Chem. Mater. 1993,5, 1715-1721
1715
Chemical Vapor Deposition of Ruthenium and Osmium Thin Films Using (Hexafluoro-2-butyne)tetracarbonylruthenium and -osmium Yoshihide Senzaki,+ Wayne L. Gladfelter,**+and F r e d B. McCormickt Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455, and 3M Corporate Research Laboratories, S t . Paul, Minnesota 55144 Received June 14, 1993. Revised Manuscript Received September 23,1993"
The known mononuclear ruthenium complex Ru(hfb) (CO)4,where hfb stands for hexafluoro2-butyne, has a vapor pressure of 1.5 Torr at 25 "C and forms reflective ruthenium thin films by chemical vapor deposition (CVD) using HZcarrier gas with a growth rate of 21 nm/min at 500 "C. The resistivity of a ruthenium film having a grain size of 60 nm was 22 pQ cm. Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and X-ray diffraction (XRD) analyses indicated that the films were pure, polycrystalline ruthenium (
