Jul 11, 2012 - Wenjing Fang , Allen Hsu , Yong Cheol Shin , Albert Liao , Shengxi Huang , Yi Song , Xi Ling , Mildred S. Dresselhaus , Tomas Palacios ...
Oct 19, 2011 - Zewdu M. Gebeyehu , Aloïs Arrighi , Marius V. Costache , Clivia M. ..... Akbari-Sharbaf , Sabastine Ezugwu , Reg Bauld , Giovanni Fanchini.
Oct 19, 2011 - Crystallographic Characterization and Control of Domain Structure within Individual Graphene Islands .... Domain size, layer number and morphology control for graphene grown by chemical vapor deposition ..... Jaewoo Park , Arash Akbari
Jul 4, 2017 - We note that the etch rate appears to increase as etching proceeds. .... Figure 7. (a) QCM analysis of WF6 etching following 50, 100, and 200 ...
Jul 4, 2017 - The 99.99% tungsten hexafluoride (WF6) and 99.9% boron trichloride (BCl3) were purchased in stainless steel lecture bottles from Galaxy Chemical and Matheson, ... Prior to ALE, Al2O3 and TiO2 ALD films were deposited using x/Ar/H2O/Ar o
Controlled thin film etching is essential for further development of sub-10 nm semiconductor devices. Vapor-phase thermal etching of oxides is appealing for achieving highly conformal etching of high aspect ratio features. We show that tungsten hexaf
Jul 4, 2017 - For these tests, a 6 MHz gold coated QCM crystal sensor (Inficon) was placed into the QCM housing. ...... Park , K. J.; Terry , D. B.; Stewart , S. M.; Parsons , G. N. In Situ Auger Electron ...... in Fallon, Nevada, an acute lymphocyti
Publication Date (Web): October 28, 2011 .... Whi Dong Kim , Ji-Hee Kim , Sooho Lee , Seokwon Lee , Ju Young Woo , Kangha Lee , Weon-Sik Chae , Sohee ...
Mar 2, 2014 - Understanding Anisotropic Plasma Etching of Two-Dimensional Polystyrene .... backbone though ion bombardment during plasma exposure and is ..... K. J.; Byun , D. Mimicking a Superhydrophobic Insect Wing by Argon and ...
Jun 20, 1989 - Deep Anisotropic Etching of Tapered Channels in. (llO)-Oriented Silicon. Edward S. Kolesar, Jr.,* and Michael W. Carver. Air Force Institute of ...
Mar 2, 2014 - Role of interactions in the magneto-plasmonic response at the geometrical threshold of surface continuity. Evangelos Th. Papaioannou , Hui Fang , Blanca Caballero , Eser Metin Akinoglu , Michael Giersig , Antonio GarcÃa-MartÃn , Paul
ADDITIONS AND CORRECTIONS
Correction to Anisotropic Hydrogen Etching of Chemical Vapor Deposited Graphene [ACS Nano 2012, 6, 126–132. DOI: 10.1021/nn202996r]. Yi Zhang, Zhen Li, Pyojae Kim, Luyao Zhang, and Chongwu Zhou* The bottom two SEM images in the original Table of Contents graphic were misplaced for etched graphene before and after transfer. We swapped the two SEM images and the corrected Table of Contents graphic is shown below.
