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Polymorphism of the Blocking TiO Layer Deposited on F:SnO (FTO) and Its Influence on the Interfacial Energetic Alignment Shanting Zhang, Hervé Roussel, Odette Chaix-Pluchery, Michel Langlet, David Muñoz-Rojas, Daniel Bellet, and Andreas Klein
J. Phys. Chem. C, Just Accepted Manuscript • DOI: 10.1021/acs.jpcc.7b04893 • Publication Date (Web): 25 Jul 2017 Downloaded from http://pubs.acs.org on July 26, 2017
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The Journal of Physical Chemistry
Polymorphism of the Blocking TiO2 Layer Deposited on F:SnO2 (FTO) and Its Influence on the Interfacial Energetic Alignment Shan-Ting Zhang,†,‡ Hervé Roussel,† Odette Chaix-Pluchery,† Michel Langlet,† David MuñozRojas,† Daniel Bellet,† and Andreas Klein*,‡ †
‡
Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France
Technische Universität Darmstadt, Jovanka-Bontschits-Strasse 2, 64287 Darmstadt, Germany
ABSTRACT: As widely employed in dye-sensitized, perovskite, and quantum-dot solar cells, the interface between F-doped SnO2 (FTO) and blocking TiO2 (b-TiO2) is essential in understanding the working principles of these types of solar cells. In this work, we have deposited b-TiO2 layers using a simple sol-gel method. While the b-TiO2 layers deposited on Si (100) wafers form pure anatase polymorph, we have found that the rutile structure of the FTO substrates consistently induces the b-TiO2 layers to crystallize into mixed anatase and rutile polymorphs - the same is observed on rutile RuO2 substrates. This indicates that the rutile structural similarity favors the formation of rutile polymorph in b-TiO2 layers; due to the coexistence of both anatase and rutile polymorphs, the interface of FTO/b-TiO2 is essentially inhomogeneous. We also show that the amount of rutile polymorph present in the b-TiO2 layer is a function of layer thickness, with rutile polymorph dominating in thin b-TiO2 layers. As a result, the energetic alignment at the
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FTO/b-TiO2 interface in general still favors the charge transport. This is confirmed by directly probing an ultra-thin (
