Correction to Simple Hydrogen Plasma Doping Process of Amorphous

Apr 5, 2018 - Correction to Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-Based Phototransistors for Visible Light Dete...
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Cite This: ACS Appl. Mater. Interfaces XXXX, XXX, XXX−XXX

Correction to Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-Based Phototransistors for Visible Light Detection Byung Ha Kang, Won-Gi Kim, Jusung Chung, Jin Hyeok Lee, and Hyun Jae Kim* ACS Appl. Mater. Interfaces 2018, 10 (8), pp 7223−7230. DOI: 10.1021/acsami.7b17897

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age 7229. The authors forgot to mention people who helped with the spectroscopic photocurrent−voltage measurement for our research in the Acknowledgment section of the paper. The authors regret the mistake. The correct Acknowledgment is below.



ACKNOWLEDGMENTS This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIT) (2017R1A2B3008719). The spectroscopic photocurrent−voltage measurement was performed by Kosala Yapabandara and Prof. Minseo Park at Auburn University.

© XXXX American Chemical Society

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DOI: 10.1021/acsami.8b04920 ACS Appl. Mater. Interfaces XXXX, XXX, XXX−XXX