Chem. Mater. 2004, 16, 1667-1673
1667
Chemical Vapor Deposition of Cerium Oxide Films from a Cerium Alkoxide Precursor Seigi Suh, Jun Guan, Liliana A. Mıˆinea, Jean-Se´bastien M. Lehn, and David M. Hoffman* Department of Chemistry and Center for Materials Chemistry, University of Houston, Houston, Texas 77204-5003 Received December 31, 2003. Revised Manuscript Received February 17, 2004
The cerium(IV) alkoxide complex Ce(OCMe2-i-Pr)4, a volatile, nonfluorinated source of cerium, was used as a chemical vapor deposition precursor to cerium oxide films. A conventional thermal chemical vapor deposition process deposited cerium(IV) oxide films from Ce(OCMe2-i-Pr)4 on silicon, glass, quartz, lanthanum aluminum oxide (001), and rolltextured nickel (001) substrates at low substrate temperatures (
