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Cite This: ACS Appl. Mater. Interfaces 2017, 9, 42996−43003
Highly Sensitive Flexible Pressure Sensors Based on Printed Organic Transistors with Centro-Apically Self-Organized Organic Semiconductor Microstructures So Young Yeo,†,‡ Sangsik Park,§,∥ Yeon Jin Yi,‡ Do Hwan Kim,*,§ and Jung Ah Lim*,†,⊥
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Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul 02792, Korea ‡ Department of Physics, Yonsei University, Seoul 03722, Korea § Department of Chemical Engineering, Hanyang University, Seoul 04763, Korea ∥ Department of Organic Materials and Fiber Engineering, Soongsil University, Seoul 06978, Korea ⊥ Division of Nano and Information Technology, KIST School, Korea University of Science and Technology (KUST), Daejeon 34113, Korea S Supporting Information *
ABSTRACT: A highly sensitive pressure sensor based on printed organic transistors with three-dimensionally self-organized organic semiconductor microstructures (3D OSCs) was demonstrated. A unique organic transistor with semiconductor channels positioned at the highest summit of printed cylindrical microstructures was achieved simply by printing an organic semiconductor and polymer blend on the plastic substrate without the use of additional etching or replication processes. A combination of the printed organic semiconductor microstructure and an elastomeric top-gate dielectric resulted in a highly sensitive organic field-effect transistor (FET) pressure sensor with a high pressure sensitivity of 1.07 kPa−1 and a rapid response time of
