Correction to “Limits of Carrier Diffusion in n-Type and p-Type

Dec 6, 2017 - 104 (h+). 450 (h+). 3400 (h+) compensated Si34 single rf-PC. 104. −. −. aLifetimes were measured by time-resolved photoluminescence ...
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Addition/Correction pubs.acs.org/JPCL

Correction to “Limits of Carrier Diffusion in n‑Type and p‑Type CH3NH3PbI3 Perovskite Single Crystals” Octavi E. Semonin, Giselle A. Elbaz, Daniel B. Straus, Trevor D. Hull, Daniel W. Paley, Arend M. Van der Zande, James C. Hone, Ioannis Kymissis, Cherie R. Kagan, Xavier Roy, and Jonathan S. Owen* J. Phys. Chem. Lett. 2016, 7 (17), pp 3510−3518. DOI: 10.1021/acs.jpclett.6b01308 crystals and 10−28 μm for the p-type crystals) than our previous estimates. Our simulations assume that the relative permittivity of the methylammonium lead iodide crystals is 60 and that the dark conductivity is 0.167 S/m.1−3 We note that the simulated sensitivity constants are weakly dependent on the dark conductivity and change by 9.0 10 14 2−8 10 50 72−320 10−28 (e−) 27−65 (h+) 33 (e− + h+) 49 (e− + h+) 9.5 (h+) 150 (e−) 1950 (e−) 3400 (h+) −

a

Lifetimes were measured by time-resolved photoluminescence (TRPL), time-resolved photoluminescence-mapping (TRPL-M), two-photon timeresolved photoluminescence (2-TRPL), transient absorption (TA), time-resolved terahertz conductivity (THz), transient photovoltage (TPV), impedance spectroscopy (IS), and rf-photoconductivity (rf-PC). bμ and/or LD were measured using photoluminescence quenching (PLQ), spacecharge limited current (SCLC), Hall effect, and time-of-flight (ToF). Where available, the carrier type is indicated (e−, h+). cTRPL measurements show a lifetime of