Carbon Nanotube Film Gate in Vacuum Electronic Devices - Nano

Subscriber access provided by Washington University | Libraries

Communication

Carbon nanotube film gate in vacuum electronic devices Peng Liu, Duanliang Zhou, Chunhai Zhang, Xinhe Yang, Liang Liu, Lina Zhang, Kaili Jiang, Qunqing Li, and Shoushan Fan Nano Lett., Just Accepted Manuscript • DOI: 10.1021/acs.nanolett.8b00913 • Publication Date (Web): 05 Jul 2018 Downloaded from http://pubs.acs.org on July 5, 2018

Just Accepted “Just Accepted” manuscripts have been peer-reviewed and accepted for publication. They are posted online prior to technical editing, formatting for publication and author proofing. The American Chemical Society provides “Just Accepted” as a service to the research community to expedite the dissemination of scientific material as soon as possible after acceptance. “Just Accepted” manuscripts appear in full in PDF format accompanied by an HTML abstract. “Just Accepted” manuscripts have been fully peer reviewed, but should not be considered the official version of record. They are citable by the Digital Object Identifier (DOI®). “Just Accepted” is an optional service offered to authors. Therefore, the “Just Accepted” Web site may not include all articles that will be published in the journal. After a manuscript is technically edited and formatted, it will be removed from the “Just Accepted” Web site and published as an ASAP article. Note that technical editing may introduce minor changes to the manuscript text and/or graphics which could affect content, and all legal disclaimers and ethical guidelines that apply to the journal pertain. ACS cannot be held responsible for errors or consequences arising from the use of information contained in these “Just Accepted” manuscripts.

is published by the American Chemical Society. 1155 Sixteenth Street N.W., Washington, DC 20036 Published by American Chemical Society. Copyright © American Chemical Society. However, no copyright claim is made to original U.S. Government works, or works produced by employees of any Commonwealth realm Crown government in the course of their duties.

Page 1 of 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Nano Letters

Carbon nanotube film gate in vacuum electronic devices Peng Liu*, Duanliang Zhou, Chunhai Zhang, Xinhe Yang, Liang Liu, Lina Zhang, Kaili Jiang, Qunqing Li, Shoushan Fan State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics & Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China.

Abstract: A super-aligned carbon nanotube (SACNT) film can act as an ideal gate electrode in vacuum electronics due to its low secondary electron emission, high electron transparency, ultrasmall thickness, highly uniform electric field, high melting point and high mechanical strength. We used a SACNT film as the gate electrode in a thermionic emission electron tube and field emission display prototype. The SACNT film gate in a thermionic emission electron tube shows a larger amplification factor. A triode tube with the SACNT film gate is used in an audio amplification circuit. The SACNT film gate electrode in field emission devices shows better field uniformity. The field emission display prototype is demonstrated to dynamically display Chinese characters.

Keywords: carbon nanotube film, vacuum electronics, gate electrode, thermionic emission, field emission

*

Corresponding author, [email protected], +86-10-62794280 1 / 18

ACS Paragon Plus Environment

Nano Letters 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Carbon nanotube (CNT) films have been demonstrated to be optically transparent and can be used as the transparent conductive electrode in touch panels or display devices1-3. The transparency is attributed to the low spatial ratio of CNTs in the film and their ultrasmall diameter. The unique nature of CNT films has also enabled many other properties and applications, such as the grid and support for other materials in transmission electron microscopy (TEM)4. In fact, the porous nature not only allows light to pass through but also enables transparency for many other material particles. Due to the ultrasmall dimensions of electrons, CNT films are also expected to show high electron transparency, which is a very important requirement for the gate electrode in vacuum electronics5. The goal of the gate electrode is to control electron movement while capturing the fewest electrons, that is, high electron transparency. Traditional gate electrodes are usually made of metal wires6-7. Because attaining a metal wire with a diameter of approximately a micron is difficult, the electric field uniformity must be sacrificed by enlarging the inter-wire distance to improve the electron transparency. The two types of gates in vacuum electronics are the thermionic emission gate, with a large emission current and small electric field, and the field emission gate, with a small emission current and large electric field. Both kinds of applications require the gate materials to be strong enough to endure electron impingements, and the melting point should also be sufficiently high. Furthermore, the gate materials should be good conductors to avoid charge accumulation. The parasitic electron emission should also be low enough to lower the noise of the devices. In this paper, we demonstrated a super-aligned CNT (SACNT) 2 / 18


Page 2 of 18

Page 3 of 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Nano Letters

film that can satisfy most of the above requirements and is a good candidate for a gate in vacuum electronics. We then applied the SACNT film as the gate electrode in an audio amplifier vacuum tube and a field emission display prototype.

Figure 1. Super-aligned carbon nanotube (SACNT) film and its physical characterization. a) As-prepared SACNT film on a metal frame, scale bar 10 mm; the inset is a scanning electron microscope (SEM) image; b) SACNT film after densification by ethanol atomization, scale bar 10 mm; the inset is an SEM image; c) UV-Vis-NIR spectra and d) mechanical properties of the CNT film before and after 3 / 18


Nano Letters 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

atomization; e) the electron transparency of the SACNT film measured in an electrostatic focus electron gun system; and f) the secondary electron emission coefficient of the SACNT film.

The SACNT film is easy to mass produce2-3, 8. Figure 1 a) shows the SACNT film placed on a metal frame, which consists of a cross-stacked two-layer film. Figure 1 b) shows the SACNT film after densification via ethanol atomization using an air brush9. The insets of Figure 1 a) and b) are the corresponding scanning electron microscope (SEM) images of the SACNT film before and after densification, respectively. The optical transparency and mechanical properties are both obviously improved after densification, as shown in Figure 1 c) and d). The improved transparency is attributed to the pores being enlarged due to shrinkage of the CNT film, as shown in the SEM image in the inset of Figure 1 b). The mechanical property enhancement is attributed to the adhesion between the two layers and the formation of bundles between each layer, which can also be observed in the SEM image in the inset of Figure 1 b). Figure 1 e) shows the electron transparency of the SACNT film tested in an electrostatic focus electron gun system. The schematic measurement circuit is shown in Figure S1 in the supporting information. Evidently, the electron transparencies of both types of SACNT films are almost identical. (The different transparencies for light and electrons for the two kinds of CNT films should originate from the different wavelengths of light and electrons.) The improved optical transparency after densification also proved the existence of many pores with 4 / 18


Page 4 of 18

Page 5 of 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Nano Letters

micron-scale dimensions. Although the original CNT film shows the same electron transparency as the one after densification, CNTs protrude from the film, thus inducing emission instability. The mechanical properties also improve after densification. Figure 1 f) shows the secondary electron emission coefficient results of the SACNT film. The schematic measurement circuit is also shown in Figure S2 in the supporting information. Clearly, the secondary electron emission coefficient is lower than 1 and reaches a maximum at approximately 400 V. The tested secondary electron emission coefficient ranges from 0.75-0.95, which is also in accordance with the results in

10-11

. This finding shows that the SACNT film gate electrode can meet

the required secondary electron emission coefficient (below 1) to avoid parasitic emission. Certainly, the structure of the CNTs significantly influences the performance of the CNT gate. Although single-walled CNTs (SWCNTs) and double-walled CNTs (DWCNTs) with smaller diameters may benefit the electron transparency, the better mechanical performance and current-carrying ability of MWCNTs12 are essential to the stability. The secondary electron emission of SWCNTs has also been reported to be extremely large13, which is also unsuitable for gate applications. The organization of CNTs also influences the gate performance. For the SACNTs, the connection between the CNTs and the stacking between each layer are two principle factors that need to be considered. Inevitably, the CNTs connect with each other in the film due to their limited length, which are weak points and possibly induce undesired emission for gate applications. Although the effect can be lessened by densification, it seems 5 / 18


Nano Letters 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

that this problem can be ultimately solved only with longer CNTs in the future. More layer-stacking will certainly improve the mechanical and electrical stability but will sacrifice the electron transparency. The stacking angle between layers can change the anisotropy of the sample and influence the mechanical and electrical properties. As a first attempt, this paper studied the application of a two-layer cross-stacked SACNT film as a gate for convenient sample preparation and its relatively high synergistic performance.

Figure 2. Application of a SACNT film gate in a thermionic emission electron tube. a) The cathode and gate parts of the triode tube; b) the vacuum enveloped triode tube; c) anode current variation with the anode voltage at different gate voltages; and d) gate current variation with the gate voltage at different anode voltages.

6 / 18


Page 6 of 18

Page 7 of 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Nano Letters

We first utilized the SACNT film gate in a thermionic emission triode tube, which is a necessary part in high-fidelity audio systems for power amplification 14-16. The SACNT film was directly wrapped around the metal wire frame, as shown in Figure 2 a). The SACNT film gate was vacuum enveloped as in conventional procedures. The fabricated tube is shown in Figure 2 b), and Figure 2 c) shows the anode IV curves at different gate voltages. The corresponding curves of the metal wire gate are also tested, as shown in the supporting information. At the same gate voltage, the anode with the SACNT film gate draws less current than that with the metal wire gate. This result indicates that the SACNT film gate can more effectively screen the anode influence on the cathode. We can find the same phenomena from the gate IV curves at different anode voltages in Figure 2 d). For the tube with a SACNT film gate, the influence range of the anode voltage is much narrower than that for the metal wire gate. The calculated transconductance and internal resistance of the SACNT film gate are 1.72×10-3 S and 3409 ohms, respectively. For the metal wire gate, the calculated transconductance and internal resistance are 2.54×10-3 S and 1312 ohms, respectively. According to the Barkhausen relation16-17, we can obtain a permeability of 0.17 for the SACNT film gate, which is smaller than that of the metal wire gate (0.30). The corresponding amplification factor of the SACNT film gate is 5.9, which is almost twice of that of metal wire gate (3.3). The CNT film gate can more effectively control electrons.

7 / 18


Nano Letters 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Figure 3. Application of the thermionic emission CNT film gate triode tube in an audio amplification circuit. a) The schematic of the audio amplification circuit and b) the audio instruments; the inset is the vacuum triode tube.

We tested the performance of the SACNT film gate triode tube in an audio amplification circuit, which operates under the class A state. Figure 3 a) shows the schematic circuit, and Figure 3 b) shows the full set of test instruments. The vacuum triode tube is incorporated into the system, with the arrow indicating the position. The inset shows the tube connected in the socket. The SACNT film gate triode can operate normally. The recorded music episode is shown in the supporting information. For comparison, the same episode with a traditional metal wire gate electrode is also presented in the supporting information. The SACNT film gate seems to at least reproduce the performance of the traditional metal wire tube, but evaluating its performance in detail will require the subjective experience of professional audiophiles. The effective control of the SACNT film gate can also be used in the field emission structure, where the emitters are very sensitive to the electric field intensity. As CNTs are also excellent field emitters, we used the SACNT film as the gate of a 8 / 18


Page 8 of 18

Page 9 of 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Nano Letters

CNT field emission display18-19 prototype. The structure is fabricated by screening, printing and laser cutting technology, as we have done before20-21. Figure 4 a) and b) shows the top-view and cross-sectional SEM images of an individual unit, respectively. The SACNT film was suspended above the CNT paste emitter (dark area in Figure 4 a)) at a distance of approximately 100 µm. For field emission applications, one of the most concerning issues is the mechanical stability of the SACNT film gate because an intense electric field is usually required to draw out electrons from the emitter. We measured the deformation of the SACNT film under an applied electric field using an optical profile meter. The results are shown in Figure 4 c) and d). The deformation of the SACNT film under 50 V is approximately 10 µm, which is approximately 1.5% of the diameter of the SACNT film gate and 1/10 of the distance between the CNT emitter and gate. The deformation monotonically increases with the voltage. Since the deformation is obviously larger than the thickness of the SACNT film, we can adopt the thin film model to analyze the deformation of the SACNT film gate. According to the traditional thin film model22-23, the deformation will follow a 2/3 order with the applied voltage. However, the experimental result shows that the deformation follows an order of approximately 1.5 order with the applied voltage. These relationships are deduced in detailed in the supporting information. This discrepancy should be caused by the fact that the SACNT film is porous and anisotropic.

9 / 18


Nano Letters 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Figure 4. SEM images of the SACNT film gate on a field emission device. a) and b) the top and the cross-sectional views, respectively; c) and d) the mechanical deformation measurement of the SACNT film gate with c) being the deformation curve of the SACNT film at different gate voltages and d) being the maximum deformation vs the applied voltage, while the inset is the deformation topography.

The emission performance of the SACNT film gate field emission display panel is shown in Figure 5. Figure 5 a)-c) shows the emission performance of an individual pixel. Figure 5 a) shows the anode and gate currents with various gate voltages, both of which follow the Fowler-Nordheim24-25 law fairly well. The calculated electron transparency is shown in Figure 5 b). Figure 5 c) shows the IV curves of the total current, and the inset is the FN curve. Clearly, the IV curves are very smooth, and the FN curve is a straight line, which shows that the field emission follows the FN law 10 / 18


Page 10 of 18

Page 11 of 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Nano Letters

very well. Due to the baking procedure during the fabrication process and using an evaporable getter, the influence of adsorbates is greatly alleviated25-26. Figure 5 d)-f) shows the corresponding emission performance of all 32×32 pixels, which is very similar to that of an individual pixel. By assuming the distance between the SACNT film and the bottom CNT paste field emitter tip is approximately 100 µm, we can calculate the field enhancement factor of an individual pixel to be approximately 5306. The all-on data can also be substituted into the FN formula, and the field enhancement factor is approximately 5000. These two values are very close.

Figure 5. Field emission performance of the SACNT film gate. a) The anode and gate currents of an individual pixel; b) the electron transparency of an individual pixel; c) the field emission IV curve of an individual pixel; the inset is the corresponding FN 11 / 18


Nano Letters 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

curve; d) the anode and gate currents of the overall device; e) the electron transparency of the overall device; f) the field emission IV curve of the overall device; the inset is the corresponding FN curve; g) the brightness with the gate voltage of an individual pixel and 3×3 pixels; h) the variations in the brightness and current with time; and i) Chinese characters displayed by the SACNT film gate field emission display prototype.

The luminescence performance is also investigated, and the results are shown in Figure 5 g) and h). Both the average brightness and that of an individual pixel can be modulated very well by the gate voltage. During the stability measurement with an interval of approximately 2000 s, the brightness positively correlates with the anode current. The emission current and brightness both slightly increase with time, which may originate from the self-alignment of the CNT paste emitter under the applied electric field. The CNT film gate field emission display prototype can be simply derived with a home-designed circuit. Figure 5 i) shows the results of displaying dynamic Chinese characters. The power consumption for the all-on state is only 75 mW for 32×32 pixels with an area of 22 cm2. For one pixel, the power consumption is 73 µW. The non-uniformity of the brightness may originate from the non-uniformity of the cathode. In summary, we used the SACNT film as the gate for two kinds of vacuum electronic devices, a thermionic emission triode tube and a field emission display prototype. The SACNT film gate better controls the electrons than the conventional 12 / 18


Page 12 of 18

Page 13 of 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Nano Letters

metal wire gate in the thermionic emission triode. The triode tube with the SACNT film gate was used in an audio amplification system. The SACNT film gate is also mechanically stable under an intense electric field for electron emission. We also demonstrated the dynamic display of Chinese characters. Due to its ultrasmall thickness, high electron transparency, low secondary electron emission, and thermal and mechanical stability, the SACNT film gate can find more applications in vacuum electronics.

Associated Content: Experimental details for the measurement of the electron transparency, secondary electron emission coefficient, characteristic curve of the original metal wire gate tube, brief description of the fabrication process of the field emission structure, measurement of CNT field emission without the SACNT film gate for comparison, evaluation of the mechanical stability of the SACNT film gate in a field emission structure, SEM images of a CNT field emitter and a SACNT film gate in the field emission structure, and the characters displayed by the SACNT film gate field emission display prototype. The two audio files are a Chinese song played using the vacuum tube amplifier with the metal wire gate or the CNT film gate. The video file shows dynamically displayed characters using the field emission display prototype.

Acknowledgments. This work is financially supported by the National Key R&D Program of China (2018YFA0208401, 2017YFA0205800), NSFC (51727805, 13 / 18


Nano Letters 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

51672152). This work is supported in part by the Beijing Advanced Innovation Center for Future Chip (ICFC). The authors thank Zhang Qingyang, Su Jiani, and Qi Yuejing for their valuable help characterizing the SACNT film microscopy. The authors gratefully thank Liu Zhesheng for help fabricating the vacuum tube.

14 / 18


Page 14 of 18

Page 15 of 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Nano Letters

Reference 1.

Feng, C.; Liu, K.; Wu, J. S.; Liu, L.; Cheng, J. S.; Zhang, Y. Y.; Sun, Y. H.; Li, Q. Q.; Fan, S. S.;

Jiang, K. L., Flexible, Stretchable, Transparent Conducting Films Made from Superaligned Carbon Nanotubes. Adv Funct Mater 2010, 20 (6), 885-891. 2.

Jiang, K. L.; Li, Q. Q.; Fan, S. S., Nanotechnology: Spinning continuous carbon nanotube yarns -

Carbon nanotubes weave their way into a range of imaginative macroscopic applications. Nature 2002, 419 (6909), 801-801. 3.

Jiang, K. L.; Wang, J. P.; Li, Q. Q.; Liu, L. A.; Liu, C. H.; Fan, S. S., Superaligned Carbon

Nanotube Arrays, Films, and Yarns: A Road to Applications. Adv Mater 2011, 23 (9), 1154-1161. 4.

Zhang, L.; Feng, C.; Chen, Z.; Liu, L.; Jiang, K. L.; Li, Q. Q.; Fan, S. S., Superaligned carbon

nanotube grid for high resolution transmission electron microscopy of nanomaterials. Nano Lett 2008, 8 (8), 2564-2569. 5.

Eichmeier, J. A.; Thumm, M. K., Vacuum Electronics-Components and Devices. Springer: Berlin

Heidelberg New York, 2008. 6.

Sun, J. R., Handbook of electronic industry production technology. National Defense Industry

Press: Beijing, 1990; Vol. 4. 7.

Бдискунов,

Η.

Α.;

Каменецкий,

И.

Я.,

ТЕХНОЛОГИЯ

ПРОИЗВОЛСТВА

ЭЛЕКТРОВАКУУМНЫХ ПРИБОРОВ Ⅱ. National Defense Industry Press: Beijing, 1961. 8.

Zhang, X. B.; Jiang, K. L.; Teng, C.; Liu, P.; Zhang, L.; Kong, J.; Zhang, T. H.; Li, Q. Q.; Fan, S.

S., Spinning and processing continuous yarns from 4-inch wafer scale super-aligned carbon nanotube arrays. Adv Mater 2006, 18 (12), 1505-+. 9.

Liu, P.; Zhou, D. L.; Wei, Y.; Jiang, K. L.; Wang, J. P.; Zhang, L. N.; Li, Q. Q.; Fan, S. S., Load 15 / 18


Nano Letters 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Characteristics of a Suspended Carbon Nanotube Film Heater and the Fabrication of a Fast-Response Thermochromic Display Prototype. Acs Nano 2015, 9 (4), 3753-3759. 10. Alam, M. K.; Nojeh, A., Monte Carlo simulation of electron scattering and secondary electron emission in individual multiwalled carbon nanotubes: A discrete-energy-loss approach. J Vac Sci Technol B 2011, 29 (4). 11. Alam, M. K.; Yaghoobi, P.; Chang, M.; Nojeh, A., Secondary electron yield of multiwalled carbon nanotubes. Appl Phys Lett 2010, 97 (26). 12. Li, H. J.; Lu, W. G.; Li, J. J.; Bai, X. D.; Gu, C. Z., Multichannel ballistic transport in multiwall carbon nanotubes. Phys Rev Lett 2005, 95 (8). 13. Nojeh, A.; Shan, B.; Cho, K.; Pease, R. F. W., Ab initio modeling of the interaction of electron beams and single-walled carbon nanotubes. Phys Rev Lett 2006, 96 (5). 14. Maillet, J.-C., Algebraic technique for modeling triods. Glass audio 1998, 10 (2), 28-41. 15. Arguimbau, L. B., Vacuum-tube circuits and transistors. John Wiley & Sons, Inc. ; London : Chapman & Hall, Ltd.: New York, 1956. 16. Millman, J., Vacuum-tube and semiconductor electronics. McGraw-Hill Book Co., Inc.: New York, 1958. 17. Stocker, H., Handbook of physics. Peking University Press: 2004. 18. Jorio, A.; Dresselhaus, G.; Dresselhaus, M. S., Carbon Nanotubes Advanced Topics in the Synthesis, Structure, Properties and Applications. Springer-Verlag Berlin Heidelberg: 2008; Vol. 111. 19. Baughman, R. H.; Zakhidov, A. A.; de Heer, W. A., Carbon nanotubes - the route toward applications. Science 2002, 297 (5582), 787-792. 16 / 18


Page 16 of 18

Page 17 of 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Nano Letters

20. Hao, H. Y.; Liu, P.; Tang, J.; Cai, Q.; Fan, S. S., Secondary electron emission in a triode carbon nanotube field emission display and its influence on the image quality. Carbon 2012, 50 (11), 4203-4208. 21. Liu, P.; Liu, L.; Wei, Y.; Liu, K.; Chen, Z.; Jiang, K. L.; Li, Q. Q.; Fan, S. S., Fast High-Temperature Response of Carbon Nanotube Film and Its Application as an Incandescent Display. Adv Mater 2009, 21 (35), 3563-+. 22. Qian, W. C., Large deflection problem of elastic thin plate. Chinese Acadmy of Science: Beijing, 1954. 23. Hencky, H., Uber den Spannungszustand in Kreisrunden Flatten mit Vershwindender Biegungssteifigkeit. Zeit. f. Math. u. Physik. 1915, 63, 311-317. 24. Fowler, R. H.; Nordheim, L., Electron emission in intense electric fields. P R Soc Lond a-Conta 1928, 119 (781), 173-181. 25. de Jonge, N.; Bonard, J. M., Carbon nanotube electron sources and applications. Philos T R Soc A 2004, 362 (1823), 2239-2266. 26. Liu, P.; Jiang, K. L.; Wei, Y.; Liu, K.; Liu, L. A.; Fan, S. S., Field emission behavior study of multiwalled carbon nanotube yarn under the influence of adsorbents. J Vac Sci Technol B 2010, 28 (4), 736-739.

17 / 18


Nano Letters 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

TOC graphic

18 / 18


Page 18 of 18

Carbon Nanotube Film Gate in Vacuum Electronic Devices - Nano

Recommend Documents