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Controllable Growth of Centimeter-Sized 2D Perovskite Heterostructures for Highly Narrow Dual-Band Photodetectors Jun Wang, Junze Li, Shangui Lan, Chen Fang, Hongzhi Shen, Qihua Xiong, and Dehui Li ACS Nano, Just Accepted Manuscript • Publication Date (Web): 22 Apr 2019 Downloaded from http://pubs.acs.org on April 22, 2019

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Controllable Growth of Centimeter-Sized 2D Perovskite Heterostructures for Highly Narrow Dual-Band Photodetectors Jun Wang#,†, Junze Li#,†, Shangui Lan†, Chen Fang†, Hongzhi Shen†, Qihua Xiong‡,§ and Dehui Li*,†, †School

of Optical and Electronic Information, Huazhong University of Science and

Technology, Wuhan, 430074, China ‡Division

of Physics and Applied Physics, School of Physical and Mathematical Sciences,

Nanyang Technological University, Singapore 637371, Singapore. §NOVITAS,

Nanoelectronics Centre of Excellence, School of Electrical and Electronic

Engineering, Nanyang Technological University, Singapore 639798, Singapore. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China # Those

authors contribute to this work equally.

*Correspondence to: Email: [email protected].

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ABSTRACT Heterostructures consisting of 2D layered perovskites are expected to exhibit interesting physical phenomena inaccessible to the single 2D perovskites and can greatly extend their functionalities for electronic and optoelectronic applications. Herein, we develop a solution method to synthesize (C4H9NH3)2PbI4/(C4H9NH3)2(CH3NH3)Pb2I7 heterostructures with centimeter size, high phase purity, controllable thickness and junction depth, high crystalline quality and great stability for highly narrow dual-band photodetectors. On the basis of the different lattice constant, solubility and growth rate between (C4H9NH3)2PbI4 and (C4H9NH3)2(CH3NH3)Pb2I7, the designed synthetic method allows to first grow the (C4H9NH3)2PbI4 at the water-air interface and subsequently the (C4H9NH3)2(CH3NH3)Pb2I7 layer is formed via diffusion process. Such growth process provides an efficient way for us to readily obtain heterostructures with various thickness and junction depth by controlling the concentration, reaction temperature and time. The formation of heterostructures has been verified by X-ray diffraction, cross-section photoluminescence and reflection spectroscopy with the estimated junction width below 100 nm. Photodetectors based on such heterostructures exhibit low dark current ( 10C < A), high on-off current ratio ( 103), and highly narrow dualband spectral response with a full-width at half-maximum (FWHM) of 20 nm at 540 nm and 34 nm at 610 nm. The high performance can be attributed to the high crystalline quality of the heterostructures and the extremely large resistance in the out-of-plane direction. The synthetic strategy is versatile for other 2D perovskites and the narrow dual-band spectral response with all FWHMs 2 2D perovskite can be further synthesized on the resultant heterostructures and how the thickness of n=2 changes with the mass ratio. Surprisingly, XRD patterns and PL spectra show the absence of n>2 2D perovskites and no substantial thickness difference of the n=2 layer have been observed when the mass ratio of BAI to MAI changes from 1:4 to 1:64 (Figure 2b and c). For the ratio of 2:3 case, the thickness change might be due to the change of the maintaining time (See below). The similar thickness of the n=2 layer in the resultant heterostructures under different mass ratio of BAI/MAI reveals that the reaction kinetics for the growth of n=2 might be diffusion-controlled. The absence of n>2 2D perovskites for different BAI to MAI mass ratio proves our hypothesis that the solubility of n>2 2D perovskites is rather high that the aqueous solution has not reached the saturation condition for n>2 2D perovskites to precipitate (Figure 1c).

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(BA)2(MA)Pb2I7 layer tn=2 is evaluated from the absorption spectra according to the BeerLambert law.

In order to further prove that the diffusion process controls the growth of n=2 layer we hypothesized, with a fixed BAI to MAI mass ratio of 2:3, we have intentionally tuned the reaction time while maintaining the temperature at 75 ºC when the n=2 2D perovskite starts to grow . As shown in Figure 3a, it is expected that the thickness of n=2 layer (along the out-ofplane direction) would increase with prolonging the maintaining time at 75 ºC since MA cations would diffuse further deep into the n=1 plates with time provided that the process is diffusioncontrolled. We have carried out a series of experiments with different maintaining time (at 75 ºC, a constant MAI concentration of 1 mol/L and a fixed BAI to MAI mass ratio of 2:3) to investigate how the thickness evolves with time through X-ray diffraction, room-temperature absorption spectra and PL spectra (Figure 3b-d). XRD patterns of the as-grown n=1/n=2 show that only diffraction peaks from n=1 and n=2 2D perovskites are present for the resultant heterosturcutres with a longer maintaining time, suggesting the absence of n>2 perovskites (Figure 3b). Nevertheless, the intensity of diffraction peaks from n=2 increases with the increase of the maintaining time, which implies that the thickness of n=2 layer increases along with the maintaining time. As the maintaining time increases, the intensity of absorption edge locating at 520 nm (corresponding to absorption edge of n=1) gradually decreases while the intensity of the absorption edge at 590 nm (corresponding to absorption edge of n=2) continuously increases, which indicates the thickness of n=2 layer continuously increases with the maintaining time.The thickness of n=2 finally reaches a constant value according to the Beer-Lambert law (Figure 3c, e). The maximum thickness of n=2 layer is estimated to be around 1.5 T

which is probably limited by the finite diffusion length at a certain temperature and a

certain concentration of MAI. The evolution of the room-temperature PL spectra with the maintaining time exhibits the same trend as the XRD patterns and absorption spectra (Figure 3d). The intensity of emission 13 ACS Paragon Plus Environment

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peak at 520 nm continuously decreases with prolonging the maintaining time at 75 ºC while the intensity of peak at 590 nm continuously increases, indicating the gradual increase of the thickness of the n=2 layer. To clearly visualize the evolution of the emission intensity with the maintaining time as well as the thickness of n=2 layer , we have fitted the PL spectra by using the Voigt function and plotted the free emission internsity ratio of n=2 to n=1 versus the maintainting time and the thickness of n=2 layer (Figure S4 and S5). From the fitting results, all PL spectra contains two main peaks and two low-energy tails. While the main peaks can be ascribed to the free exciton emission of n=1 and n=2 layer, the two low-energy tails can be assigned to the self-trapped exciton emission of n=1 and n=2 respectively, according to previous reports.51 The intensity ratio of free excition emission from n=2 to n=1 against the maintainting time and the thickness of n=2 layer clearly shows that the intensity of the free exciton emission of n=2 layer increases with increasing the thickness of n=2 layer (Figure S5). Furthermore, we have found that the measured thickness of the as-grown heterostructural plates maintains around 80 T

(Figure 3e) no matter what the lateral size of the plates is, how

we prolong the maintaining time and how we tune the mass ratio of BAI to MAI. This unambiguously indicates that the growth of n=2 layer is indeed after the formation of the n=1 plates and the growth is a diffusion-controlled process, as we hypothesized in Figure 1b and 1c. To sum up, XRD diffraction patterns, room-temperature absorption and PL spectra all point to that n=2 layer grows thicker and no additional n>2 perovskite compositions have been formed with increasing the maintaining time, which eventually confirms that the reaction kinetics of n=2 layer is a diffusion-controlled process. In addition, the total thickness of the heterostructures can be readily tuned by intentionally varying the MAI concentration of the reaction solution but with a fixed BAI to MAI mass ratio of 2:3 (Figure 3a). As shown in Figure 3f, the total thickness nearly linearly increases with the MAI concentration of the reaction solution. We further examined how the change of MAI concentration affects the growth process by reducing the MAI concentration to 0.25 mol/L (but 14 ACS Paragon Plus Environment

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responsivity for the narrow dual-band photodetectors of (BA)2PbI4/(BA)2(MA)Pb2I7 heterostructures with the maintaining time of 30 min and 240 min (corresponding to a (BA)2(MA)Pb2I7 layer thickness of 300 nm and 1.1 T respectively) under a bias voltage of 3 V.

As a demonstration, electronic devices based on those centimeter-size heterostructures have been fabricated to investigate their optoelectronic properties. Figure 4a displays the schematic illustration of a two-probe vertical electronic device for the n=1/n=2 heterostructure. Taking advantage of the centimeter size of the heterostructures, we can directly transfer the as-grown samples synthesized under a different maintaining time to an indium-tin-oxide (ITO) substrate (also acting as bottom electrodes) and define the 10-nm Cr/100-nm Au top electrodes by shadow mask and e-beam evaporation with the device area in our case around 100 µm2. In this device architecture, since the n=1 layer is sandwiched by n=2 layers, the device is actually consisted by two back-to-back heterostructures, which can efficiently suppress the dark current and improve the on-off ratio. Based on previous studies, the band alignment diagram of the our heterostructures can be drawn, which belongs to type-II structure (Figure 4b).29 This band alignment also favors the photogenerated carrier separation and thus the detection efficiency.52 Figure 4c exhibits the output characteristics of the device in dark and under different monochromatic light illuminations for the heterostructural plates with a total thickness of ~80 T

(the maintaining time is 240 min, corresponding to a thickness of ~1.1 T

for n=2 layer).

Due to the high crystalline quality of our plates (a very low intrinsic carrier concentration) and the device structure we adopted, an extremely small dark current of ~10-12 A was observed, which is on the same order of n=3 photodetectors,53 and even two orders of magnitude lower than that of graphene/n=1 photodetectors.54 The corresponding dark current density is around 10-6 Acm-2, three orders of magnitude lower than that of graphene/n=1 photodetectors.54 Under illumination, the notable photocurrent appears and varies with incident light wavelength. The asymmetric current-voltage curve indicates that the contact is not optimal. Unlike the 3D perovskites, there is no noticable hysteresis in the output characteristics probably due to the 16 ACS Paragon Plus Environment

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presence of the insulating organic layers, which prohibits the ion migration in the out-of-plane direction.55 Interestingly, the spectral response indicates that there are two narrow spectral response bands with the peaks locating at around 540 nm and 610 nm, which shows around 20 nm redshifts for both peaks compared with the absorption edge of the heterostructures (Figure 4d). This implies that the charge collection narrow mechanism (or surface recombination) together with the self-trapped excitons would be the possible reason for the narrow dual-band spectral response (Figure S6).51, 56-58 This is surprising since the exciton binding energy in 2D perovskites is on the order of hundreds of meV and thus we don’t expect the excitons can be ionized by the thermal excitation at room temperature. Nevertheless, the exciton ionization is further supported by the PL intensity, which is greatly reduced in the heterostructures compared with that of n=1 and n=2 (Figure S7).32 One possible reason for the exciton ionization here is the built-in field formed within the heterostructures, which was supprted by a self-driven photodetector without applying voltage (Figure S8).59,60 Under illumination, photogenerated electron-hole pairs are readily separated by the built-in potential formed at the n=1/n=2 interface, leading to the self-driven photocurrent. To exclude the influence from the variation of light intensity at different wavelengths, we have adopted responsivity R (defined as the ratio of the photocurrent to the incident light power) rather than photocurrent in Figure 4d. FWHMs are 20 nm for green band (540 nm) and 35 nm for red band (610 nm), both of which are narrower than the commercial fluorescence band-pass filters (40-90 nm).60,61 The corresponding maximum responsivity (external quantum efficiency, denoted as EQE) for those two response bands are 0.69 AW-1 (158%) and 0.65 AW-1 (132%) for green band (540 nm) and red band (610 nm), both of which are almost three orders of magnitude larger than that of 3D perovskite narrowband photodetectors.54 It should be noted that the photodetectors based on our heterostructures are narrow dual-band, which can be achieved by utilizing the self-trapped states with a weak absorption. Therefore, it is expected

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that a lower responsivity should be observed in our devices compared with that of broadband 2D perovskite photodetectors.63-65 Figure 4e shows the optical switch characteristics of the device at different negative voltages under a 540-nm light illumination. The magnitude of the photocurrent continuously increases with the increase of the magnitude of the applied voltage, consistent with the output characteristics in Figure 4c. The on and off current maintains almost the same for all measured cycles suggesting the excellent stability and reversibility of our devices. The extracted on-off ratio is around 103 under the applied voltage of -3 V, which is also larger than the reported value.66,67The response speed, characterized by rise time and decay time, is an important parameter for the photodetectors and optical switches. The rise time and decay time of the photodetector are

Y

as the time taken for the photocurrent increasing from 10% to 90%

of the peak value, and vice versa. The measured rise time and decay time of our devices are 150 ms and 170 ms illuminated by a 540-nm light under the applied voltage of 3 V (Figure 4f), which are slower than the reported 3D perovskite based narrow band photodetectors. This slow response speed might be due to the thick plates (80 T > and smaller electric field we applied (0.03 /?T >. Furthermore, we have fabricated the photodetectors based on the heterostructures with a thinner n=2 layer of around 300 nm by controlling the maintaining time at 75 ºC to be 30 minutes to examine how the thickness of the n=2 layer affects the performance of the narrow dual-band photodetections. Interestingly, the output characteristics for the thinner n=2 layer exhibit a notable rectifying behavior with forward-to-reverse bias current ratios of 2×103 and both the dark current and photocurrent dramatically increases compared with that of the device with the thicker n=2 layer devices (Figure S9a). Under illumination with different monochromatic light, significant photocurrent on the order of 100 nA has been observed under a forward bias of 3 V. The optical switch characteristic also indicates the excellent stability and 18 ACS Paragon Plus Environment

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reversibility similar to the device with the thicker n=2 layer but with a much larger dark current (Figure S9b). We have measured several devices and all exhibit the similar behavior. The diode behavior and enhanced dark current and photocurrent might originate from the depletion field of the thinner n=2 layer. The low carrier concentration of our heterostructures would lead to a large depletion length, which might exceed the thickness of the thinner n=2 layer and thus affect the contact barrier. Due to the different contact materials for the bottom electrode (ITO) and top electrode (Au), the depletion field might have different degree of effect on the contact barrier, which gives rise to the diode behavior and enhanced current. For the devices with a thicker n=2 layer, the n=2 layer has not been completely depleted and thus no such effect has been observed. Nevertheless, more investigations are required to clarify the mechanism, which is out of scope of this manuscript. Importantly, narrow dual-band spectral response with central peaks locating at 540 nm and 610 nm has also been observed for the thinner n=2 layer devices with FWHMs of 10 nm at the green band and 38 nm at the red band (Figure 4g). The estimated responsivity (EQE) for those two bands are 11.5 AW-1 (2640%) and 22.7 AW-1 (4614%), which are much larger than the devices with a thicker n=2 layer. Interestingly, compared with the thicker n=2 layer device, the photoresponse peak related to the absorption band of the n=2 layer shows a slight blueshift while the responsivity at the valley between the 540 nm and 610 nm are much higher suggesting that the thickness of n=2 layer is too thin (150 nm) to prevent the photogenerated carriers close to surface from being collected by electrodes, similar to the 3D perovskite narrowband photodetectors.37,56 Nevertheless, there is no such change for the photoresponse peak associated with n=1 layer for the thin n=2 layer device since in both devices the n=1 layer are sufficiently thick. This thickness dependence of spectral response further strengthens that charge collection narrowing mechanism (or surface recombination) would be very likely to be the primary reason for us to observe the narrow dual-band spectral response in our heterostructural devices.56

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and room-temperature PL spectra confirm the formation of the (BA)2PbBr4/(BA)2(MA)Pb2Br7 (Figure 5a and c) and (PEA)2PbI4/(PEA)2(MA)Pb2I7 (Figure 5b and d). For comparison, we also display the XRD patterns and PL spectra of (BA)2PbBr4 and (BA)2(MA)Pb2Br7 in Figure 5a and c, and (PEA)2PbI4 and (PEA)2(MA)Pb2I7 in Figure 5c and d, all of which are synthesized by solution method.44 The output characteristics of the photodetectors based on (BA)2PbBr4/(BA)2(MA)Pb2Br7 and (PEA)2PbI4/(PEA)2(MA)Pb2I7 heterostructures (Figure S10) show the same trend as that of (BA)2PbI4/(BA)2(MA)Pb2I7 devices. For the (BA)2PbBr4/(BA)2(MA)Pb2Br7 devices, due to the thinner (BA)2(MA)Pb2Br7 layer (supportted by the very weak emission peak of (BA)2(MA)Pb2Br7 compared with that of (BA)2PbBr4 in Figure 5c), the output curves both in dark and under monochromatic light illumination show a large rectifying behavior while the linear output curves have been observed for (PEA)2PbI4/(PEA)2(MA)Pb2I7 devices because of the thicker (PEA)2(MA)Pb2I7 layer (supported by the strong emission of (PEA)2(MA)Pb2I7 compared with that of (PEA)2PbI4 in Figure 5d). The excellent stability and reversibility of those devices have been identified by the optical switch characteristics in Figure 5e. For both types of devices the narrow dual-band spectral response is present, ranging from blue to red wavelength range with all FWHMs smaller than 30 nm and fairly good EQE of >10% (Figure 5f). By properly selecting the chemical compositions of 2D perovskite heterostructures, we expect the narrow dual-band photodetectors can be tuned continuously from the ultraviolent to near infrared wavelength range. The layered characteristic of the 2D perovskites in nature allows the heterostructures to be seamlessly grown along the out-of-plane direction while the lattice mismatch between n=1 and n=2 2D perovskites within the in-plane direction prohibits the growth of the mixed n=1 and n=2 perovskites inside the structures. Those two factors together grant that the formation of n=1 perovskite is sandwiched by n=2 heterostructural plates. This diffusion-controlled growth process together with n-value dependent solubility also ensures the phase purity and high 21 ACS Paragon Plus Environment

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crystalline quality of the resultant heterostructures, resulting in the excellent performance of the highly narrow dual-band photodetectors in the entire visible wavelength range. The excellent stability of 2D perovskites against the moisture, oxygen and light illumination has inherently equipped within our synthesized heterostructures. After being stored under ambient condition for 180 days, XRD patterns and PL spectra retain their original peaks without any impurity peaks, suggesting the excellent stability of our heterostructures (Figure S11). Furthermore, the responsivity of the heterostructural devices decreases only about 10% after one month and 35% after six months for the peak due to n=2. The excellent performance together with good stability of our heterostructures makes our narrow dual-band photodetectors more attractive for multicolor imaging sensing in a variety of applications. CONCLUSIONS In summary, we have developed a solution method to controllably synthesize centimeter-size 2D perovskite heterostructures with tunable thickness and junction depth and realized highly narrow dual-band photodetections with excellent performance based on those as-grown heterostructures. The layered nature of 2D perovskites and diffusion-controlled growth process allow us to achieve seamless growth of the heterostructures with high crystalline quality and high phase purity, which enable us to achieve narrow dual-band photodetections by the charge collection narrowing mechanism with excellent performance. Our studies not only offer an avenue to controllably synthesize high quality, pure phase 2D perovskite based heterostructures for fundamental investigations and potential electronic and optoelectronic applications, but also provide an alternative approach to realize filter-free ultraviolet, visible or infrared narrow dualband photodetections for a variety of applications related to multicolor imaging technology. METHODS Materials. PbO (99.99%), hydroiodic acid (57 wt.% in H2O, distilled, stabilized, 99.95%), hydrobromic acid (48 wt.% in H2O, distilled, stabilized, 99.95%), hypophosphorous acid (H3PO2, 50 wt.% in H2O) and methylamine CH3NH2 (40 wt.% in H2O) were purchased from 22 ACS Paragon Plus Environment

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Sigma-Aldrich and used as received. The amines n-butylamine (n-CH3(CH2)3NH3, 99%) and phenethylamine (C6H5CH2CH2NH2, 99%) were purchased from DiBai Chemistry Company (Shanghai, China). Synthesis of MAI/MABr powder. The precursor MAI/MABr powder was synthesized by adding methylamine into HI/HBr aqueous solution with a molar ratio of 1:1 drop by drop. The resultant solution was stirred for 2 hours at 0 ºC. The solution was then heated to 60 ºC to evaporate the solvent and the remaining solid was washed by cold diethyl ether three times followed by drying at 70 ºC for 12 hrs. Synthesis of BAI/BABr/PEAI solution. The synthetic procedure for BAI/BABr/PEAI solution was the same as the synthesis of MAI/MABr powder except that the methylamine was replaced by n-butylamine (phenethylamine) and the stirring time was extended to 4 hours. In addition, the resultant reaction solution was directly used without evaporation. Synthesis of centimeter-size 2D perovskite heterostructure plates. 0.5 g PbO powder was dissolved in a mixture of 3 ml HI and 0.5 ml H3PO2 by heating to 140 ºC under constant magnetic stirring. Then 1.75 mol/L BAI solution was added into the resultant solution and slowly cooled down to 75

while 0.2 g MAI powder was successively injected into the

solution for the synthesis of (BA)2(MA)PbI4/(BA)2(MA)Pb2I7 plates. Afterwards, the stirring was stopped, and the solution was maintained at 75 ºC for different time, and naturally cooled down to room temperature within about 30 minutes. To tune the total thickness of the heterostructures, the MAI concentration of the reaction solution changes from 0.25 mol/L to 1 mol/L but with a fixed BAI to MAI ratio of 2:3 while maintaining other conditions the same. For the synthesis of (BA)2PbBr4/(BA)2(MA)Pb2Br7 and (PEA)2PbI4/(PEA)2(MA)Pb2I7 plates, the exact same procedures were adopted except replacing the HI solution (BAI solution) with HBr solution (PEAI solution). The synthesis of heterostructures was carried out in air with a relative humidity of 50%. 23 ACS Paragon Plus Environment

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Material characterizations. Powder X-ray diffraction measurements were recorded using Bruker D2 PHASER (Cu G[ \P&. E$ 1 nm, Nickel filter, 25 kV, 40 mA). Optical microscopy images were collected by the Olympus BX53M microscope. The scanning electron microscopy (SEM) images were acquired on a JEOL 7001F field emission scanning electron microscope. The thickness of the heterostructures was measured on a stylus profiler (Dektak XT, Bruker). The absorption spectra were recorded on an ultraviolet-Vis spectrophotometer (UV-1750, SHIMADZU). The photoluminescence measurements were performed in backscattering Y

using a Horiba HR550 system equipped with a 600 g/mm grating excited by a

473 nm solid-state laser with a power of 1 T#. The objective used is 50X and the diameter of beam spot is around 2

m. The reflection measurement was carried out in the same setup by

using a 100 W halogen tungsten lamp as light source. All measurements were carried out in ambient condition with a relative humidity of 50%. Photoconductivity measurements. 10-nm Cr/100-nm Au electrodes were defined by a shadow mask and deposited by electron beam evaporation. A quartz tungsten halogen lamp (250 W) was used as the light source and then dispersed by a monochromator (Horiba JY HR320). The monochromatic light beam output was used to illuminate the devices mounted on a chip carrier. The incident light intensity was recorded by a pyroelectric detector (Gentec, model APM (D)). The photocurrent was collected by a lock-in amplifier (Stanford SR830) coupled with a mechanical chopper while the response speed was acquired on a digital oscilloscope (Tektronix MDO3032). All measurements were performed at ambient atmosphere with a relative humidity of 50%. ACKNOWLEDGMENTS D. L. acknowledges the support from NSFC (61674060) and the Fundamental Research Funds for the Central Universities, HUST (2017KFYXJJ030, 2017KFXKJC002, 2017KFXKJC003, 2018KFYXKJC016). W. J. acknowledges the support from China Postdoctoral Science Foundation (2017M612437). We thank the Analytical and Testing Center of Huazhong 24 ACS Paragon Plus Environment

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University of Science and Technology for the support in XRD measurement and thank the Center of Micro-Fabrication of WNLO for the support in device fabrication. Associated Content Supporting Information Supporting Information Available: Optical image of of centimeter-size heterostructure plates; fitting results of PL spectra and the free exciton emission intensity ratio of n=2 to n=1 versus the maintaining time; schematic illustration of multiple reflection; operating mechanism of the dual narrow-band photodetectors; the exciton ionization; self-driven photodetectors under light illumination; output characteristics of Br- and PEA- based heterostructural photodetectors; stability of heterostructures. The Supporting Information is available free of charge on the ACS Publications website. AUTHOR INFORMATION Corresponding Author * E-mail: [email protected] Conflict of Interest The authors declare no conflict of interest.

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