Addition/Correction pubs.acs.org/NanoLett
Correction to All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor Saptarshi Das,* Richard Gulotty, Anirudha V. Sumant, and Andreas Roelofs Nano Lett. 2014, 14 (5), 2861−2866. DOI: 10.1021/nl5009037 1. In Figure 2 panel e, the dotted black line is mis-angled. It appears that the line represents the slope at the point where it
Figure 2. Panel e.
intersects the solid black curve. However, the line was intended to represent the average subthreshold slope over 4 orders of magnitude (which is correctly indicated as 130 mV/decade both inside the figure as well as in the main text of the article). The revised Figure 2e has the line redrawn. This correction does not have any impact on the findings of the paper. 2. In Figure 3 panels b,e, the IDS versus VGS characteristics show an unnatural wavy pattern. Upon inspection of the raw experimental data files, we found that the plot function used to generate the figures had low precision that resulted in roundingoff of the data and gave rise to such unnatural features. The revised Figure 3b,e contains the high precision raw data. This correction does not have any impact on the findings of the paper. 3. Finally, there is a typographical error in Figure 3e. The layer thickness is two layers (2-layer) instead of three layers (3-layer) as indicated in the text inside the figure. This correction does not have any impact on the findings of the paper.
© XXXX American Chemical Society
Figure 3. Top, panel b; bottom, panel e.
A
DOI: 10.1021/acs.nanolett.6b00352 Nano Lett. XXXX, XXX, XXX−XXX
