Correction to Ambipolar Phosphorene Field Effect Transistor Saptarshi Das,* Marcel Demarteau, and Andreas Roelofs ACS Nano 2014, 8 (11), 11730−11738. DOI: 10.1021/nn505868h Page 11731. It has come to our attention that the x-axis of Figure 1c is mislabeled. It should have been labeled as VBG−
Figure 1c.
VTH instead of VBG because threshold adjustments were done in order to compensate for the top gate bias applied to the device. Additionally, as mentioned in the caption, Figure 1b represents the optical image of a prototype device with a 60 nm capping layer of alumina (to demonstrate the importance of a capping layer for the stabilization of phosphorene devices). The device characteristics shown in Figure 1c do not correspond to the image shown in Figure 1b. Rather the device characteristics presented in Figures 1c and 6b correspond to the same device shown in Figure 6a. This mislabeling neither impacts our analysis nor changes any of the findings of the paper. However, we would like to submit the attached revised figure with correct labeling.
Received: January 27, 2016
© 2014 American Chemical Society
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DOI: 10.1021/acsnano.6b00680 ACS Nano XXXX, XXX, XXX−XXX
Additions and Corrections
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