Chemistry of Materials 1989, I, 325-330
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Effect of Ion Bombardment on the Chemical Reactivity of Gallium Arsenide( 100) June M. Epp and J. G. Dillard* Department of Chemistry, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061 -0212 Received December 29, 1988 The interaction of O2 and H20, over the exposure range 107-1013 langmuirs, with chemically cleaned (1:l HCl/H20) and Ar+-ion-bombarded (0.5-3 keV) GaAs surfaces has been studied by X-ray photoelectron spectroscopy. Ion-bombarded GaAs shows an increased chemical reactivity compared to that of chemically cleaned GaAs when exposed to O2 and H20. Ion-bombarded GaAs exposed to O2yields Ga203, As203,and As205;GazO3 being the major component. Exposure of chemically cleaned and ion-bombarded GaAs to H20 produces only peak broadening on the high binding energy side of the Ga 3d core level photopeak, indicating GaO(0H) formation at an exposure
