Article pubs.acs.org/journal/apchd5
All-Dielectric Color Filters Using SiGe-Based Mie Resonator Arrays Thomas Wood,*,†,‡ Meher Naffouti,†,§,∥ Johann Berthelot,⊥ Thomas David,† Jean-Benoît Claude,† Léo Métayer,† Anne Delobbe,# Luc Favre,† Antoine Ronda,† Isabelle Berbezier,† Nicolas Bonod,⊥ and Marco Abbarchi*,† †
CNRS, Aix-Marseille Université, Centrale Marseille, IM2NP, UMR 7334, Campus de St. Jérôme, 13397 Marseille, France Laboratoire de Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, Monastir 5019, Tunisia ⊥ Aix-Marseille Univ, CNRS, Centrale Marseille, Institut Fresnel, Marseille, France # Orsay Physics 13710 Fuveau, France
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S Supporting Information *
ABSTRACT: Dielectric Mie resonators have attracted a great deal of attention over the past few years thanks to their remarkable capabilities in manipulating light propagation at the nanoscale. However, the practical implementation of technological products is still elusive. One of the important limits is the absence of a high-performing material and a fabrication method that can be easily integrated into modern microelectronic devices at affordable costs. Here, we provide theoretical and experimental evidence of an alternative semiconductor material, SiGe alloys, for dielectric Mie resonator applications. As a material compatible with the processing requirements of the semiconductor industry, it possesses comparable optical properties to its conventional Si-based counterpart at visible frequencies in spite of its higher optical losses. These dielectric resonant particles can be obtained over very large surfaces on arbitrary silica substrates via spontaneous solid state dewetting of ultrathin (
