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New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap Semiconductors Cheng Wei Shih and Albert Chin* Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan S Supporting Information *

ABSTRACT: At an ultrathin 5 nm, we report a new high-mobility tin oxide (SnO2) metal-oxide-semiconductor field-effect transistor (MOSFET) exhibiting extremely high field-effect mobility values of 279 and 255 cm2/V-s at 145 and 205 °C, respectively. These values are the highest reported mobility values among all wide-band-gap semiconductors of GaN, SiC, and metal-oxide MOSFETs, and they also exceed those of silicon devices at the aforementioned elevated temperatures. For the first time among existing semiconductor transistors, a new device physical phenomenon of a higher mobility value was measured at 45−205 °C than at 25 °C, which is due to the lower optical phonon scattering by the large SnO2 phonon energy. Moreover, the high on-current/off-current of 4 × 106 and the positive threshold voltage of 0.14 V at 25 °C are significantly better than those of a graphene transistor. This wide-band-gap SnO2 MOSFET exhibits high mobility in a 25−205 °C temperature range, a wide operating voltage of 1.5−20 V, and the ability to form on an amorphous substrate, rendering it an ideal candidate for multifunctional low-power integrated circuit (IC), display, and brain-mimicking three-dimensional IC applications. KEYWORDS: field-effect mobility, transistor, SnO2, high temperature, wide energy band gap

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3D IC.1,2 In the current study, we experimentally demonstrated a field-effect mobility (μFE) value of 279 cm2/V-s at an elevated temperature of 145 °C and 5 nm thickness, and this value is the highest among all wide-band-gap single-crystalline GaN3,4 and SiC5,6 semiconductors and noncrystalline metal oxide materials.7−15 This high-temperature mobility value is also superior to that of the widely used small-band-gap silicon (Si) MOSFET, which is typically operated at a >1 MV/cm electric field.16−18 A room temperature mobility of 238 cm2 /V-s was also determined, which is 61% higher than the previously reported mobility because of improved remote phonon scattering.18,19 The higher mobility at 145 °C compared with that at room temperature is due to the lower optical phonon scattering20−24 engendered by the large SnO2 phonon energy rather than the ionized impurity scattering dominating at low temperatures.24,25 Moreover, a high ION/IOFF value of 4 × 106, a low threshold voltage (VT) of 0.14 V, and a low drain voltage (VD) of 1.5 V at 25 °C were measured at an ultrathin body thickness

he search for an ideal transistor has continued for nearly 7 decades, since the invention of the transistor in 1947. An ideal transistor requires a low off-state current (IOFF) to reduce the standby power, a high on-current (ION) to increase the circuit speed, a small turn-on subthreshold slope (SS) to lower the switching power, a low supply voltage for power saving, and a wide temperature operating range. High-temperature operation is crucial for vehicle electronics and microprocessors, for which a raised temperature is the major concern when advanced microprocessors are used for mobile applications. Besides, extra merits for multifunctional display, integrated circuits (ICs), and three-dimensional (3D) IC applications are also required. To reach the above goals simultaneously, highvelocity (mobility) and wide-energy-band-gap materials are pivotal.1 High mobility can increase the transistor’s ION and circuit speed, whereas a wide band gap is essential for lowering the transistor’s IOFF leakage at a high temperature and the quantum-mechanical tunneling current in the sub-10-nm Fin field-effect transistor (FinFET).1 Recently, we reported a high-mobility, ultrathin-body, and wide-band-gap tin oxide (SnO2) metal-oxide-semiconductor field-effect transistor (MOSFET) exhibiting multiple functions for display, a sub-10-nm IC, and an advanced brain-mimicking © XXXX American Chemical Society

Received: April 12, 2016 Accepted: July 21, 2016

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DOI: 10.1021/acsami.6b04332 ACS Appl. Mater. Interfaces XXXX, XXX, XXX−XXX

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ACS Applied Materials & Interfaces of 5 nm. Such large ION/IOFF and positive VT values are significantly better than those of a graphene transistor. Here the ultrathin body thickness required for the sub-10-nm FinFET and the low VD value are crucial for low-power IC operation. Furthermore, the device can be operated at high voltages up to 20 V, which is necessary to drive the liquid crystal for display applications. Therefore, the wide-band-gap SnO2 MOSFET has multiple functions of high mobility from 25 to 205 °C and lowto-high voltage operations for mobile electronics, low-power ICs, and display applications.

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RESULTS AND DISCUSSION One important application for this new material is for thin-film transistor (TFT) and display. The bottom-gate structure has been widely used for TFT. Figure 1 shows the device structure

Figure 1. Schematic device diagram of a bottom-gate SnO2/HfO2/ TaN MOSFET with top aluminum source−drain contacts.

used in the experiment. A high-dielectric-constant (high-κ) gate insulator26−30 was used to increase ION and reduce the operating voltage. To lower the remote phonon scattering,18,19 an ultrathin 1.5 nm SiO2 was inserted between the gate dielectric and SnO2 channel.27,28 Moreover, a 3 nm high-κ Al2O3 dielectric was added near the SnO2 channel to tune the flat band voltage and increase VT.28 For high-frequency applications, the parasitic capacitances should be minimized31−34 and a top-gate structure with a small submicrometer gate length should be used. To evaluate the quality of the stacked SiO2/Al2O3/HfO2 gate dielectric, control Al/[SiO2/Al2O3/HfO2]/TaN metal/insulator/metal (MIM) capacitors were fabricated along with the SnO2 MOSFET. Figure 2A displays the measured current density−voltage (J−V) and capacitance−voltage (C−V) characteristics of the MIM capacitors. A high capacitance density of 0.29 μF/cm2 was measured at 100 kHz with a low leakage current of 1.1 × 10−6 A/cm2 at 2 V, which yielded a low equivalent-oxide thickness of 11.9 nm. Figure 2B shows the drain current−gate voltage (ID−VG), μFE−VG, and linear ID1/2− VD characteristics of the metal-gate/high-κ/SnO2 MOSFET with an ultrathin 5 nm SnO2 thickness. At a low VD of 1.5 V, the device demonstrated favorable characteristics. The gate C− V is plotted in Figure S1. In addition to the shift of the flat band voltage, the gate C−V curves only show accumulation capacitance. This is because of the n-type nature of the metal oxide channel. The large ION/IOFF and positive VT values are much better than those of a graphene transistor. Furthermore, an extremely high μFE of 238 cm2/V-s, extracted from the

Figure 2. (A) J−V and C−V characteristics of a Al/HfO2/TaN capacitor, (B) ID−VG, μFE−VG and ID1/2−VG characteristics, and (C) ID−VD characteristics of Al/SnO2/HfO2/TaN MOSFETs. The gate length is 50 μm.

maximum transconductance (gm), was obtained at a low VG of 1.5 V. This μFE value is higher than that of the single-crystalline GaN3,4 and SiC5,6 and the noncrystalline metal oxides7−15 and comparable with that of the small-band-gap Si MOSFET operated at a typical >1 MV/cm electric field.16−18 The highmobility SnO2 MOSFET was constructed on amorphous SiO2, which is an ideal candidate for 3D brain-mimicking ICs.1 The high mobility and high ION were crucial for driving the organic light-emitting diodes and increasing the display pixel density. The extremely high μFE at low VG and VD enabled operation of this device at a low voltage of 1.5 V for low-power applications. Figure 2C illustrates the transistor’s ID−VD characteristics of the metal-gate/high-κ/SnO2 MOSFET. The ID data at 145 °C are higher than those at 25 °C to give the higher mobility. This device can also operate at 20 V, which is sufficiently high to drive the liquid crystal for display applications. Figure 3A shows the ID, |IG|, and |IS| characteristics versus VG. Although |IG| at VG < −0.9 V is 1 order of magnitude lower than ID, it may have a slight effect on |IS|. To further lower the B

DOI: 10.1021/acsami.6b04332 ACS Appl. Mater. Interfaces XXXX, XXX, XXX−XXX

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ACS Applied Materials & Interfaces

Figure 3. (A) ID−VG, |IG|−VG, and |IS|−VG characteristics of Al/SnO2/ HfO2/TaN MOSFET with 40 nm thick HfO2 and (B) ID−VG and | IG|−VG characteristics of Al/SnO2/HfO2/TaN MOSFETs with 40and 50-nm-thick HfO2. The devices were measured at VD = 0.1 V. The gate length is 50 μm.

IG leakage, the device was made with a thicker 50 nm HfO2 gate dielectric. As shown in Figure 3B, |IG| at VG < −1.0 V is 2 orders of magnitude lower than ID. The devices have SS values of 121 and 105 mV/dec and ION/IOFF values of 4 × 106 and 6 × 106 for 40- and 50-nm-thick HfO2 gate dielectric devices, respectively. The transistor’s high-temperature characteristics are crucial for vehicle electronics and microprocessors, for which the detrimental effect of chip heating on the performance in advanced microprocessors is a critical concern. Parts A and B of Figure 4 display the ID−VG and μFE−VG characteristics of metal-gate/high-κ/SnO2 MOSFETs, respectively, at temperatures ranging from 25 to 205 °C at steps of 20 °C. The IOFF value increased monotonically with the temperature, which is attributable to the increased leakage caused by thermally generated electrons at high temperatures. Note that the onresistance (RON) of ID−VD characteristics is larger than submicrometer Si MOSFETs. Yet RON depends strongly on the gate length (LG), width (WG), capacitor (C0), and mobility (μ): R ON = LG /[WGμC0(VG − VT)]

Figure 4. (A) ID−VG and (B) μFE−VG characteristics of the SnO2 MOSFET devices under various temperatures. (C) Measured and modeled temperature-dependent mobility data of the SnO2 MOSFETs at fixed VG − VT = 0.9 V.

off trend at higher temperatures; this trend differs substantially from the continuously decreasing trend of the Si and GaN MOSFETs. At 145 °C, we measured a μFE value of 279 cm2/Vs and an ION/IOFF value of 1.5 × 105, which are the most favorable results among all wide-band-gap semiconductors3−15 and are also superior to those of the Si MOSFET.16−18 Even at 205 °C, a μFE value of 255 cm2/V-s was obtained, which is the highest reported value at this high temperature. We further plotted the peak mobility as a function of the temperature. The peak μFE increased from 238 cm2/V-s at 25 °C to 279 cm2/V-s at 145 °C and decreased to 255 cm2/V-s when the temperature increased to 205 °C (Figure 4C). The shift of the mobility curve at higher temperature is due to a VT change, and the peak mobility value, governed by both ionized impurity and optical phonon scattering, also changes with the temperature. For the first time among existing semiconductor transistors, a higher mobility was measured at 45−205 °C rather than at 25 °C. To understand such an unusual temperature dependence on μFE, we further theoretically analyzed the mobility in a wide temperature range. Ionized impurity scattering is the dominant mechanism of mobility at low temperatures.24,25 The ionized impurity scattering mobility (μii) in a two-dimensional (2D) electron channel can be expressed as36

(1)

After normalized RON (RON,nor) to the gate dimension and capacitor, the measured RON,nor of this SnO2 device is lower than that of an InGaZnO TFT14 and close to that of a singlecrystal Si MOSFET.29 This is because RON,nor is inversely proportional to the mobility. The major series resistance for the bottom-gate device is the source and drain contact resistance, which can be further lowered by using low work-function ohmic contact material.35 Moreover, the μFE value increased with the VG value, peaked, and then decreased as the VG value continued to increase. The increasing mobility at low VG is due to ionized impurity scattering; the decreasing mobility after reaching the peak value is mainly due to phonon scattering.24 This is a typical trend for gm in a MOSFET, in which μFE is derived directly from gm. However, the ION and peak μFE values initially increased with the temperature and exhibited a rollingC

DOI: 10.1021/acsami.6b04332 ACS Appl. Mater. Interfaces XXXX, XXX, XXX−XXX

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ACS Applied Materials & Interfaces μii = αT1.0

Table 1. Optical Phonon Energy of Wide-Band-Gap GaN, SiC, and SnO2 and Small-Band-Gap Si

(2)

where α is the proportional constant. This temperature dependence on ionized impurity scattering has been used for inversion mobility simulation for Si MOSFET and IC design.36 The other major scattering mechanism for polar compound semiconductors such as III−V and II−VI materials is optical phonon scattering (μop),20−23 which was derived by Petritz and Scanlon:21 ⎛ m ⎞3/2 χ (Z0) [exp(Z0) − 1] μop = β⎜ e ⎟ ⎝ m* ⎠ Z 1/2 0

optical phonon energy (meV) GaN 4H-SiC 3C-SiC

87 104 103

6H-SiC SnO2 Si

104 102 63

room temperature mobility comparable with that of GaN MOSFET5 for high-frequency application and orders of magnitude lower IOFF and direct-current power consumption than graphene.

(3)

where β is a constant, Z0 equals Θ/T, Θ equals ℏωl/k = Eop/k, ωl is the angular frequency of a longitudinal optical phonon, Eop is the optical phonon energy, and χ(Z0) is a quantity defined by Howarth and Sondheimer.22 Because the measured temperature-dependent 2D electron gas mobility of AlGaAs/GaAs HEMT showed an exponential dependence of exp(Θ/T),37 the above exp(Eop/kT) dependence is still valid for optical phonon scattering.20 Because of its exponential temperature dependence, the optical phonon scattering mechanism dominates at high temperatures. The total mobility (μtot) is expressed as follows: 1/μtot = 1/μii + 1/μop

optical phonon energy (meV)

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CONCLUSIONS Record-high μFE values of 279 and 255 cm2/V-s were achieved at 145 and 205 °C, respectively; these values represent the most favorable results among all of the wide-band-gap semiconductors of GaN, SiC, and metal-oxide MOSFETs. Moreover, a high device performance of an ION/IOFF value of 1.5 × 105 was measured at 145 °C. The higher mobility of the SnO2 MOSFET at 145 °C than at 25 °C is attributable to the low optical phonon scattering rate and high phonon energy value. This new material transistor has a high mobility at temperatures ranging from 25 to 205 °C, a wide voltage operation from 1.5 to 20 V, and the unique ability to form on an amorphous substrate, rendering it an ideal candidate for multifunctional low-power IC, display, and 3D IC applications.

(4)

The surface roughness scattering was not considered because the peak mobility is dominated by ionized impurity and optical phonon scatterings but not surface roughness scattering at very high VG.24,36 Although remote phonon scattering has a strong effect in high-κ/Si MOSFET,19 it was not considered because of the extra SiO2 interfacial layer to reduce this scattering effect. As shown in Figure S2, the mobility is much improved by the extra SiO2 interfacial layer. Figure 4C illustrates plots of the modeled data for comparison, indicating excellent agreement between the measured and modeled mobility. The increase in the mobility at temperatures ranging from 25 to 145 °C is attributable to the reduction in ionized impurity scattering, in which the mobility exhibits a T1 dependence.36 At temperatures exceeding 145 °C, the mobility decreased as the temperature increased because of increased optical phonon scattering, demonstrating an exp(Eop/kT) dependence. The temperaturedependent mobility is not due to the surface effect. As shown in Figure S3A,B, a similar temperature dependence was also observed after device passivation by HfO2, although a slightly higher ION was measured. Therefore, these effects are intrinsic and not due to surface properties.38 Understanding why μFE peaked at an elevated temperature of 145 °C for the SnO2 MOSFET rather than continuously decreasing with the temperature, as observed in the Si and GaN MOSFETs, is imperative. For the Si MOSFET, the room temperature mobility was limited by acoustic phonon scattering and differed from optical phonon scattering of the SnO2 MOSFET. Using the GaN MOSFET or HEMT device facilitated excitation of phonons for scattering because the Eop value was only 87 meV and substantially lower than the 102-meV phonon energy in the SnO2 MOSFET shown in Table 1. Although SnO2 and SiC MOSFETs demonstrate similar phonon energy levels, the μop value of SiC MOSFET is limited by the considerably higher effective mass of such devices compared with that of a SnO2 MOSFET. Therefore, the record high-temperature mobility of the SnO2 MOSFET observed in this study is due to its higher phonon energy and lower effective mass. The SnO2 device has

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ASSOCIATED CONTENT

* Supporting Information S

The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsami.6b04332. Experimental methods and plots (PDF)

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AUTHOR INFORMATION

Corresponding Author

*E-mail: [email protected]. Author Contributions

The manuscript was written through contributions of all authors. All authors have given approval to the final version of the manuscript. Notes

The authors declare no competing financial interest.

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ACKNOWLEDGMENTS This paper’s publication was supported, in part, by the Ministry of Science and Technology of Taiwan. REFERENCES

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DOI: 10.1021/acsami.6b04332 ACS Appl. Mater. Interfaces XXXX, XXX, XXX−XXX