Articles Anal. Chem. 1996, 68, 4312-4315
Determination of Particle-Bound Metallic Impurities in Semiconductor Grade Gases. 1. Silane S. Laly,* K. Nakagawa, and T. Kimijima
Analysis Group, Tsukuba Laboratories, Nippon Sanso Corporation, 10-Ohkubo Tsukuba, Ibaraki 300-33, Japan S. Taguchi, T. Ikeda, and S. Hasaka
Fine Gas Laboratory, Nippon Sanso Corporation, 498, Yokokura shinden, Ooaza, Oyama, Tochigi 323, Japan
A filter trap method is developed to analyze particle-bound metal impurities in semiconductor grade silane, based on a Teflon membrane filter of pore size 0.1 µm for trapping. The trapping ability of this membrane filter is checked with a laser particle counter of measuring capacity 0.05 µm particle. The particles trapped from SiH4 were measured for Al, Cu, Fe, Mn, Ni, and Zn by ICPMS, GFAAS, and ICP-AES after being dissolved in concentrated HCl. The analytical results showed that the total metallic impurity in silane is
