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Nonvolatile Control of the Electronic Properties of In CrO Semiconductor Films by Ferroelectric Polarization Charge Meng Xu, Jian-Min Yan, Lei Guo, Hui Wang, Zhi-Xue Xu, Ming-Yuan Yan, Yunlong Lu, Guan-Yin Gao, Xiao-Guang Li, Hao-Su Luo, Yang Chai, and Ren-Kui Zheng ACS Appl. Mater. Interfaces, Just Accepted Manuscript • DOI: 10.1021/acsami.9b07967 • Publication Date (Web): 13 Aug 2019 Downloaded from pubs.acs.org on August 13, 2019
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ACS Applied Materials & Interfaces
Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge Meng Xu,†,‡, Jian-Min Yan,†, Lei Guo,† Hui Wang,# Zhi-Xue Xu,† Ming-Yuan Yan,† Yun-Long Lu,& Guan-Yin Gao,*,⊥ Xiao-Guang Li,⊥ Hao-Su Luo,† Yang Chai,§ and Ren-Kui Zheng*,†,# †
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China ‡
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China #
School of Materials Science and Engineering and Jiangxi Key Laboratory for TwoDimensional Materials and Devices, Nanchang University, Nanchang 330031, China, &
Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo, 315211, China
⊥ Hefei
National Laboratory for Physical Sciences at the Microscale, Department of Physics, and Collaborative Innovation Center of Advanced Microstructures, University of Science and Technology of China, Hefei 230026, China §
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong
Abstract: A series of Cr-doped In2-xCrxO3 (ICO) semiconductor thin films were epitaxially grown on (111)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29PT) single-crystal substrates by the pulsed laser deposition. Upon the application of an electric field to the PMN0.29PT substrate along the thickness direction we realized in situ, reversible, and nonvolatile control of the electronic properties and Fermi level of the films, which are manifested by abundant physical phenomena such as the n-type to p-type transformation, metalsemiconductor transition (MST), metal-insulator transition (MIT), crossover of the magnetoresistance (MR) from negative to positive, and a large nonvolatile on-and-off ratio of 5.5×104% at room temperature. We also strictly disclose that both the sign and the magnitude of MR are determined by the electron carrier density of ICO films, which could modify the s−d exchange interaction and weak localization effect. Our results demonstrate that the ferroelectric 1
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gating approach using PMN-PT can be utilized to gain deeper insight into the carrier-densityrelated electronic properties of In2O3-based semiconductors and provide a simple and energy efficient way to construct multifunctional devices which can utilize the unique properties of composite materials. KEYWORDS: Ferroelectric field effect, Ferroelectric single crystal, Electronic properties, Wide-band-gap oxide semiconductors films, Magnetoresistance
1. INTRODUCTION Ferroelectrics-based heterostructures where two stable polarization states −P and +P form nonvolatile storage states have attracted much attention for their extensive applications in the information storage fields.1-4 Over the past few years, ferroelectric random access memory (FRAM) with the advantages of fast reading, nonvolatility and low power consumption has been widely used in memory industry.5,6 However, FRAM is destructive reading, which puts forward very strict requirements on the anti-fatigue performance of ferroelectric thin films.7,8 Also based on ferroelectric materials, ferroelectric field effect transistors (FeFETs) have been increasingly popular as they overcome the disadvantage of destructive reading.9-14 One of the most feasible and simple approaches to construct FeFETs is the integration of functional thin films with ferroelectric (FE) single crystals. Electronic properties of such FeFETs could be tune and modulated in a large scale by applying an electric field to FE substrates. Among numerous ferroelectrics, (1-x)PbMg1/3Nb2/3O3-xPbTiO3 (PMN-xPT) single crystals with compositions near the morphotropic phase boundary (0.29≤x≤0.33) have been widely used to grow thin films due to their large ferroelectric polarization ( 𝑃𝑃𝑟𝑟 ∼30-40 μC/cm2), superior piezoelectric
coefficient (d33~2000 pC/N) and ultralow leakage current (
