Research Article Cite This: ACS Appl. Mater. Interfaces 2019, 11, 19472−19480
www.acsami.org
Microstructured Porous Pyramid-Based Ultrahigh Sensitive Pressure Sensor Insensitive to Strain and Temperature Jun Chang Yang,† Jin-Oh Kim,† Jinwon Oh,† Se Young Kwon,† Joo Yong Sim,‡ Da Won Kim,† Han Byul Choi,† and Steve Park*,† †
Downloaded via BUFFALO STATE on July 17, 2019 at 11:30:40 (UTC). See https://pubs.acs.org/sharingguidelines for options on how to legitimately share published articles.
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea ‡ Bio-Medical IT Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Republic of Korea S Supporting Information *
ABSTRACT: An ultrahigh sensitive capacitive pressure sensor based on a porous pyramid dielectric layer (PPDL) is reported. Compared to that of the conventional pyramid dielectric layer, the sensitivity was drastically increased to 44.5 kPa−1 in the pressure range