Anisotropic Optoelectronic Properties of Melt-Grown Bulk CsPbBr3

Aug 13, 2018 - ... as one of the star semiconductors due to its inspiring optoelectronic properties ... Chiral Lead Halide Perovskite Nanowires for Se...
0 downloads 0 Views 5MB Size
Download PDF
Letter Cite This: J. Phys. Chem. Lett. 2018, 9, 5040−5046

pubs.acs.org/JPCL

Anisotropic Optoelectronic Properties of Melt-Grown Bulk CsPbBr3 Single Crystal Peng Zhang, Guodong Zhang,* Lin Liu, Dianxing Ju, Longzhen Zhang, Kui Cheng, and Xutang Tao* State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China

Downloaded via KAOHSIUNG MEDICAL UNIV on September 27, 2018 at 11:00:20 (UTC). See https://pubs.acs.org/sharingguidelines for options on how to legitimately share published articles.

S Supporting Information *

ABSTRACT: All-inorganic perovskite CsPbBr3 has been considered as one of the star semiconductors due to its inspiring optoelectronic properties and higher stability than the organic−inorganic hybrid counterparts. The preparation of large-size single crystals with low trap density and the performance optimization on the devices still challenge the commercial application of this material. Here the large transparent CsPbBr3 single crystal (ϕ 24 mm × 90 mm) was grown by a modified Bridgman method. With the determination of crystallographic directions, the anisotropic optoelectronic properties were investigated for the first time. The result shows a high electron mobility (11.61 cm2/ (V s)) along the b axis, one order of magnitude higher than that along the c axis. Moreover, the photoresponse measurement yields a high responsivity (5.83 A/W) and external quantum efficiency (1360%) on the (001) plane irradiated by the 532 nm laser diode with 1 mW/cm2 under 10 V bias, which is a 305% enhancement compared with the (010) plane. Our study on anisotropic optoelectronic properties of CsPbBr3 will provide a significant approach to enhance the performance of single-crystalline devices.

R

I) single crystals (SCs) with the development of halide perovskite SC growth technique.26−29 For example, Zuo et al. reported a 153.33% enhancement of responsivity for (110) plane of MAPbBr3 SC compared with the (100) plane.26 Ding et al. observed a 135% increased responsivity and 128% heightened external quantum efficiency (EQE) on the (112) plane of MAPbI3 SC compared with those on the (100) plane.28 The above studies show the crystal orientation strongly affects the properties of halide perovskite materials. CsPbBr3 crystallizes in the orthorhombic system (Pnma space group) at room temperature, implying the possible intense anisotropic optoelectronic properties. Some groups have reported the bulk CsPbBr3 SC growth from the melt1,16,30,31 or the solutions14,33−36 as well as the unique properties in optoelectronic detection and radiation detection. However, to the best of our knowledge, there is no systemic report about the optoelectronic anisotropy of CsPbBr3 SC. It may be caused by the difficulty in large-sized CsPbBr3 SC growth and the crystal orientation and processing technique. Therefore, it is impending to process the work of CsPbBr3 SC growth and orientation and investigate the anisotropic optoelectronic properties of CsPbBr3 SC. In this work, we report a large CsPbBr3 SC with a size of ϕ 24 mm × 90 mm grown by a modified vertical Bridgman method. Moreover, the crystallographic orientations of the CsPbBr3 SC were determined by the X-ray orientation technique. On the basis of these achievements, the

ecently, halide perovskites with the general formula ABX3 (where A = CH3NH3, CH(NH2)2, Cs; B = Pb, Sn, Ge; and X = Cl, Br, I) have attracted intense attention due to the inspiring optoelectronic properties, such as large light absorption coefficient,1 high carrier mobility,2 and long carrier diffusion length.3 Combined with the merits of high defect tolerance,4 facile synthesis, and low cost,5,6 this family of compounds shows great potential in the optoelectronic devices including solar cells,7−10 light-emitting diode,11,12 photodetectors,13,14 X-ray and γ-ray detectors,15−17 and laser.18−20 Compared with the organic−inorganic hybrid perovskites, allinorganic CsPbBr3 possesses improved thermal and moisture stability due to the replacement of the volatized organic cation by inorganic Cs+ without deteriorating the optoelectronic properties.21,22 As is well known, the anisotropy of the crystal often affects the properties of the material. In the past few years, many efforts have been made to reveal the influence of the structural anisotropy on the characteristics of halide perovskite materials.23−29 Motta et al. calculated the carrier-transport properties of MAPbI3 in theory and found a significant asymmetry of the mobility that depends on the chargetransport direction with respect to the molecular axis.23 Cho et al. studied the anisotropic charge-transport properties in orientationally pure crystalline MAPbI3 film, showing the widely application of crystal orientation control in optoelectronic devices.24 Jurow et al. reported the controllable anisotropic photon emission resulting from the vertically aligned transition dipole moments in the film of CsPbBr3 nanocubes.25 Except for these crystalline perovskite films, on the contrary, some researchers have also investigated the anisotropic optoelectronic properties of MAPbX3 (X = Cl, Br, © 2018 American Chemical Society

Received: June 21, 2018 Accepted: August 13, 2018 Published: August 13, 2018 5040

DOI: 10.1021/acs.jpclett.8b01945 J. Phys. Chem. Lett. 2018, 9, 5040−5046

Letter

The Journal of Physical Chemistry Letters

Figure 1. (a) Schematic diagram of the vertical Bridgman furnace for CsPbBr3 single-crystal growth. (b) Photographs of the as-grown CsPbBr3 single crystal (upper), polished wafer (lower left), and oriented cuboid CsPbBr3 SC (lower right). (c) Crystal structure of CsPbBr3. (d) XRD patterns of the (100), (010), and (001) crystal wafers.

Figure 2. (a) Ultraviolet−visible absorption spectrum, Tauc plot curve (inset), and fluorescence emission spectrum for CsPbBr3. (b) Timeresolved PL decay transient measurement of CsPbBr3. (c) Ultraviolet photoemission spectroscopy of CsPbBr3. (d) Energy band diagram of CsPbBr3.

5041

DOI: 10.1021/acs.jpclett.8b01945 J. Phys. Chem. Lett. 2018, 9, 5040−5046

Letter

The Journal of Physical Chemistry Letters optoelectronic anisotropy of CsPbBr3 SC was investigated in detail, and the mechanism of the anisotropy was discussed from the crystallographic view. Figure 1a shows the schematic diagram of the crystal growth furnace. By carefully controlling the temperature gradient and cooling procedure, a crack-free CsPbBr3 SC with the size of ϕ 24 mm × 90 mm was successfully grown, which is the largest volume (>40 cm 3 ) CsPbBr3 SC up to now (Figure 1b).1,14,16,30−38 With the optimization of the cutting and polishing technique, a CsPbBr3 crystal wafer (ϕ 24 mm × 2 mm) with good transparency was obtained, as shown in the lower left corner of Figure 1b. CsPbBr3 crystallizes in the orthorhombic system (Pnma space group) at room temperature, and the crystal structure is illustrated in Figure 1c.31 On the basis of that, the crystallographic orientations of CsPbBr3 SC were determined by the X-ray Laue back-diffraction technique (Figure S2) and further confirmed by the X-ray diffraction (XRD) patterns (Figure 1d). Finally, a finely polished oriented cuboid CsPbBr3 SC was obtained for the optoelectronic performance measurement (Figure 1b). The detailed description of the crystal growth and processing technique can be found in the Supporting Information. Figure 2a shows the ultraviolet−visible (UV−vis) absorption spectrum and photoluminescence (PL) spectrum measured by the CsPbBr3 powder, and the inset is the Tauc plot curve converted by the Kubelka−Munk equation for the band-gap calculation.39 CsPbBr3 exhibits a sharp absorption edge at 560 nm in the UV−vis spectrum, corresponding to the band gap of 2.25 eV, which is slightly larger than that of solution-grown crystals (2.16 eV).14 The steady-state PL spectrum peak locates at 547 nm without any defect-level-related emission band, showing an abnormal blue shift (17 meV) compared with the absorption-derived band gap, which can also be found in the previous reports.31,36 The shorter wavelength and sharper PL peak of melt-grown CsPbBr3 compared with that of solution-grown crystals also indicated the fewer defects and impurities in the melt-grown crystal.36,37 The time-resolved PL spectrum (Figure 2b) includes three components: a short lifetime process (τ1 = 1.29 ns, 45.77%), an intermediate lifetime process (τ2 = 7.41 ns, 36.37%), and a long-lived component (τ3 = 43.16 ns, 17.86%). The calculated average lifetime of 10.9 ns is close to the previous study on CsPbBr3 SC (8.5 ns) and nanocrystal (8.9 ns) under 442 nm excitation.1,40 The ultraviolet photoemission spectroscopy (UPS) measurement (Figure 2c) shows that the VBM lies at 1.8 eV below Fermi level and the secondary electron cutoff is 17 eV, leading to the work function of ∼4.22 eV for CsPbBr3.41 On the basis of the band gap and UPS measurement, the energy band diagram of CsPbBr3 is drawn in Figure 2d, showing a n-type semiconductor for the melt-grown CsPbBr3. The anisotropic electron-transport properties in CsPbBr3 SC were determined for the first time by the space-chargelimited current (SCLC) measurement with a simple sandwich structure of Ti/CsPbBr3 SC/Ti, as shown in the inset of Figure 3a−c. Ti electrodes (70 nm thickness, 6 mm length, and 3 mm width) were applied to form electron-injection devices on account of the shallow work function.42 In the current− voltage (I ≈ Vn) curves, the Ohmic (n = 1), trap-filling (n > 3), and Child (n = 2) regions were all observed with the increase in bias voltage. The trapping state densities were calculated using the equation

Figure 3. Dark current−voltage characteristics of CsPbBr3 SC measured by SCLC method along the (a) a, (b) b, and (c) c directions.

n=

2VTFLεε0 eL2

(1)

where VTFL is the trap-filled limit voltage, L is the thickness of the sample, ε is the relative dielectric constant for CsPbBr3 (measured to be approximately 22.9, 23.9, and 23.2 along the a, b, and c directions, respectively), ε0 is vacuum permittivity, and e is the elementary charge. Hence the trap density of three crystal planes was calculated to be 1.65 × 1010, 6.31 × 1010, and 1.08 × 109 cm−3 for the a, b, and c directions, respectively, which is comparable to the reported halide perovskite singlecrystalline CsPbBr3,1 MAPbI3,3 FAPbI3,43 and MAPbBr3.44 The electron mobility was estimated from the Child region according to Mott−Gurney’s equation μ=

8JDL3 9εε0V 2

(2)

where JD is the current density and V is the applied voltage. According to the equation, the higher electron mobility of 11.61 cm2/(V s) is derived along the b direction, whereas it is only 3.54 and 1.62 cm2/(V s) for the a and c directions, respectively, showing an obvious anisotropy of electron5042

DOI: 10.1021/acs.jpclett.8b01945 J. Phys. Chem. Lett. 2018, 9, 5040−5046

Letter

The Journal of Physical Chemistry Letters

Figure 4. (a−c) Schematic diagrams of the three devices on (100), (010), and (001) planes, respectively. (d−f) I−V curves under dark and 532 nm illumination for (100), (010), and (001) plane, respectively. (g−i) Responsivity (R) and external quantum efficiency (EQE) for (100), (010), and (001) planes, respectively. (j−l) Detectivity (D*) of these three devices.

transport properties. The better electron-transport ability along the b direction can be explained by the difference of the carrier-transport paths in the crystal structure; that is, the [PbBr6]4− octahedra align in the b direction, leading to the Br−Pb−Br continuous bonds (inset of Figure 3b). The interconnected [PbBr6]4− octahedra form straight chains along the b direction that benefit the carrier transport. In contrast, the [PbBr6]4− and Cs+ array alternately with respect to the a or c directions; in other words, the octahedra form zigzag chains along the a or c direction (inset of Figure 3a,c), which reduces the overlap of the Br-p orbital, suppressing the carrier transport.23 To investigate the optoelectronic anisotropy of the crystal, the photoresponse measurements of the (100), (010), and (001) planes were performed. As schematically illustrated in Figure 4a−c, a pair of gold interdigital electrodes was deposited on each facet, with the figure width of 200 μm and the effective illuminated area of 8.25 mm2 (Figure S3). By applying this type of electrodes, carriers will transport along the c, a, and b directions in the (100), (010), and (001) planes, respectively. A xenon lamp with exciting light from 365 to 555

nm was applied to determine the wavelength dependence of photoresponse performance, and we found that the optimal excitation wavelength is near 532 nm for all three devices (Figure S4). Thus a laser diode (LD) with a wavelength of 532 nm was adopted for all of the following photoresponse measurements. Figure 4d−f shows the current−voltage (I−V) curves of the three devices measured under dark condition and 532 nm LD irradiation with the power density increasing from 1 to 16.5 mW/cm2. The highest photocurrent of the (100), (010), and (001) planes was obtained under the condition of 16.5 mW/ cm2 and 10 V bias about 2.50, 0.88, and 2.73 mA, respectively. Moreover, the dark currents under 10 V bias were only 1.43, 1.38, and 1.84 μA for (100), (010), and (001) planes, respectively. The current of all three devices increases with the enhancement of the light power density and applied voltage. Notably, the photocurrent steeply increases with enhancing the bias voltage in the low-voltage region (about 0−5 V), and then the photocurrent tends to saturate in the high-voltage region (about 5−10 V). Furthermore, the smaller the irradiation power, the lower the voltage needed for the saturation 5043

DOI: 10.1021/acs.jpclett.8b01945 J. Phys. Chem. Lett. 2018, 9, 5040−5046

Letter

The Journal of Physical Chemistry Letters Table 1. Performance Comparison of the CsPbBr3 Single-Crystal Photodetectors active layer CsPbBr3 CsPbBr3 CsPbBr3 CsPbBr3

R (A/W) @ Vbias (light source, intensity)

EQE (%)

D* (Jones) @Vbias (light source, intensity)

on/off ratio @ Vbias

ref

5.83 @ 10 V (532 nm, 1 mW/cm2) 2 @ 5 V (535 nm, 0.31 mW/cm2) 0.028 @ 5 V (450 nm, 1 mW) 0.028 @ 5 V (550 nm, 10 mW/cm2)

1360 460 7.00 6

2.5 × 1012 @10 V (532 nm, 1 mW/cm2)

103 @ 2 V 103 @ 2 V 100 @ 5 V 105 @ 0 V

our work 1 14 36

SC SC SC SC

1.8 × 1011 @ 5 V (450 nm, 1 mW) 1.7 × 1011 @ 5 V (550 nm, 10 mW/cm2)

Figure 5. Time-dependent photocurrents of (a) (100) plane device, (b) (010) plane device, and (c) (001) plane device.

enhancement compared with the (010) plane, slightly larger than that of the (100) plane. This facet-dependent optoelectronic property can be explained from the structural anisotropy of CsPbBr3, which determines the generation and transport of the charge carriers. According to the previous calculation,4 Br and Pb dominate the state of band gap, whereas Cs has no contribution. Thus the density and the arrangement of [PbBr6]4− units intensely affect the generation, dissociation, and transport of electron−hole pairs.27,45 In the (001) plane, the higher distribution density of [PbBr6]4− than (010) plane contributes to the stronger photoconductivity effect,27 and the excitons are easily dissociated into free charge carrier because of the low exciton bonding energy.45 Moreover, the channel in the b direction further benefits the transport of the photogenerated carriers in the (001) plane, as discussed above. Noticeably, despite the similar distribution density of [PbBr6]4− octahedron in the (001) and (100) planes, the R and EQE on the (001) plane are slightly higher (5.83 A/W and 1360% for R and EQE, respectively) than that of the (100) plane (4.45 A/W and 1037% for R and EQE, respectively). It could be attributed to the different carrier-transport paths on the (001) and (100) planes. As described above, the b direction in the (001) plane is more favorable for the carrier transport than the c direction in the (100) plane, which is responsible for the better photoresponse performance of (001) plane. The photocurrent−time response measurements of (100), (010), and (001) planes were conducted to determine the switching behavior and photocurrent stability. Figure 5a−c shows the time-dependent photocurrent of the three devices with power density of 1 mW/cm2 at different applied voltage. The photocurrents increased and recovered rapidly before and after the light illumination with good repetition, indicating an excellent photocurrent stability. The dark currents along the a, b, and c directions under 4 V bias are 470, 701, and 246 nA, respectively. The higher dark current along the b direction can be attributed to the stronger carrier-transport ability. The high on/off ratio of 103 was obtained for all three devices under 2 V bias, indicating the excellent sensitivity for the photodetectors based on CsPbBr3 SCs. In conclusion, the CsPbBr3 SC with the dimensions of ϕ 24 mm × 90 mm was first grown by a modified Bridgman method,

photocurrent. It is reasonable for the photocurrent to change with this trend. The number of photogenerated carriers is proportional to the irradiation power; at the same time, a corresponding voltage is needed to promote the separation of carriers. When the voltage exceeds the critical value, the photocurrent will not increase because of the thermal recombination of carriers. The spectral responsivity (R), EQE, and detectivity (D*), three key parameters to evaluate the performance of a photoresponse device upon an incident light, were calculated by equations R=

Ipc − Idark P0

(3)

EQE =

R ·hc eλ

(4)

D* =

R 2eIdark /S

(5)

where Ipc and Idark are the photocurrent and dark current for the device, respectively, P0 is the irradiation power density, S is the effective area of the detector, h is the Planck constant, c is the speed of light, λ is the wavelength of irradiation, and e is the elementary charge. As shown in Figure 4g−l, these three parameters have a positive correlation to the applied voltage under a fixed light power density. Furthermore, the values of the three parameters decrease with the enhancement of the irradiation power density under a constant bias voltage, as shown in the Figure S5. The highest R (5.83 A/W), EQE (1360%), and D* (2.5 × 1012 Jones) were obtained for the (001) plane under the 532 nm light with 1 mW/cm2 and 10 V bias, whereas they were 1.44 A/W, 336%, and 6.2 × 1011 Jones for (010) plane and 4.45 A/W, 1037%, and 1.9 × 1012 Jones for (100) plane, respectively. Our photoresponse devices exhibit a better performance compared with the reported results (Table 1), probably due to both the high quality of our melt-grown crystal and the optimization of the devices in orientation and irradiation wavelength. As shown above, these three CsPbBr3 SC devices have an obviously facet-dependent anisotropic optoelectronic property. The R and EQE of the (001) plane exhibit a 305% 5044

DOI: 10.1021/acs.jpclett.8b01945 J. Phys. Chem. Lett. 2018, 9, 5040−5046

Letter

The Journal of Physical Chemistry Letters

(8) Gu, P. Y.; Wang, N.; Wu, A.; Wang, Z.; Tian, M.; Fu, Z.; Sun, X. W.; Zhang, Q. An Azaacene Derivative as Promising ElectronTransport Layer for Inverted Perovskite Solar Cells. Chem. - Asian J. 2016, 11, 2135−2138. (9) Wang, N.; Zhao, K.; Ding, T.; Liu, W.; Ahmed, A. S.; Wang, Z.; Tian, M.; Sun, X. W.; Zhang, Q. Improving Interfacial Charge Recombination in Planar Heterojunction Perovskite Photovoltaics with Small Molecule as Electron Transport Layer. Adv. Energy Mater. 2017, 7, 1700522. (10) Gu, P.-Y.; Wang, N.; Wang, C.; Zhou, Y.; Long, G.; Tian, M.; Chen, W.; Sun, X. W.; Kanatzidis, M. G.; Zhang, Q. Pushing up the efficiency of planar perovskite solar cells to 18.2% with organic small molecules as the electron transport layer. J. Mater. Chem. A 2017, 5, 7339−7344. (11) Li, J.; Xu, L.; Wang, T.; Song, J.; Chen, J.; Xue, J.; Dong, Y.; Cai, B.; Shan, Q.; Han, B.; Zeng, H. 50-Fold EQE Improvement up to 6.27% of Solution-Processed All-Inorganic Perovskite CsPbBr3 QLEDs via Surface Ligand Density Control. Adv. Mater. 2017, 29, 1603885. (12) Wang, N.; Liu, W.; Zhang, Q. Perovskite-Based Nanocrystals: Synthesis and Applications beyond Solar Cells. Small Methods 2018, 2, 1700380. (13) Fang, Y.; Dong, Q.; Shao, Y.; Yuan, Y.; Huang, J. Highly narrowband perovskite single-crystal photodetectors enabled by surface-charge recombination. Nat. Photonics 2015, 9, 679−686. (14) Ding, J.; Du, S.; Zuo, Z.; Zhao, Y.; Cui, H.; Zhan, X. High Detectivity and Rapid Response in Perovskite CsPbBr3 Single-Crystal Photodetector. J. Phys. Chem. C 2017, 121, 4917−4923. (15) Wei, H.; Fang, Y.; Mulligan, P.; Chuirazzi, W.; Fang, H.-H.; Wang, C.; Ecker, B. R.; Gao, Y.; Loi, M. A.; Cao, L.; Huang, J. Sensitive X-ray detectors made of methylammonium lead tribromide perovskite single crystals. Nat. Photonics 2016, 10, 333−339. (16) He, Y.; Matei, L.; Jung, H. J.; McCall, K. M.; Chen, M.; Stoumpos, C. C.; Liu, Z.; Peters, J. A.; Chung, D. Y.; Wessels, B. W.; Wasielewski, M. R.; Dravid, V. P.; Burger, A.; Kanatzidis, M. G. High spectral resolution of gamma-rays at room temperature by perovskite CsPbBr3 single crystals. Nat. Commun. 2018, 9, 1609. (17) Yakunin, S.; Sytnyk, M.; Kriegner, D.; Shrestha, S.; Richter, M.; Matt, G. J.; Azimi, H.; Brabec, C. J.; Stangl, J.; Kovalenko, M. V.; Heiss, W. Detection of X-ray photons by solution-processed organicinorganic perovskites. Nat. Photonics 2015, 9, 444−449. (18) Yakunin, S.; Protesescu, L.; Krieg, F.; Bodnarchuk, M. I.; Nedelcu, G.; Humer, M.; De Luca, G.; Fiebig, M.; Heiss, W.; Kovalenko, M. V. Low-threshold amplified spontaneous emission and lasing from colloidal nanocrystals of caesium lead halide perovskites. Nat. Commun. 2015, 6, 8056. (19) Zhu, H.; Fu, Y.; Meng, F.; Wu, X.; Gong, Z.; Ding, Q.; Gustafsson, M. V.; Trinh, M. T.; Jin, S.; Zhu, X. Y. Lead halide perovskite nanowire lasers with low lasing thresholds and high quality factors. Nat. Mater. 2015, 14, 636−642. (20) Tang, X.; Hu, Z.; Yuan, W.; Hu, W.; Shao, H.; Han, D.; Zheng, J.; Hao, J.; Zang, Z.; Du, J.; Leng, Y.; Fang, L.; Zhou, M. Perovskite CsPb2Br5 Microplate Laser with Enhanced Stability and Tunable Properties. Adv. Opt. Mater. 2017, 5, 1600788. (21) Wu, K.; Liang, G.; Shang, Q.; Ren, Y.; Kong, D.; Lian, T. Ultrafast Interfacial Electron and Hole Transfer from CsPbBr3 Perovskite Quantum Dots. J. Am. Chem. Soc. 2015, 137, 12792− 12795. (22) Sutton, R. J.; Eperon, G. E.; Miranda, L.; Parrott, E. S.; Kamino, B. A.; Patel, J. B.; Hörantner, M. T.; Johnston, M. B.; Haghighirad, A. A.; Moore, D. T.; Snaith, H. J. Bandgap-Tunable Cesium Lead Halide Perovskites with High Thermal Stability for Efficient Solar Cells. Adv. Energy Mater. 2016, 6, 1502458. (23) Motta, C.; El-Mellouhi, F.; Sanvito, S. Charge carrier mobility in hybrid halide perovskites. Sci. Rep. 2015, 5, 12746. (24) Cho, N.; Li, F.; Turedi, B.; Sinatra, L.; Sarmah, S. P.; Parida, M. R.; Saidaminov, M. I.; Murali, B.; Burlakov, V. M.; Goriely, A.; Mohammed, O. F.; Wu, T.; Bakr, O. M. Pure crystal orientation and

and the crystallographic directions were confirmed. The optoelectronic anisotropy that reflects in the anisotropic electron mobility and photoresponse properties was systematically investigated. For this behavior, a possible mechanism was discussed based on the anisotropic structure of CsPbBr3 crystal. These remarkable optoelectronic properties of CsPbBr3 SC will motivate researchers to utilize them for highperformance optoelectronic applications.

■

ASSOCIATED CONTENT

S Supporting Information *

The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.jpclett.8b01945. Experimental details about the crystal growth and measurements (PDF)

■

AUTHOR INFORMATION

Corresponding Authors

*X.T.: E-mail: [email protected]. Tel: 86-531-88364963. *G.Z.: E-mail: [email protected]. Tel: 86-531-88369099. ORCID

Xutang Tao: 0000-0001-5957-2271 Notes

The authors declare no competing financial interest.

■

ACKNOWLEDGMENTS This work was financially supported by the National Natural Science Foundation of China (nos. 51602178, 51321091), Program of Introducing Talents of Disciplines to Universities in China (111 project 2.0 no. BP2018013), and the Fundamental Research Funds of Shandong University. We greatly thank Associate Professor Qian Xin from the College of Microelectronics, Shandong University for her help in the fabrication of electrons. We thank Dr. Yangyang Dang for his helpful discussion about the results of photoresponse properties.

■

REFERENCES

(1) Song, J.; Cui, Q.; Li, J.; Xu, J.; Wang, Y.; Xu, L.; Xue, J.; Dong, Y.; Tian, T.; Sun, H.; Zeng, H. Ultralarge All-Inorganic Perovskite Bulk Single Crystal for High-Performance Visible-Infrared DualModal Photodetectors. Adv. Opt. Mater. 2017, 5, 1700157. (2) Shi, D.; Adinolfi, V.; Comin, R.; Yuan, M.; Alarousu, E.; Buin, A.; Chen, Y.; Hoogland, S.; Rothenberger, A.; Katsiev, K.; Losovyj, Y.; Zhang, X.; Dowben, P. A.; Mohammed, O. F.; Sargent, E. H.; Bakr, O. M. Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals. Science 2015, 347, 519−522. (3) Dong, Q.; Fang, Y.; Shao, Y.; Mulligan, P.; Qiu, J.; Cao, L.; Huang, J. Electron-hole diffusion lengths 175 μm in solution-grown CH3NH3PbI3 single crystals. Science 2015, 347, 967−970. (4) Kang, J.; Wang, L. W. High Defect Tolerance in Lead Halide Perovskite CsPbBr3. J. Phys. Chem. Lett. 2017, 8, 489−493. (5) Snaith, H. J. Perovskites: The Emergence of a New Era for LowCost, High-Efficiency Solar Cells. J. Phys. Chem. Lett. 2013, 4, 3623− 3630. (6) Protesescu, L.; Yakunin, S.; Bodnarchuk, M. I.; Krieg, F.; Caputo, R.; Hendon, C. H.; Yang, R. X.; Walsh, A.; Kovalenko, M. V. Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, and I): Novel Optoelectronic Materials Showing Bright Emission with Wide Color Gamut. Nano Lett. 2015, 15, 3692−3696. (7) Lee, M. M.; Teuscher, J.; Miyasaka, T.; Murakami, T. N.; Snaith, H. J. Efficient Hybrid Solar Cells Based on Meso-Superstructured Organometal Halide Perovskites. Science 2012, 338, 643. 5045

DOI: 10.1021/acs.jpclett.8b01945 J. Phys. Chem. Lett. 2018, 9, 5040−5046

Letter

The Journal of Physical Chemistry Letters anisotropic charge transport in large-area hybrid perovskite films. Nat. Commun. 2016, 7, 13407. (25) Jurow, M. J.; Lampe, T.; Penzo, E.; Kang, J.; Koc, M. A.; Zechel, T.; Nett, Z.; Brady, M.; Wang, L. W.; Alivisatos, A. P.; Cabrini, S.; Brutting, W.; Liu, Y. Tunable Anisotropic Photon Emission from Self-Organized CsPbBr3 Perovskite Nanocrystals. Nano Lett. 2017, 17, 4534−4540. (26) Zuo, Z.; Ding, J.; Zhao, Y.; Du, S.; Li, Y.; Zhan, X.; Cui, H. Enhanced Optoelectronic Performance on the (110) Lattice Plane of an MAPbBr3 Single Crystal. J. Phys. Chem. Lett. 2017, 8, 684−689. (27) Cheng, X.; Jing, L.; Zhao, Y.; Du, S.; Ding, J.; Zhou, T. Crystal orientation-dependent optoelectronic properties of MAPbCl3 single crystals. J. Mater. Chem. C 2018, 6, 1579−1586. (28) Ding, J.; Du, S.; Cheng, X.; Jing, L.; Zhao, Y.; Zuo, Z.; Cui, H.; Zhan, X. Anisotropic optoelectronic performances on (112) and (100) lattice plane of perovskite MAPbI3 single crystal. Mater. Chem. Phys. 2018, 204, 222−227. (29) Zuo, Z.; Ding, J.; Li, Y.; Zhao, Y.; Du, S. Anisotropic ionic transportation performances of (100) and (112) planes in MAPbI3 single crystal. Mater. Res. Bull. 2018, 99, 466−470. (30) Zhang, M.; Zheng, Z.; Fu, Q.; Chen, Z.; He, J.; Zhang, S.; Yan, L.; Hu, Y.; Luo, W. Growth and characterization of all-inorganic lead halide perovskite semiconductor CsPbBr3 single crystals. CrystEngComm 2017, 19, 6797−6803. (31) Stoumpos, C. C.; Malliakas, C. D.; Peters, J. A.; Liu, Z.; Sebastian, M.; Im, J.; Chasapis, T. C.; Wibowo, A. C.; Chung, D. Y.; Freeman, A. J.; Wessels, B. W.; Kanatzidis, M. G. Crystal Growth of the Perovskite Semiconductor CsPbBr3: A New Material for HighEnergy Radiation Detection. Cryst. Growth Des. 2013, 13, 2722−2727. (32) Miao, X.; Qiu, T.; Zhang, S.; Ma, H.; Hu, Y.; Bai, F.; Wu, Z. Air-stable CsPb1−xBi x Br3 (0 ≤ x ≤ 1) perovskite crystals: optoelectronic and photostriction properties. J. Mater. Chem. C 2017, 5, 4931−4939. (33) Zhang, H.; Liu, X.; Dong, J.; Yu, H.; Zhou, C.; Zhang, B.; Xu, Y.; Jie, W. Centimeter-Sized Inorganic Lead Halide Perovskite CsPbBr3 Crystals Grown by an Improved Solution Method. Cryst. Growth Des. 2017, 17, 6426−6431. (34) Rakita, Y.; Kedem, N.; Gupta, S.; Sadhanala, A.; Kalchenko, V.; Böhm, M. L.; Kulbak, M.; Friend, R. H.; Cahen, D.; Hodes, G. LowTemperature Solution-Grown CsPbBr3 Single Crystals and Their Characterization. Cryst. Growth Des. 2016, 16, 5717−5725. (35) Dirin, D. N.; Cherniukh, I.; Yakunin, S.; Shynkarenko, Y.; Kovalenko, M. V. Solution-Grown CsPbBr3 Perovskite Single Crystals for Photon Detection. Chem. Mater. 2016, 28, 8470−8474. (36) Saidaminov, M. I.; Haque, M. A.; Almutlaq, J.; Sarmah, S.; Miao, X.-H.; Begum, R.; Zhumekenov, A. A.; Dursun, I.; Cho, N.; Murali, B.; Mohammed, O. F.; Wu, T.; Bakr, O. M. Inorganic Lead Halide Perovskite Single Crystals: Phase-Selective Low-Temperature Growth, Carrier Transport Properties, and Self-Powered Photodetection. Adv. Opt. Mater. 2017, 5, 1600704. (37) Clark, D. J.; Stoumpos, C. C.; Saouma, F. O.; Kanatzidis, M. G.; Jang, J. I. Polarization-selective three-photon absorption and subsequent photoluminescence in CsPbBr3 single crystal at room temperature. Phys. Rev. B: Condens. Matter Mater. Phys. 2016, 93, 195202. (38) Zhang, M.; Zheng, Z.; Fu, Q.; Chen, Z.; He, J.; Zhang, S.; Chen, C.; Luo, W. Synthesis and single crystal growth of perovskite semiconductor CsPbBr3. J. Cryst. Growth 2018, 484, 37−42. (39) Kubelka, P.; Munk, F. An Article on Optics of Paint Layers. Z. Technol. Phys. 1931, 12, 593−601. (40) Li, X.; Wu, Y.; Zhang, S.; Cai, B.; Gu, Y.; Song, J.; Zeng, H. CsPbX3 Quantum Dots for Lighting and Displays: Room-Temperature Synthesis, Photoluminescence Superiorities, Underlying Origins and White Light-Emitting Diodes. Adv. Funct. Mater. 2016, 26, 2435− 2445. (41) Zhang, X.; Lin, H.; Huang, H.; Reckmeier, C.; Zhang, Y.; Choy, W. C.; Rogach, A. L. Enhancing the Brightness of Cesium Lead Halide Perovskite Nanocrystal Based Green Light-Emitting Devices

through the Interface Engineering with Perfluorinated Ionomer. Nano Lett. 2016, 16, 1415−1420. (42) Adinolfi, V.; Yuan, M.; Comin, R.; Thibau, E. S.; Shi, D.; Saidaminov, M. I.; Kanjanaboos, P.; Kopilovic, D.; Hoogland, S.; Lu, Z.-H.; Bakr, O. M.; Sargent, E. H. The In-Gap Electronic State Spectrum of Methylammonium Lead Iodide Single-Crystal Perovskites. Adv. Mater. 2016, 28, 3406−3410. (43) Liu, Y.; Sun, J.; Yang, Z.; Yang, D.; Ren, X.; Xu, H.; Yang, Z.; Liu, S. F. 20-mm-Large Single-Crystalline Formamidinium-Perovskite Wafer for Mass Production of Integrated Photodetectors. Adv. Opt. Mater. 2016, 4, 1829−1837. (44) Liu, Y.; Zhang, Y.; Zhao, K.; Yang, Z.; Feng, J.; Zhang, X.; Wang, K.; Meng, L.; Ye, H.; Liu, M.; Liu, S. F. A 1300 mm2 UltrahighPerformance Digital Imaging Assembly using High-Quality Perovskite Single Crystals. Adv. Mater. 2018, 30, 1707314. (45) Cha, J. H.; Han, J. H.; Yin, W.; Park, C.; Park, Y.; Ahn, T. K.; Cho, J. H.; Jung, D. Y. Photoresponse of CsPbBr3 and Cs4PbBr6 Perovskite Single Crystals. J. Phys. Chem. Lett. 2017, 8, 565−570.

5046

DOI: 10.1021/acs.jpclett.8b01945 J. Phys. Chem. Lett. 2018, 9, 5040−5046