CNT

V (V) 320 C 360 C 400 C 440 C ... to decrease for T>400 C, indicating that 400C vacuum anneal is the optimal condition for LSMO/CNT interfaces...
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Effect of annealing on room temperature I-V of LSMO/CNT/LSMO lateral devices 60

Annealing Temperature 320 C 360 C 400 C 440 C

40

I (uA)

20

0.5 mm gap 0

-20

LSMO

LSMO

-40

Area wiith CNT

-60 -1.5

-1.0

-0.5

0.0

0.5

1.0

1.5

2.0

V (V)

Current increases upon low temperature annealing, but it starts to decrease for T>400 C, indicating that 400C vacuum anneal is the optimal condition for LSMO/CNT interfaces.