environment

Page 9 of 18 (38)

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Journal of the American Chemical Society Grebenkemper, J. H.; Hu, Y.; Barrett, D.; Gogna, P.; Huang, C.K.; Bux, S. K.; Kauzlarich, S. M. Chem. Mater. 2015, 27, 5791–

Keppens, V. Phys. Rev. Lett. 2007, 2007, 125501/1-125501/4. (53)

5798. (39)

Mater. 2013, 42, 1140–1145.

Caillat, T.; Fleurial, J.-P.; Borshchevsky, A. J. Phys. Chem.

(54)

Solids 1997, 58, 1119–1125. (40)

(41)

Guo, Q.; Chan, M.; Kuropatwa, B. A.; Kleinke, H. Chem. Mater. 2013, 25, 4097–4104.

Snyder, G. J.; Christensen, M.; Nishibori, E.; Caillat, T.;

(55)

Poudeu, P. F. P.; D’Angelo, J.; Downey, A. D.; Short, J. L.;

Iversen, B. B. Nat. Mater. 2004, 3, 458–463.

Hogan, T. P.; Kanatzidis, M. G. Angew. Chem. Int. Ed. 2006,

Mozharivskyj, Y.; Janssen, Y.; Harringa, J. L.; Kracher, A.;

45, 3835–3839.

Tsokol, A. O.; Miller, G. J. Chem. Mater. 2006, 18, 822–831. (42)

Wu, F.; Song, H.; Gao, F.; Shi, W.; Jia, J.; Hu, X. J. Electron.

(56)

Assoud, A.; Soheilnia, N.; Kleinke, H. Chem. Mater. 2004, 16, 2215–2221.

Caillat, T.; Fleurial, J.-P.; Borshchevsky, A. J. Phys. Chem. Solids 1997, 58, 1119–1125.

(57)

Guo, Q.; Assoud, A.; Kleinke, H. Adv. Energy Mater. 2014, 4,

(43)

Xu, J.; Kleinke, H. J. Comput. Chem. 2008, 29, 2134–2143.

(44)

Kleinke, H. J. Am. Chem. Soc. 2000, 122, 853–860.

(45)

Papoian, G. A.; Hoffmann, R. Angew. Chem. Int. Ed. 2000, 39,

Kurosaki, K.; Charoenphakdee, A.; Yamanaka, S.; Snyder, G. J.

2408–2448.

Science 2008, 321, 554–557.

(46)

Gawel, W.; Zaleska, E.; Terpilowski, J. J. Therm. Anal. 1987,

1400348/1-8. (58)

(59)

Heremans, J. P.; Jovovic, V.; Toberer, E. S.; Saramat, A.;

Shi, X.; Yang, J.; Salvador, J. R.; Chi, M.; Cho, J. Y.; Wang, H.;

32, 227–235.

Bai, S.; Yang, J.; Zhang, W.; Chen, L. J. Am. Chem. Soc. 2011,

(47)

Franz, R.; Wiedemann, G. Ann. Phys. 1853, 165, 497–531.

133, 7837–7846.

(48)

Lorenz, L. Ann. Phys. Chem. 1872, 223, 429–452.

(49)

da Silva, L. W.; Kaviany, M. Int. J. Heat Mass Transf. 2004, 47, 2417–2435.

(60)

Pei, Y.; Shi, X.; LaLonde, A.; Wang, H.; Chen, L.; Snyder, G. J. Nature 2011, 473, 66–69.

(61)

Toberer, E. S.; Cox, C. A.; Brown, S. R.; Ikeda, T.; May, A. F.;

(50)

Kanatzidis, M. G. Chem. Mater. 2010, 22, 648–659.

Kauzlarich, S. M.; Snyder, G. J. Adv. Funct. Mater. 2008, 18,

(51)

Bhattacharya, S.; Hermann, R. P.; Keppens, V.; Tritt, T. M.;

2795–2800.

Snyder, G. J. Phys. Rev. B 2006, 74, 134108/1-5. (52)

Schweika, W.; Hermann, R. P.; Prager, M.; Persson, J.;

ACS Paragon Plus Environment

Journal of the American Chemical Society 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Page 10 of 18

SYNOPSIS TOC.

ACS Paragon Plus Environment

10

Page 11 of 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Journal of the American Chemical Society

Figure 1. a) Sub cell of Tl2Ag12Te7; b) ellipsoid representation of the linear Te2 chain on (0, 0, z). 241x146mm (300 x 300 DPI)

ACS Paragon Plus Environment

Journal of the American Chemical Society 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Figure 2. Section of the composite structure along the modulation (c) axis comprising Te dimers and trimers (shown with the neighboring Ag1 atoms). 937x93mm (96 x 96 DPI)

ACS Paragon Plus Environment

Page 12 of 18

Page 13 of 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Journal of the American Chemical Society

Figure 3. Band structures of a) Tl2Ag12Te7 without Te–Te contacts, b) Tl2Ag12Te7.33 with Te trimers, c) Tl2Ag12Te7.5 with Te pairs; d) Tl2Ag12Te7.5 with an undistorted Te chain. Γ: (0, 0, 0); K: (1/3, 1/3, 0); H: 1/3, 1/3, 1/2); A: (0, 0, 1/2) in fractional coordinates of the recipro-cal lattice. 199x78mm (300 x 300 DPI)

ACS Paragon Plus Environment

Journal of the American Chemical Society 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Figure 4. Differential scanning calorimetry. 203x163mm (300 x 300 DPI)

ACS Paragon Plus Environment

Page 14 of 18

Page 15 of 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Journal of the American Chemical Society

Figure 5. Electrical conductivity. 203x161mm (300 x 300 DPI)

ACS Paragon Plus Environment

Journal of the American Chemical Society 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Figure 6. Seebeck coefficient. 203x164mm (300 x 300 DPI)

ACS Paragon Plus Environment

Page 16 of 18

Page 17 of 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Journal of the American Chemical Society

Figure 7. Thermal conductivity. 203x166mm (300 x 300 DPI)

ACS Paragon Plus Environment

Journal of the American Chemical Society 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Figure 8. Thermoelectric figure-of-merit. 203x167mm (300 x 300 DPI)

ACS Paragon Plus Environment

Page 18 of 18