Nonradiating Silicon Nanoantenna Metasurfaces as Narrow-band

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Nonradiating Silicon Nanoantenna Metasurfaces as Narrow-band Absorbers Chi-Yin Yang, Jhen-Hong Yang, Zih-Ying Yang, Zhong-Xing Zhou, Mao-Guo Sun, Viktoriia E. Babicheva, and Kuo-Ping Chen ACS Photonics, Just Accepted Manuscript • DOI: 10.1021/acsphotonics.7b01186 • Publication Date (Web): 24 Jan 2018 Downloaded from http://pubs.acs.org on January 24, 2018

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Nonradiating Silicon Nanoantenna Metasurfaces as Narrowband Absorbers Chi-Yin Yang,1 Jhen-Hong Yang,2 Zih-Ying Yang,3 Zhong-Xing Zhou,2 Mao-Guo Sun,1 Viktoriia E. Babicheva,4 and Kuo-Ping Chen1,* 1

Institute of Imaging and Biomedical Photonics, National Chiao Tung University, 301 Gaofa 3rd Road, Tainan 711, Taiwan

2

Institute of Photonic System, National Chiao Tung University, 301 Gaofa 3rd Road, Tainan 711, Taiwan

3

Institute of Lighting and Energy Photonics, National Chiao Tung University, 301 Gaofa 3rd Road, Tainan 711, Taiwan 4

ITMO University, 49 Kronverksky Ave., St. Petersburg, 197101, Russia

ABSTRACT: High-refractive-index (HRI) nanostructures support optically induced electric dipole (ED) and magnetic dipole (MD) modes that can be used to control scattering and achieve narrowband absorption. In this work, a high absorptance device is proposed and realized by using amorphous silicon nanoantenna arrays (a-Si NA arrays) that suppress backward and forward scattering with engineered structures and in particular periods. The overlap of ED and MD resonances, by designing an array with a specific period and exciting lattice resonances, is experimentally demonstrated. The absorptance of a-Si NA arrays increases 3-fold in the near-infrared (NIR) range in comparison to unpatterned silicon films. Nonradiating a-Si NA arrays can achieve high absorptance with a small resonance bandwidth (Q = 11.89) at wavelength 785 nm. The effect is observed not only due to the intrinsic loss of material but by overlapping the ED and MD resonances.

Keywords: High-refractive-index (HRI); Dielectric nanoantennas; Metasurfaces; Absorber

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Narrowband absorbers with high absorption efficiency and high quality factor have gained great attention in recent years, which could be potentially applied in sensors, thermal emitters, and thermophotovoltaics.1-6 In literatures, narrowband absorbers have been realized by metal-oxide-metal configuration,1-4 bilayer-nanostructure,5 and Tamm plasmon polaritons,6-8 which are based on the energy confinement in the metals or at the metal-oxide interface. For the plasmonic narrowband absorbers, the noble metal, like gold or silver, are usually utilized to provide the localized electric fields resonance. In literatures, plasmonic absorbers could provide high absorbance ( > 90 %).3, 9 However, the low melting points make noble metals unsuitable for applications with high temperature and strong light illumination, such as thermal radiation, thermophotovoltaics, or heat-assisted magnetic recording. To overcome the disadvantages of metallic absorber, high-refractive-index (HRI) dielectric metasurfaces have attracted a lot of attention recently due to their advantages of low non-radiative losses and high melting temperatures. Silicon is one of feasible HRI materials that has been widely used in nanophotonics, in applications such as solar cells,10, 11 photonic waveguides,12, 13 semiconductor detectors,14 color filter,15 and metasurfaces.16 In HRI dielectric nanostructure, electric dipole (ED) and magnetic dipole (MD) resonances have been studied because of the large scattering signals, including directional forward and backward scattering.17-24 Controlling the directional scattering and enhancing the absorption of silicon nanostructure have recently attracted attention, and the topics of particular interest and potential for successful applications include the cancellation of scattering in the predefined direction and anapole resonance.20, 21, 25, 26 When the intensities of electric and toroidal dipoles are equal in magnitude and out of phase, the energy of scattering in silicon nanostructures would be transferred to absorption because of the destructive interference between ED and toroidal dipole; therefore, the absorption would be enhanced and the scattering would decrease, which is also called anapole. The scattering signals of anapole mode have been already investigated by the dark-field microscopy and near-field scanning optical microscopy in the literature.25, 27 However, the anapole mode is usually discussed in the single particle resonance. Therefore, it would be difficult to apply the anapole resonance in dense arrays or in large area samples. Large area random silicon nanophotonic metasurfaces with polarization independent absorption has been proposed recently, but the device requires prism coupling and total internal reflection, which might limit the application.28 Therefore, in our study, the silicon nanoantenna array with high filling factor is proposed to achieve high absorption efficiency and break the limit of anapole mode. In this work, the design of high-efficiency narrowband absorbers is proposed by applying the Kerker effect and amorphous silicon nanoantenna (a-Si NA arrays) lattice resonance mode.29, 30 The destructive interference between ED and MD will result in scattering cancellation in the backward direction – so-called Kerker effect - when the magnitude and phase of ED and MD are equal to each other (i.e., the first Kerker’s condition), and in most cases it is achieved when ED and MD resonances are at the same or close wavelength. This phenomenon has been widely discussed in core-shell and HRI nanoparticles to produce cancellation of scattering in the certain direction.31-33 The theoretical prediction of magnetic and electric dipole resonances of silicon nanoparticles and a realization of directional light scattering due to the Kerker effect is firstly proposed in 2010, and verified experimentally in 2012.22, 34 There are a couple of ways to realize the spectral overlap of electric and magnetic multipole resonances. One is by controlling the shapes of dielectric nanoparticles.23, 24 The other is by arranging the periodic arrays. ED and MD will experience lattice resonances, which are excited at the wavelength close to the period of the structure.34-36 Recently, it has been theoretically proposed to control the position of ED resonance and to overlap it with the MD resonance by adjusting periods of the lattice.37 As has been reported in the literature,26, 28, 38, 39 for a lossless material, when the backward scattering decreases, it is accompanied by an increase in forward scattering. In order to create the perfect absorber, it is necessary to avoid the increasing of forward scattering (i.e., increasing of transmittance). Therefore, amorphous silicon is chosen as the material which has moderate loss to suppress the forward scattering and absorb the energy inside a-Si NA arrays as shown in Figure 1. In this study, the narrowband absorber of a-Si NA arrays with effectively varying the resonance wavelength of ED and MD is experimentally demonstrated. By controlling the periods of NA arrays, absorption enhancement can be achieved by overlapping the ED and MD resonances. Then, the effect of material loss (refractive index imaginary part) is discussed to distinguish the difference in unidirectional scattering and nonradiating device. It is concluded that utilizing amorphous silicon makes it possible to increase the absorptance in comparison to unpatterned silicon films and crystalline silicon nanoantenna arrays (c-Si NA arrays) when ED and MD resonance overlap.

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Figure 1 Schematic diagram of silicon narrowband absorber. Directional scattering from single nanoparticle and near-unit transmission from the nanoparticle array take place in the effectively lossless structure. In contrast, lossy structure causes the dip in transmittance.

Figure 2 Simulated silicon narrowband absorber (a) reflectance (b) transmittance and (c) absorptance spectra with different transverse periods (Py). The a-Si NA arrays are set on a glass substrate (n = 1.52), the surrounding medium is immersion oil (n = 1.516). The width of square a-Si NAs is 155 nm, the thickness is 142 nm, the longitudinal period (Px) is 400 nm. Here, EDLR is the electric dipole lattice resonance.

Simulation and Experimental Results The finite-difference time-domain (FDTD) simulation has been used to calculate the reflectance, transmittance, and absorptance spectra of a-Si NA arrays. The calculation is performed using Lumerical, a commercially available FDTD simulation software package. In the modeling, a-Si NA arrays are on the glass substrate (n = 1.52) with x-polarized light normally incidents from the substrate and the surrounding medium is immersion oil (n = 1.516). The width of square a-Si NAs is 155 nm and the thickness is 142 nm. From the simulation results in Figure 2, by fixing the longitudinal period (Px) at 400 nm and tuning the transverse period (Py), the ED lattice resonance wavelength would be modified significantly, but the resonance wavelength of MD changes slowly.37 The ED and MD resonance modes could be distinguished by Mie theory and also by observing the E-fields distributions inside the nanoantenna. When ED lattice resonance and MD are overlapping, the backward scat-


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tering would be suppressed because of the destructive interference of light scattered by ED and MD. This phenomenon has been first proposed by M. Kerker in 1983 (so-called Kerker effect) and can also be observed in Figure 2 (a) when the period is around 480 nm.30 The suppression of backward scattering is presented by the decrease in reflectance. However, the energy of backward scattering was not transferred into forward scattering (transmission) but be absorbed because of the intrinsic loss of amorphous silicon and localized electric fields,40-42 then resulting in high absorptance.

Figure 3 The SEM images, optical images, and the measured (solid line) results of reflectance (black line) and transmittance (red line) spectra with different transverse periods (a) Py = 380 nm (b) Py = 480 nm (c) Py = 580 nm. The inset optical images are transmission images with a bandpass filter: 785 ± 10 nm.

In the experiment, a-Si NA arrays with three different transverse periods (Py) were fabricated on glass substrates. By changing the Py, the resonance wavelength of ED would be shifted to satisfy the following conditions: (i) the resonance wavelength of ED is shorter than that of MD (Py = 380 nm), (ii) the resonance wavelength of ED and MD are overlapped (Py = 480 nm), (iii) the resonance wavelength of ED is longer than that of MD (Py = 580 nm). Conditions (i), (ii) and (iii) are shown in Figures 3 (a), 3 (b) and 3 (c) respectively. The scanning electron microscopy (SEM) images, transmission images (with a bandpass filter: 785 ± 10 nm) and the measured results are shown in Figure 3. In Figure 3(a), it can be observed that at Py = 380 nm, ED and MD resonances are separate and show two transmittance dips in the spectra. In Figure 3 (b), ED and MD resonances are overlapped when Py is 480 nm. Due to destructive interference of ED and MD resonance, the backward scattering decreases, which can be observed in the reflectance spectrum. Furthermore, because losses in amorphous silicon are higher than in crystalline silicon,40-42 different from the results in the literature that using crystalline silicon for enhancing the forward scattering,21, 26 amorphous silicon will result in low forward scattering.28, 38, 39 In other words, the a-Si NA arrays result in both low transmittance and reflectance at the resonance wavelength when ED and MD are overlapped. In Figure 3 (c), if the Py continues to increase, without the overlaps of ED and MD resonances, the absorptance will decrease. Figure 3 shows a good match between the measurement results and the simulation results. The electric field distribution of a-Si NAs with x-polarized light incidents from the glass substrate are shown in Figure 4. When ED and MD resonances overlap, the intensity of reflected light and transmitted light are both reduced, and the energy is confined with much stronger electric field enhancement gathering around the a-Si NAs. Comparing Figures 4 (a) and 4 (b), the superposition of electric field distributions inside the particle of each ED and MD would be similar to ED and MD overlapping, which means the phenomenon is linear.


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Figure 4 Electric field distributions of (a) non-overlapping and (b) overlapping. The electric field distribution of ED and MD resonances which shown in (a) are related to condition (i) (Py = 380 nm), and (b) are related to condition (ii) (Py = 480 nm).

The Effect of Material Loss

Figure 5 Comparison of the reflectance (black line), transmittance (red line) and absorptance (blue) spectra versus different refractive index imaginary part of HRI material from k = 0 to 0.3 at the wavelength = 785 nm, the real part of refractive index is set as 4.22. (a) Normalized spectra of HRI NA arrays, (b) Normalized spectra of HRI films, (c) Total power dissipation density distributions for the cases with different imaginary part of refractive index (k).

To discuss the intrinsic loss effect of the materials, in Figure 5, the Si NA arrays and Si films (thickness = 142 nm) are simulated and compared for the cases with different imaginary part (k) of the refractive index. As mentioned from the


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previous discussion, the energy of backward scattering would be transferred to forward scattering for a lossless (low k) particle, and it can be confirmed by Figure 5 (a). However, when k is getting larger, the energy of forward scattering can be stored inside the Si NAs behaving like a cavity resonance instead of being scattered out, which results in low transmittance and high absorptance in high k area shown in Figure 5 (a). The phenomenon which has been discussed above can also be observed in the electric field distributions shown in Figure 5 (c). Therefore, because of possessing lower reflectance and transmittance, using Si NA arrays can have around 4 times higher absorptance than a-Si thin films (Figure 5 (b)) when k ~ 0.15. Comparing with other surface texturing methods, such as KOH wet etching, Si NA arrays can be made by a-Si thin films, but KOH wet etching can only be applied on single crystalline silicon. Conclusions

Figure 6 Comparison of the absorptance spectra of a-Si NA arrays (blue solid line), c-Si NA arrays (blue dashed line), a-Si films (light gray area), and c-Si films (gray area). In order to compare the absorptance of a-Si and c-Si NA arrays, the width of square a-Si NAs is set as 155 nm with the thickness = 142 nm. Because the real parts of refractive index in a-Si and c-Si are different, the width of square c-Si NAs is set as 175 nm with the thickness = 175 nm. The longitudinal periods (Px) of a-Si and c-Si NA arrays are both 400 nm, and the transverse periods (Py) are both 480 nm. Comparing these two cases, the absorptance of a-Si NA arrays is significantly larger than c-Si NA arrays. The detailed simulation results are shown in Figure S4.

The high quality factor absorption resonance has been demonstrated by overlapping ED and MD in this paper. It is worth noting that the strong absorption resonance is achieved not only due to the intrinsic loss of material, but also due to the overlaps between ED and MD resonances for the proposed a-Si NAs. The strong localized electric fields inside the a-Si nanostructure cause the absorption enhancement. In addition, we also investigated the relation between the intrinsic material loss and optical responses by comparing the spectra for both a-Si and c-Si NA arrays. As shown in Figure 6, the a-Si NAs arrays show a higher absorptance than the following cases: c-Si NA arrays, a-Si and cSi films, especially in near-infrared wavelength range (700 - 1000 nm). The material loss as well as reflectance (R), transmittance (T), and absorptance (A) of NAs using both amorphous Si and crystalline Si are compared in Table 1. By observing T and A, crystalline silicon can be designed as a unidirectional scattering device because of the high transmittance caused by the low material intrinsic loss;26 but amorphous silicon can be used to effectively suppress both backward and forward scattering, and achieve high absorption. The all-dielectric narrowband absorber shows higher Qfactor than plasmonic absorbers,3 and the device can be further applied to selective narrowband thermal emitters, optical filters, and sensors. Table 1. Comparison of the material intrinsic loss and optical response of a-Si and c-Si NA arrays at the wavelength 785 nm. R is reflectance, T is transmittance, and A is absorptance λ = 785 nm

k

R

T

A

Amorphous Si

0.25

0.16

0.01

0.83


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Crystalline Si

0.006

0.03

0.86

0.11

EXPERIMENTAL METHOD Fabrication. In the fabrication process, the amorphous silicon films are deposited on the glass substrate by using the RF sputter. The refractive index and thickness of deposited films are characterized by the spectroscopic ellipsometry apparatus (SENTECH SENDIR). In nanofabrication, the photoresist (PMMA A4) is coated and exposed by electron-beam lithography (ELIONIX, ELS-7500 EX). The 20-nm chromium film is deposited as an etching mask by E-gun evaporator (ULVAC, VT1-10CE). Finally, ICP etcher (ELIONIX, EIS-700) with etching gas SF6 and C4F8 is used to produce the a-Si NA arrays. The etching mask will be removed by Cr etchant and covered by immersion oil (n = 1.516) after the etching process.

ASSOCIATED CONTENT Supporting Information.

AUTHOR INFORMATION Corresponding Author *E-mail: [email protected]

ACKNOWLEDGMENT This work was supported by the Ministry of Science and Technology (MOST), Taiwan, ROC (MOST 104-2221-E-009-130-MY3; MOST 105-2221-E-009-096-MY2)

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Figure 1 Schematic diagram of silicon narrowband absorber. Directional scattering from single nanoparticle and near-unit transmission from the nanoparticle array take place in the effectively lossless structure. In contrast, lossy structure causes the dip in transmittance. 177x65mm (300 x 300 DPI)


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Figure 2 Simulated silicon narrowband absorber (a) reflectance (b) transmittance and (c) absorptance spectra with different transverse periods (Py). The a-Si NA arrays are set on a glass substrate (n = 1.52), the surrounding medium is immersion oil (n = 1.516). The width of square a-Si NAs is 155 nm, the thickness is 142 nm, the longitudinal period (Px) is 400 nm. Here, EDLR is the electric dipole lattice resonance. 177x60mm (300 x 300 DPI)


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ACS Photonics

Figure 3 The SEM images, optical images, and the measured (solid line) results of reflectance (black line) and transmittance (red line) spectra with different transverse periods (a) Py = 380 nm (b) Py = 480 nm (c) Py = 580 nm. The inset optical images are transmission images with a bandpass filter: 785 ± 10 nm. 177x77mm (300 x 300 DPI)


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Figure 4 Electric field distributions of (a) non-overlapping and (b) overlapping. The electric field distribution of ED and MD resonances which shown in (a) are related to condition (i) (Py = 380 nm), and (b) are related to condition (ii) (Py = 480 nm). 82x75mm (300 x 300 DPI)


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ACS Photonics

Figure 5 Comparison of the reflectance (black line), transmittance (red line) and absorptance (blue) spectra versus different refractive index imaginary part of HRI material from k = 0 to 0.3 at the wavelength = 785 nm, the real part of refractive index is set as 4.22. (a) Normalized spectra of HRI NA arrays, (b) Normalized spectra of HRI films, (c) Total power dissipation density distributions for the cases with different imaginary part of refractive index (k). 177x99mm (300 x 300 DPI)


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Figure 6 Comparison of the absorptance spectra of a-Si NA arrays (blue solid line), c-Si NA arrays (blue dashed line), a-Si films (light gray area), and c-Si films (gray area). In order to compare the absorptance of a-Si and c-Si NA arrays, the width of square a-Si NAs is set as 155 nm with the thickness = 142 nm. Because the real parts of refractive index in a-Si and c-Si are different, the width of square c-Si NAs is set as 175 nm with the thickness = 175 nm. The longitudinal periods (Px) of a-Si and c-Si NA arrays are both 400 nm, and the transverse periods (Py) are both 480 nm. Comparing these two cases, the absorptance of a-Si NA arrays is significantly larger than c-Si NA arrays. The detailed simulation results are shown in Figure S4. 90x70mm (300 x 300 DPI)


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Nonradiating Silicon Nanoantenna Metasurfaces as Narrow-band

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