Diazonaphthoquinone Molecular Glass ... - American Chemical Society

Intel Corporation, Hillsborough, Oregon 97124. ReceiVed December 13, 2006. ReVised Manuscript ReceiVed March 28, 2007. Molecular glass photoresists ...
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Chem. Mater. 2007, 19, 3780-3786

Diazonaphthoquinone Molecular Glass Photoresists: Patterning without Chemical Amplification Daniel Bratton,†,‡ Ramakrishnan Ayothi,† Hai Deng,§ Heidi B. Cao,§ and Christopher K. Ober*,† Department of Materials Science and Engineering, Cornell UniVersity, Ithaca, New York 14853-1501, and Intel Corporation, Hillsborough, Oregon 97124 ReceiVed December 13, 2006. ReVised Manuscript ReceiVed March 28, 2007

Molecular glass photoresists have attracted increasing attention as next-generation replacements for traditional polymeric resists. Most of those reported so far have been based on a contrast generation mechanism known as chemical amplification, but increasing concerns as to the ultimate resolution obtainable by this process prompted us to investigate nonchemically amplified molecular glass resists. In this submission, we describe the synthesis of a p-tert-butyl calix[4]resorcinarene core functionalized with photoactive diazonapthoquinone groups (DNQ-CR). These materials are characterized using conventional wet chemistry techniques, such as NMR, and their amorphous nature was investigated via powder X-ray diffraction. Lithographic characterization using 405 nm radiation resulted in the formation of positive tone images, with both contrast and sensitivity increasing with the degree of functionalization. Exposure to electron-beam radiation resulted in the formation of negative tone images as small as 60 nm, and a probable cross-linking mechanism is discussed.

Introduction The process of optical lithography is the backbone of the semiconductor industry and the resulting nanotechnology revolution.1 These techniques enable the formation of micrometer-sized and in some cases nanometer-scale features of arbitrary complexity, and advances in next generation techniques such as extreme ultraviolet lithography (EUVL) or electron-beam (e-beam) lithography ensure that these methods will continue to be used for the foreseeable future.2-4 In parallel to the research and development of novel lithographic tools, recent years have seen increasing research activity in the areas of novel resist materials. In particular, molecular glass resists have attracted much attention as possible replacements for traditional polymeric resists.5,6 Molecular glass resists are discrete small molecules and may be made with monodisperse molecular weight distributions. They are typically designed with asymmetrical structures and * Corresponding author. Address: Cornell University, Department of Materials Science and Engineering, 310 Bard Hall, Ithaca, NY 14853. Phone: ( 607) 255 8417. Fax: (607) 255 2365. E-mail: [email protected]. † Cornell University. ‡ Present address: Melville Laboratory for Polymer Synthesis, Department of Chemistry, University of Cambridge, UK. § Intel Corporation.

(1) Introduction to Microlithography, 2nd ed.; Thompson, L. F., Willson, C. G., Bowden, M. J., Ed.; American Chemical Society: Washington, DC, 1994. (2) Blumenstock, G. M.; Meinert, C.; Farrar, N. R.; Yen, A. Proc. SPIEInt. Soc. Opt. Eng. 2005, 5645, 188. (3) Cao, H. B.; Roberts, J. M.; Dalin, J.; Chandhok, M.; Meagley, R. P.; Panning, E. M.; Shell, M. K.; Rice, B. J. Proc. SPIE-Int. Soc. Opt. Eng. 2003, 5039, 484. (4) Brainard, R. L.; Cobb, J.; Cutler, C. A. J. Photopolym. Sci. Technol. 2003, 16, 401. (5) Shirota, Y. J. Mater. Chem. 2000, 10, 1. (6) Shirota, Y. J. Mater. Chem. 2005, 15, 75.

bulky side groups to ensure an amorphous character.7,8 The small size of these resists is thought to lead to a variety of advantages, including lower line edge roughness and superior component miscibility.8 Although a wide variety of molecular glass architectures have been described,9-23 the naturally irregular structures of calixarene derivatives have proved (7) Alig, I.; Braun, D.; Langendorf, R.; Wirth, H. O.; Voigt, M.; Wendorff, J. H. J. Mater. Chem. 1998, 8, 847. (8) Tsuchiya, K.; Chang, S. W.; Felix, N. M.; Ueda, M.; Ober, C. K. J. Photopolym. Sci. Technol. 2005, 18, 431. (9) Yoshiiwa, M.; Kageyama, H.; Shirota, Y.; Wakaya, F.; Gamo, K.; Takai, M. Appl. Phys. Lett. 1996, 69, 2605. (10) Yoshiiwa, M.; Kageyama, H.; Wakaya, F.; Takai, M.; Gamo, K.; Shirota, Y. J. Photopolym. Sci. Technol. 1996, 9, 57. (11) Kadota, T.; Kageyama, H.; Wakaya, F.; Gamo, K.; Shirota, Y. Chem. Lett. 2004, 33, 706. (12) Kadota, T.; Yoshiiwa, M.; Kageyama, H.; Wakaya, F.; Gamo, K.; Shirota, Y. Proc. SPIE-Int. Soc. Opt. Eng. 2001, 4345, 891. (13) Kadota, T.; Kageyama, H.; Wakaya, F.; Gamo, K.; Shirota, Y. Mater. Sci. Eng., C 2001, C16, 91. (14) Kadota, T.; Kageyama, H.; Wakaya, F.; Gamo, K.; Shirota, Y. J. Photopolym. Sci. Technol. 1999, 12, 375. (15) Fedynyshyn, T. H.; Sinta, R. F.; Pottebaum, I.; Cabral, A. Proc. SPIEInt. Soc. Opt. Eng. 2005, 5753, 281. (16) Trimble, A. R.; Tully, D. C.; Fre´chet, J. M. J.; Medeiros, D. R.; Angelopoulos, M. Polym. Prepr. (Am. Chem. Soc., DiV. Polym. Chem.) 2000, 41, 325. (17) Tully, D. C.; Trimble, A. R.; Fre´chet, J. M. J. AdV. Mater. (Weinheim, Germany) 2000, 12, 1118. (18) Tully, D. C.; Trimble, A. R.; Fre´chet, J. M. J. Polym. Prepr. (Am. Chem. Soc., DiV. Polym. Chem.) 2000, 41, 142. (19) Sooriyakumaran, R.; Truong, H.; Sundberg, L.; Morris, M.; Hinsberg, B.; Ito, H.; Allen, R.; Huang, W.-S.; Goldfarb, D.; Burns, S.; Pfeiffer, D. J. Photopolym. Sci. Technol. 2005, 18, 425. (20) Sooriyakumaran, R.; Truong, H.; Sundberg, L.; Morris, M.; Hinsberg, B.; Ito, H.; Allen, R.; Huang, W.-S.; Goldfarb, D.; Burns, S.; Pfeiffer, D. Proc. SPIE-Int. Soc. Opt. Eng. 2005, 5753, 329. (21) Kim, J. B.; Oh, T. H.; Kim, K. Proc. SPIE-Int. Soc. Opt. Eng. 2005, 5753, 603. (22) Kim, J. B.; Oh, T. H.; Kwon, Y. G. Proc. SPIE-Int. Soc. Opt. Eng. 2002, 4690, 549. (23) Kim, J. B.; Kwon, Y. G.; Yun, H. J.; Choi, J. H. Proc. SPIE-Int. Soc. Opt. Eng. 2002, 4690, 837.

10.1021/cm062967t CCC: $37.00 © 2007 American Chemical Society Published on Web 06/27/2007

Diazonaphthoquinone Molecular Glass Resists

Chem. Mater., Vol. 19, No. 15, 2007 3781

Scheme 1. Functionalization of p-Tert-butyl-calix[4]resorcinarene with (A) DNQ 1,2-Naphthoquinone-2-diazido-4-sulfonyl Chloride (-4 DNQ) or (B) 1,2-Naphthoquinone-2-diazido-5-sulfonyl Chloride (-5 DNQ)

especially useful as core molecules for molecular glass resists. For example, p-alkylphenol calix[6] arenes,24 pchloromethyl substituted calix[4]arenes,25 and calix[4] resorcinarenes26-28 formulated with a suitable cross-linker have been employed a negative tone resists for e-beam and 365 nm lithography. Recently, we have reported several calix[4]arene and calix[4]resorcinarene derivatives that act as positive tone molecular glass resists for EUVL and e-beam lithography and form images as small as 30 nm.8,29-31 Most molecular glass resists described to date generate contrast upon exposure to radiation using a process known as chemical amplification.32 In this process, a catalytic amount of a material known as a photoacid generator (PAG) is mixed into a formulation together with a resist comprising acidic groups (i.e., phenol or carboxylic acids) protected with acid labile functional groups (i.e., tert-butoxyl groups). Exposure to an appropriate form of radiation generates protons, which diffuse through the resist and catalyze a deprotection reaction, resulting in the exposed regions in a solubility switch from insoluble to soluble in aqueous base. Although this process leads to high sensitivity, there is increasing concern that at small feature sizes (