Correction to Molecular Orbital Gating Surface-Enhanced Raman Scattering Chenyang Guo, Xing Chen, Song-Yuan Ding, Dirk Mayer, Qingling Wang, Zhikai Zhao, Lifa Ni, Haitao Liu, Takhee Lee,* Bingqian Xu,* and Dong Xiang* ACS Nano 2018, 12 (11), 11229−11235 DOI: 10.1021/acsnano.8b05826 Downloaded via 95.181.183.23 on April 12, 2019 at 14:47:02 (UTC). See https://pubs.acs.org/sharingguidelines for options on how to legitimately share published articles.
S Supporting Information *
e found that the X-axis scales in Figure S7 in the Supporting Information were incorrect. The corrected and revised Figure S7 and corresponding figure caption are provided.
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REFERENCES (1) Xiang, D.; Jeong, H.; Kim, D.; Lee, T.; Cheng, Y. J.; Wang, Q. L.; Mayer, D. Three-Terminal Single-Molecule Junctions Formed by Mechanically Controllable Break Junctions with Side Gating. Nano Lett. 2013, 13, 2809−2813.
Figure S7. Source−drain current (ISD) versus gate voltage (VG) for the Au−BDT−Au molecular junction and molecule-absent junction. (a) The current was dramatically modulated by the gate voltage in the molecule bridged junction. Inset: Schematic of three-terminal molecule junctions. (b) No gate-controlled current was observed in the molecule-absent junction. The inset schematics illustrate the three-terminal junction. Reproduced with permission from ref 1. Copyright (2013) American Chemical Society.
We also provide a complete Supporting Information file that contains the corrected Figure S7 and figure caption.
ASSOCIATED CONTENT S Supporting Information *
The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsnano.9b02533.
Received: April 1, 2019
Original SI file with corrected Figure S7 (PDF) © XXXX American Chemical Society
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DOI: 10.1021/acsnano.9b02533 ACS Nano XXXX, XXX, XXX−XXX
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Cite This: ACS Nano XXXX, XXX, XXX−XXX