Correction to Structural Dynamics and Evolution of Bismuth Film

Correction pubs.acs.org/acscatalysis

Correction to Structural Dynamics and Evolution of Bismuth Film Electrodes during Electrochemical Reduction of CO2 in ImidazoliumBased Ionic Liquid Solutions Jonnathan Medina-Ramos,*,† Sang Soo Lee,† Timothy T. Fister,† Aude A. Hubaud,† Robert L. Sacci,‡ David R. Mullins,§ John L. DiMeglio,∥ Rachel C. Pupillo,∥ Stephanie M. Velardo,∥ Daniel A. Lutterman,*,§ Joel Rosenthal,*,∥ and Paul Fenter*,† †

Chemical Sciences and Engineering Division, Argonne National Laboratory, Lemont, Illinois 60439, United States Materials Science and Technology Division and §Chemical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States ∥ Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, United States ‡

ACS Catal. 2017, 7 (10), 7285−7295. DOI: 10.1021/acscatal.7b01370 n row 18 of Table S1, under the “Parameter (units)” Daniel A. Lutterman: 0000-0002-4875-6056 column, it read “Bismuth, crystalline layer roughness (Å)” Joel Rosenthal: 0000-0002-6814-6503 but the correct parameter name is “SiC substrate surface Paul Fenter: 0000-0002-6672-9748

I

roughness (Å)”. The correct Table S1 is shown below.

Table S1. Fitting parameters for the low-angle reflectivity signal shown in Figure 3 (inset), obtained using MotoFit Parameter (units) Number of layers Scale Background Fluid layer thickness (Å) Fluid layer SLD (10−6 Å−2) Bismuth oxides layer thickness (Å) Bismuth oxides layer SLD (10−6 Å−2) Bismuth oxides layer roughness (Å) Bismuth, crystalline layer thickness (Å) Bismuth, crystalline layer SLD (10−6 Å−2) Bismuth, crystalline layer roughness (Å) Graphene layer thickness (Å) Graphene layer SLD (10−6 Å−2) Graphene layer roughness (Å) SiC substrate thickness (Å) SiC substrate SLD (10−6 Å−2) SiC substrate surface roughness (Å) χ2

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Value 3 1 0 Infinite 7.2 27.2 ± 0.4 49 ± 1 6.3 ± 0.2 33.6 ± 0.4 60.7 ± 0.9 3.3 ± 0.6 11.4 ± 0.3 13.9 ± 0.6 1.0 ± 0.1 Infinite 27 ± 1 1.0 ± 0.1 25.333

AUTHOR INFORMATION

Corresponding Authors

*E-mail *E-mail *E-mail *E-mail

for for for for

J.M.R.: [email protected]. D.A.L.: [email protected]. J.R.: [email protected]. P.F.: [email protected].

ORCID

Jonnathan Medina-Ramos: 0000-0002-2998-5136 Sang Soo Lee: 0000-0001-8585-474X Timothy T. Fister: 0000-0001-6537-6170 David R. Mullins: 0000-0003-3495-7188 John L. DiMeglio: 0000-0001-5975-5967 © 2017 American Chemical Society

Published: November 8, 2017 8366

DOI: 10.1021/acscatal.7b03616 ACS Catal. 2017, 7, 8366−8366