Carrier Generation Process on Photoconductive ... - ACS Publications

Feb 16, 2006 - Fuyuki Ito,Tadaaki Ikoma,Kimio Akiyama,Akira Watanabe, andShozo Tero-Kubota*: J. Phys. Chem. B , 2006, 110 (10), pp 5161–5162...
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Additions and Corrections

J. Phys. Chem. B, Vol. 110, No. 10, 2006 5161

ADDITIONS AND CORRECTIONS 2006, Volume 110B

2005, Volume 109B

J. Y. Miao, Y. Cai, Y. F. Chan, P. Sheng, N. Wang*: : A Novel Carbon Nanotube Structure Formed in Ultra-Long Nanochannels of Anodic Aluminum Oxide Templates Page 2083. The corrected acknowledgment should read: This work was partially supported by the Hong Kong Research Grants Council (project Nos. HKUST 6073/02P, 603905 and CA04/05. SC02). 10.1021/jp068015s Published on Web 02/21/2006

U. Mohanty,* A. Spasic, H. D. Kim, S. Chu: : Ion Atmosphere of Three-Way Junction Nucleic Acid The volume and page numbers to ref 18 cited in the abstract and in our paper should be 99 and 4284-4289, respectively. 10.1021/jp058309y Published on Web 02/17/2006

2005, Volume 109B

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Fuyuki Ito, Tadaaki Ikoma, Kimio Akiyama, Akira Watanabe, and Shozo Tero-Kubota*: Carrier Generation Process on Photoconductive Polymer Films as Studied by Magnetic Field Effects on the Charge-Transfer Fluorescence and Photocurrent The recombination constant, the boundary interionic distance, and the recombination and escape quantum yields reported in Table 1 of our recent paper1 are in error because of the incorrect matrix element in eq A2 on p 8715. The spin Hamiltonian H ˆ (u) in eq A2 should be presented as follows. |S, I, m〉

|T-, I, m + 1〉

|T0, I, m〉

A xI(I + 1) - m(m + 1) mA 2 2x2 A A m + 1 xI(I + 1) - m(m + 1) xI(I + 1) - m(m + 1) -gµBB A - Ju 2 2x2 2x2 A m xI(I + 1) - m(m + 1) -Ju A 2 2x2 A A xI(I + 1) - m(m - 1) 0 xI(I + 1) - m(m - 1) 2x2 2x2 +Ju

Therefore, the correct forms of eqs A6 and A7 are

|T+, I, m - 1〉 -

A xI(I + 1) - m(m - 1) 2x2

0 A xI(I + 1) - m(m - 1) 2x2 m-1 A - Ju +gµBB + 2

]

(A2)

5162 J. Phys. Chem. B, Vol. 110, No. 10, 2006

Additions and Corrections

{

A xI(I + 1) - m(m ( 1) x 2 2 m(1 A + Ju Yu( ) -gµBB 2 m Z) A 2 X( )

}

(A7)

respectively. We have performed the simulation on the basis of the corrected equations. The corrected results are shown in Figure 1 and Table 1.

Figure 1. Simulations of the MFE on the recombination (R(B), solid lines) and escape (E(B), broken lines) yields calculated using the SLE. The closed and open circles indicate the observed MFE on the recombination and escape yields, respectively. (a) kf dependence of the MFE simulations using three IP sites and kH ) 4.5 × 108 s-1. (b) kH dependence of the MFE simulations using three IP sites and kf ) 5.0 × 107 s-1. (c) n dependence of the MFE simulations using kf ) 5.0 × 107 s-1 and kH ) 4.5 × 108 s-1. (d) Initial condition dependence of the MFE simulations using eleven IP sites, kf ) 5.0 × 107 s-1 and kH ) 4.5 × 108 s-1.

TABLE 1: Optimized Recombination and Hopping-Rate Constants (kf and kH) from the Analysis Based on the SLE Calculation Using the One-Dimensional Lattice Model and the Boundary Interionic Distance (rb) and the Recombination (Grec) and Escape (Gesc) Quantum Yields Derived from Those Parameters kf/s-1 (5.0 ( 1.0) ×

107

kH/s-1

rb/nm

(4.5 ( 1.5) × 108

3-4

Frec

Fesc

0.45 ( 0.11 0.55 ( 0.11

References and Notes (1) Ito, F.; Ikoma, T.; Akiyama, K.; Watanabe, A.; Tero-Kubota, S. J. Phys. Chem. B 2005, 109, 8707. 10.1021/jp0565857 Published on Web 02/16/2006