3 Jun 2015 - Phase-change random access memories. (PCRAMs) exploiting the dramatic dif- ference of electrical resistance in a reversible phase transit...
Jun 3, 2015 - Phase-change random access memories. (PCRAMs) exploiting the dramatic dif- ference of electrical resistance in a reversible phase transition of chalcogenide- based materials between amorphous (high- resistance) and crystalline (low-resi
Jun 3, 2015 - Ge2Sb2Te5-based phase-change memories (PCMs), which undergo fast and reversible switching between amorphous and crystalline structural transformation, are being utilized for nonvolatile data storage. However, a critical obstacle is the
Jul 13, 2018 - â School of Electrical Engineering, â¡Department of Semiconductor Systems Engineering, and â¥School of Mechanical Engineering, ... The proposed CF-MIS contact achieves ultralow specific contact resistivity, exhibiting up to ...
May 24, 2018 - analog synapse in a crossbar structure of perpendicular pre- and postsynaptic neurons. An ideal fully automated, large- scale artificial neural ...
*E-mail (D. Berco): [email protected]., *E-mail (D. S. Ang): ... Alternatively, a plurality of these artificial connexons may be used to create a synthetic ...
Neuron-Inspired Fe3O4/Conductive Carbon Filament Network for Highly ... a State Key Laboratory of Organic-Inorganic Composites, College of Materials ...
May 8, 2018 - Construction of a continuous conductance network with fast electron transfer ... The Fe3O4-based conductive network provides a new idea for ...
2 days ago - Construction of a continuous conductance network with fast electron transfer rate is extremely important for high performance energy storage. Owing to the highly efficient mass transport and information transmission, neurons are exactly
Jul 13, 2018 - This universal and innovative technique, CF-MIS contact, forming the CFs to provide a quantity of electron paths as well as tuning SBH of ...
3 Jun 2015 - Phase-change random access memories. (PCRAMs) exploiting the dramatic dif- ference of electrical resistance in a reversible phase transition ...