Chem. Mater. 2005, 17, 6713-6718
6713
Chemical Vapor Deposition of HfO2 Thin Films Using the Novel Single Precursor Hafnium 3-Methyl-3-pentoxide, Hf(mp)4 Taek S. Yang,† Ki-Seok An,† Eun-Joo Lee,† Wontae Cho,† Hong S. Jang,† Sun K. Park,† Young K. Lee,† Taek-Mo Chung,† Chang G. Kim,† Sungmoon Kim,‡ Jin-Ha Hwang,‡ Choongkeun Lee,§ Nam-Soo Lee,§ and Yunsoo Kim*,† Thin Film Materials Laboratory, AdVanced Materials DiVision, Korea Research Institute of Chemical Technology, Yuseong, P.O. Box 107, Daejeon 305-600, Korea, Department of Materials Science and Engineering, Hongik UniVersity, 72-1 Sangsu-dong, Mapo-gu, Seoul 121-791, Korea, and Department of Chemistry, Chungbuk National UniVersity, San 48, Gaeshin-dong, Heungduk-gu, Cheongju, Chungbuk 361-763, Korea ReceiVed March 28, 2005. ReVised Manuscript ReceiVed September 20, 2005
Hafnium oxide films have been deposited on silicon substrates by metal organic chemical vapor deposition using the novel single precursor, hafnium 3-methyl-3-pentoxide {Hf[OC(CH3)(C2H5)2]4, Hf(mp)4}, with no additional oxygen source, and the deposition mechanism was elucidated. Hf(mp)4 is a liquid at room temperature and has a moderate vapor pressure comparable to that of hafnium tertbutoxide, Hf(OtBu)4, and a lower residual weight (
