Addition/Correction www.acsami.org
Correction to Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Nonvolatile Memory Applications Hao Zhu,* Sujitra J. Pookpanratana, John E. Bonevich, Sean N. Natoli, Christina A. Hacker,* Tong Ren, John S. Suehle, Curt A. Richter, and Qiliang Li* ACS Appl. Mater. Interfaces 2015, 7 (49), 27306−27313; 10.1021/acsami.5b08517
T
he authors note that eq 2 in the original published manuscript was incorrect. The correct version is given below:
( ) t
ΔVTh
ln tAlO‐out qN qN AlO‐in = ≅ = qN C Redox CAlO 2πε0εAlOL
where q is the elementary charge, N is the total charge stored in the redox centers, CRedox is the total capacitance arising between the redox centers and the metal gate, CAlO is the capacitance of the Al2O3 layer, εAlO is the dielectric constant of Al2O3, L is the channel length, tAlO‑out and tAlO‑in are the distances from the center of Si nanowire to the outside and inside surfaces of the Al2O3 layer. We neglect the contribution of the molecular component between the redox center and the Al2O3 because it is only about 0.5 nm, which is significantly shorter than the Al2O3 (25 nm). The charge density calculated for the ferrocene molecular flash memory is around 4.97 × 1012 cm−2, which is still comparable to the results obtained from the capacitor structure. The overall charge density of the Ru2 SAM calculated with the same equation by using the ΔVth at the second charged state is around 5.74 × 1012 cm−2. Even though this charging density is about 20% of the coverage density of Ru2 molecules obtained from the cyclic voltammetry measurement, effective memory characteristics have still been achieved. The conclusions of the original work are not affected. The authors regret this mistake.
© XXXX American Chemical Society
A
DOI: 10.1021/acsami.6b08439 ACS Appl. Mater. Interfaces XXXX, XXX, XXX−XXX
