Correction to Effective Cleaning of Hexagonal Boron Nitride for

Addition/Correction pubs.acs.org/NanoLett

Correction to Effective Cleaning of Hexagonal Boron Nitride for Graphene Devices Andrei G. F. Garcia, Michael Neumann, François Amet, James R. Williams, Kenji Watanabe, Takashi Taniguchi, and David Goldhaber-Gordon* Nano Lett. 2012, 12 (9), 4449−4454. DOI: 10.1021/nl3011726

T

here are typographical errors in the captions to Figures 4 and 5. In the caption to Figure 4, lines 11−12, “(e) after treatment in Ar/H2 at 350 °C, (f) after treatment in Ar/H2 at 500 °C” should instead be “(e) after treatment in Ar/O2 at 350 °C, (f) after treatment in Ar/O2 at 500 °C”. Similarly, in the caption to Figure 5, lines 8−9, “(e) after treatment in Ar/H2 at 350 °C, and (f) after subsequent heat treatment in Ar/H2 at 500°C” should instead be “(e) after treatment in Ar/O2 at 350 °C, and (f) after subsequent heat treatment in Ar/O2 at 500 °C”. The passages in the main text that refer to these figures provide the correct information.

Published: April 3, 2013 © 2013 American Chemical Society

2314

dx.doi.org/10.1021/nl401130d | Nano Lett. 2013, 13, 2314−2314