Electron Injection and Recombination in Ru(dcbpy)2

Electron Injection and Recombination in Ru(dcbpy)2...
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© Copyright 2001 by the American Chemical Society

VOLUME 105, NUMBER 24, JUNE 21, 2001

LETTERS Electron Injection and Recombination in Ru(dcbpy)2(NCS)2 Sensitized Nanostructured ZnO Christophe Bauer, Gerrit Boschloo, Emad Mukhtar, and Anders Hagfeldt* Department of Physical Chemistry, Uppsala UniVersity, Box 532, S-751 21 Uppsala, Sweden ReceiVed: NoVember 9, 2000; In Final Form: March 19, 2001

The dynamics of electron-transfer processes between bis(tetrabutylammonium) cis-bis(thiocyanato)bis(2,2′bypiridine-4,4′-dicarboxylato)ruthenium(II) (called N719) and nanostructured ZnO films have been investigated by femtosecond and nanosecond spectroscopy. The incident photon to current conversion efficiency (IPCE) for these dye-sensitized electrodes was 36% in the maximum of 530 nm, corresponding to a quantum efficiency of 80%. The highest IPCE values were obtained when the electrodes were prepared under conditions where formation of dye aggregates in the pores of the nanostructured films is avoided. For such films, the electron injection time was in the subpicosecond regime (