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Functional Inorganic Materials and Devices
Trap-assisted enhanced bias illumination stability of oxide thin film transistor by praseodymium doping Hua Xu, Miao Xu, Min Li, ZiKai Chen, Jianhua Zou, Weijing Wu, Xianfeng Qiao, Hong Tao, Lei Wang, Honglong Ning, Dongge Ma, and Junbiao Peng ACS Appl. Mater. Interfaces, Just Accepted Manuscript • DOI: 10.1021/acsami.8b18329 • Publication Date (Web): 14 Jan 2019 Downloaded from http://pubs.acs.org on January 16, 2019
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ACS Applied Materials & Interfaces
Trap-assisted enhanced bias illumination stability of oxide thin film transistor by praseodymium doping Hua Xu,ab Miao Xu, *ab Min Li,b Zikai Chen,b Jianhua Zou,b Weijing Wu,a Xianfeng Qiao,a Hong Tao,b Lei Wang,ab Honglong Ning,a Dongge Maa and Junbiao Peng *a a
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. b Guangzhou New Vision Optoelectronic Co., Ltd. Guangzhou 510530, China. *Corresponding author: E-mail:
[email protected];
[email protected] Abstract: Praseodymium-doped indium zinc oxide (PrIZO) have been employed as the channel layer of thin film transistors (TFTs). The TFTs with Pr doping exhibited a remarkable suppression of the light induced instability. A negligible photo-response and remarkable enhancement in negative gate bias stress under illumination (NBIS) were achieved in the PrIZO-TFTs. Meanwhile, the PrIZO-TFTs showed reasonable characteristics with a high field effect mobility of 26.3 cm2/Vs, SS value of 0.28 V/decade, and Ion/Ioff ratio of 108. X-ray photoelectron spectroscopy (XPS), microwave photoconductivity decay (Micro-PCD) and photoluminescence spectra (PL) were employed to analyze the effects of the Pr concentrations on the performance of PrIZO-TFTs. We disclosed that acceptor-like trap states induced by Pr ions might lead to the suppression of photo-induced carrier in conduction band, which is a new strategy for improving illumination stability of amorphous oxide semiconductors. Finally, a prototype of fully transparent AMOLED display was successfully fabricated to demonstrate the potential of Pr-doping TFTs applied in transparent devices. Keywords: thin film transistor; negative bias illumination stress; Praseodymium doping; metal oxide; photo-response.
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Introduction Amorphous Oxide Semiconductors (AOSs) thin film transistors (TFTs) have been intensively studied for use in transparent and flexible electronics, such as pixel drivers, electronic paper, skin sensor, and smart identification cards.1-3 These TFTs exhibit sufficiently high mobility, excellently larger area uniformity and low-temperature capability. Additionally, transparency of the AOSs, because of their large bandgap (>3.0 eV), would be an advantage for realizing the fully transparent displays or sensors.4 However, the experimental date suggests that the characteristics of AOSs TFTs are strongly affected by the light irradiation even in the visible spectrum, especially, combining with the negative gate bias stress (NBIS).5,6 In deed, the light-induced instability of AOSs TFTs is a crucial issue that should be resolved before their commercialization into optoelectronic devices. To date, several models were proposed to reveal the mechanism of light-induced instability in AOSs TFTs. The carrier trapping and ambient interaction model are commonly used to expound this deterioration,7-9 but they can hardly explain the remarkable photo-response of AOSs TFTs under the visible-light irradiation (hυ
