Effect of annealing on room temperature I-V of LSMO/CNT/LSMO lateral devices 60
Annealing Temperature 320 C 360 C 400 C 440 C
40
I (uA)
20
0.5 mm gap 0
-20
LSMO
LSMO
-40
Area wiith CNT
-60 -1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
V (V)
Current increases upon low temperature annealing, but it starts to decrease for T>400 C, indicating that 400C vacuum anneal is the optimal condition for LSMO/CNT interfaces.