Subscriber access provided by Drexel University Libraries
Functional Inorganic Materials and Devices
Enhanced Thermoelectric Performance of Quaternary Cu2-2xAg2xSe1-xSx Liquid-like Chalcogenides Mengjia Guan, Kunpeng Zhao, Pengfei Qiu, Dudi Ren, Xun Shi, and Lidong Chen ACS Appl. Mater. Interfaces, Just Accepted Manuscript • DOI: 10.1021/acsami.9b01643 • Publication Date (Web): 15 Mar 2019 Downloaded from http://pubs.acs.org on March 17, 2019
Just Accepted “Just Accepted” manuscripts have been peer-reviewed and accepted for publication. They are posted online prior to technical editing, formatting for publication and author proofing. The American Chemical Society provides “Just Accepted” as a service to the research community to expedite the dissemination of scientific material as soon as possible after acceptance. “Just Accepted” manuscripts appear in full in PDF format accompanied by an HTML abstract. “Just Accepted” manuscripts have been fully peer reviewed, but should not be considered the official version of record. They are citable by the Digital Object Identifier (DOI®). “Just Accepted” is an optional service offered to authors. Therefore, the “Just Accepted” Web site may not include all articles that will be published in the journal. After a manuscript is technically edited and formatted, it will be removed from the “Just Accepted” Web site and published as an ASAP article. Note that technical editing may introduce minor changes to the manuscript text and/or graphics which could affect content, and all legal disclaimers and ethical guidelines that apply to the journal pertain. ACS cannot be held responsible for errors or consequences arising from the use of information contained in these “Just Accepted” manuscripts.
is published by the American Chemical Society. 1155 Sixteenth Street N.W., Washington, DC 20036 Published by American Chemical Society. Copyright © American Chemical Society. However, no copyright claim is made to original U.S. Government works, or works produced by employees of any Commonwealth realm Crown government in the course of their duties.
Page 1 of 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
ACS Applied Materials & Interfaces
1
Enhanced Thermoelectric Performance of Quaternary
2
Cu2-2xAg2xSe1-xSx Liquid-like Chalcogenides
3
Mengjia Guan,†,‡ Kunpeng Zhao,*,§ Pengfei Qiu,† Dudi Ren,† Xun Shi,*,†,§ and Lidong
4
Chen,†
5 6
†State
Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.
7 8
‡Center
9 10
of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China. §School
of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
11 12
ABSTRACT
13
Liquid-like binary Cu2-δX (X = S, Se, and Te) chalcogenides and their ternary solid solutions
14
have gained notable attention in thermoelectrics due to their interesting and abnormal thermal
15
and electrical transport properties. However, the previous studies mainly focus on the single
16
element alloying at either anion or cation site, whereas the investigation on cation/anion co-
17
alloying is very rare so far. Here, a series of quaternary Cu2-2xAg2xSe1-xSx (x = 0.01, 0.03, 0.05,
18
0.1, 0.15) liquid-like copper chalcogenide materials have been fabricated and the effects of Ag/S
19
co-alloying on the thermoelectric properties of Cu2Se have been systematically studied. It is
20
found that all compounds are mixed phases at room temperature but single cubic phase at high
21
temperatures. The introduction of Ag and S in Cu2Se brings about large mass fluctuation rather
22
than strain field fluctuation that effectively suppress the lattice thermal conductivity.
23
Furthermore, with increasing the Ag and S contents, the high electrical conductivity of pristine
24
Cu2Se is well tuned to the optimal range deriving from the single parabolic band model analysis.
25
Consequently, a peak zT of 1.6 at 900 K is achieved in Cu1.8Ag0.2Se0.9S0.1, which is about 33%
26
higher than that of binary Cu2Se.
27
ACS Paragon Plus Environment
1
ACS Applied Materials & Interfaces 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
1
Page 2 of 23
KEYWORDS: thermoelectric; liquid-like; co-alloying; chalcogenides; mass fluctuation
2 3
INTRODUCTION
4
Thermoelectric (TE) technology enables the direct energy conversion between heat and
5
electricity, showing a great potential in the applications of power generation and refrigeration
6
with the advantage of vast solubility, long lifetime as well as no emissions.1-4 However,
7
currently, the application of TE technology is limited in a small scale, which is mainly attributed
8
to the low energy conversion efficiency.5, 6 The key parameter assessing the energy conversion
9
efficiency is the material’s dimensionless TE figure of merit, defined as zT = 2T/κ, where is
10
the Seebeck coefficient, is the electrical conductivity, T is the absolute temperature, and κ is
11
the total thermal conductivity. In order to make the TE technology functional in large-scale use,
12
materials with high zT values are required. In the past decade, many strategies have been
13
proposed to enhance the zT such as minimizing the thermal conductivity and optimizing the
14
electrical properties.7-9
15
Recently, liquid-like materials have attracted great attentions in thermoelectrics due to their
16
extremely low lattice thermal conductivity and moderate electrical transports.10-13 The liquid-like
17
materials usually contain two sublattices inside the crystal structure.14 One is rigid anion
18
sublattice that provides crystalline pathways for carrier transport, and the other one is liquid-like
19
cation sublattice that can strongly scatter the heat-carrying phonons as well as eliminate part of
20
the transverse vibrational modes, yielding ultralow lattice thermal conductivities.10, 15 Cu2X (X =
21
S, Se, and Te) is one family of typical liquid-like materials. Despite of their simple chemical
22
compositions, Cu2X (X = S, Se, and Te) compounds have quite complex crystal structures and
23
phase transition features.11, 16 For instance, the crystal structure of the room-temperature Cu2Se
24
phase is reported to be either monoclinic or trigonal,17,
25
Cu2S phase is reported to be monoclinic.11 Furthermore, at room-temperature, Cu2Te is reported
26
to be a mixture of two phases with orthorhombic structure and hexagonal structure.19 Upon
27
heating, these low-symmetry structures finally convert into the high-symmetry cubic anti-fluorite
28
structure with the detailed Cu atom positions dependent on the type of chalcogen element. High
29
zT with values of 0.6-1.9 for Cu2S,11, 20, 21 1.5-2.6 for Cu2Se,10, 22-24 0.6-1.1 for Cu2Te,19, 25 have
30
been successively reported. More interestingly, despite their different crystal structures at room
18
while that of the room-temperature
ACS Paragon Plus Environment
2
Page 3 of 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
ACS Applied Materials & Interfaces
1
temperature, any two binary Cu2X (X = S, Se, and Te) compounds can form ternary solid
2
solutions.26-28 These ternary solid solutions not only possess enhanced TE performance but also
3
very interesting and special microstructure and crystal structure. For example, He et al. found
4
that Cu2S and Cu2Te can form complete solid solutions with hexagonal structure that is different
5
with those of Cu2S and Cu2Te at room temperature. Likewise, a special mosaic microstructure is
6
observed in the Cu2S0.5Te0.5 solid solution accompanying with some interesting and abnormal
7
electrical and thermal transport properties, which greatly enrich the investigation on the liquid-
8
like materials.28
9
Being the same with Cu2X (X = S, Se, and Te) compounds, Ag2X (X = S, Se, and Te)
10
compounds also represent a family of liquid-like materials.29-31 However, although Cu and Ag
11
elements possess similar chemical and physical properties, the crystal structures, phase transition
12
feature, and physical properties of Ag-based chalcogenides are quite different from those of Cu-
13
based chalcogenides. For example, the crystal structure of the room-temperature Ag2Se phase is
14
reported to be orthorhombic. It experiences a first-order phase transition at around 443 K and
15
transforms into face-centered cubic phase16. More importantly, Ag2X compounds are n-type
16
semiconductors, which is in contrary to the p-type conduction of Cu2X.31, 32 Thus, forming the
17
solid solutions between Cu2X and Ag2X might also create some interesting and abnormal
18
phenomenon. For instance, Tristan et al. found that the substitution of Cu by Ag could
19
effectively reduce the carrier concentration and thus enhance the TE performance of Cu2Se.33
20
All in all, both alloying at anion site or cation site play a significant role on the structural
21
evolution and TE transport properties of Cu2X and Ag2X. However, the previous studies mainly
22
focus on the single element alloying at either anion or cation site.34-37 The effect of cation/anion
23
co-alloying on the structural evolution and TE performance have not been studied so far. Thus, a
24
detailed investigation on the crystal structure, phase transition, and TE transport properties of
25
(Cu, Ag)2(S, Se, Te) is still desirable.
26
Herein we successfully synthesized a series of Cu2-2xAg2xSe1-xSx quaternary compounds by a
27
melting-annealing approach followed by spark plasma sintering. The effects of Ag and S
28
alloying on the phase composition, crystal structure, phase transition feature, and TE properties
29
of Cu2Se have been systematically studied. Besides, an effective single parabolic band model is
ACS Paragon Plus Environment
3
ACS Applied Materials & Interfaces 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
Page 4 of 23
1
used to provide theoretical insight into the enhanced TE performance. The present study provides
2
a comprehensive understanding on the TE properties of Cu2-2xAg2xSe1-xSx liquid-like materials.
3 4
EXPERIMENTAL
5
Synthesis. Polycrystalline Cu2-2xAg2xSe1-xSx (x = 0, 0.01, 0.03, 0.05, 0.1, and 0.15) samples
6
were synthesized via melting-annealing-sintering processes. Stoichiometric high-purity raw
7
elements Cu (shots, 99.999%, Alfa Aesar), Ag (shots, 99.999%, Alfa Aesar), Se (pieces,
8
99.999%, Alfa Aesar), and S (pieces, 99.999%, Alfa Aesar) were weighted out and put into
9
boron nitride crucibles, and then sealed in silica tubes under a vacuum level of -100 kPa. The
10
sealed tubes were slowly raised to 1423 K and dwelled for 12 h, and then slowly cooled down to
11
923 K. After annealing for 7 days at 923 K, these tubes were naturally cooled to room
12
temperature. Finally, the ingots were pulverized into powders in agate mortars and sintered by
13
spark plasma sintering (SPS, Sumitomo SPS-2040) at 673-773 K under a pressure of 65 MPa for
14
5 min. The sintering temperatures for x = 0, 0.01, 0.03, 0.05, 0.1, and 0.15 samples are 773 K,
15
753 K, 733 K, 713 K, 693 K, 673 K, respectively. Electrically insulating and thermally
16
conducting boron nitride layers were sprayed onto the surface of carbon foils to prevent Cu/Ag
17
migration or precipitation during sintering.
18
Characterization. The room temperature crystal structures were examined by X-ray
19
diffraction (XRD, Rigaku D/max 2550V) with Cu K radiation. The high temperature crystal
20
structures were identified by a Bruker D8 ADVANCE (BRUKER AXS GMBH, Germany) from
21
300 K to 700 K. For high-temperature XRD measurement, the heating rate is 5 K/min and
22
holding time at each temperature is 10 min. The sample morphologies and elemental distribution
23
were measured by backscattered electron image (BSE, ZEISS Supra 55) as well as energy
24
dispersive spectroscopy (EDS, Oxford Horiba 250). The shear and longitudinal sound velocities
25
at room temperature were obtained by use of ultrasonic measurement system UMS-100. The
26
electrical conductivity and Seebeck coefficient were characterized by Ulvac ZEM-3, while
27
the thermal diffusivity () was measured by Netzsch LFA 457 using the laser flash method in Ar
28
atmosphere. The heat capacity (Cp) was determined using a Netzsch DSC 404FE at a heating rate
29
of 5 K min-1. The sample densities () were obtained by the Archimedes method and the relative
ACS Paragon Plus Environment
4
Page 5 of 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
ACS Applied Materials & Interfaces
1
densities for all samples were larger than 98%. Then the total thermal conductivity was
2
calculated by relation = Cp. Uncertainties for the electrical conductivity, Seebeck
3
coefficient, and thermal diffusivity are around 3%, 5%, and 7%, respectively.
4 5
3. RESULTS AND DISCUSSION
6
Figure 1 shows the backscattered electron (BSE) image and energy dispersive spectroscopy
7
(EDS) mapping for Cu2-2xAg2xSe1-xSx (x = 0.01, 0.1, and 0.15) samples. Clearly, the Se and S
8
elements are homogeneously distributed throughout the detected region for all samples. This
9
phenomenon is coinciding with those in ternary Cu2Se1-xSx solid solutions. However, Ag-
10
enriched region can be clearly observed even in Cu1.98Ag0.02Se0.99S0.01, indicating the solubility
11
of Ag in Cu2Se is quite low at room temperature. The alloyed Ag atoms prefer to form the
12
secondary phase rather than entering the crystal lattice. This observation is also in accordance
13
with previous studies of Tristan et al.33
14 15
Figure 1. Backscattered electron (BSE) image and energy dispersive spectroscopy (EDS)
16
mapping for Cu2-2xAg2xSe1-xSx (x = 0.01, 0.1, and 0.15) samples.
17
ACS Paragon Plus Environment
5
ACS Applied Materials & Interfaces 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
Page 6 of 23
1 2
Figure 2. (a) Room-temperature X-ray diffraction (XRD) patterns for powder Cu2-2xAg2xSe1-xSx
3
(x = 0, 0.01, 0.03, 0.05, 0.1, and 0.15) samples. (b) Temperature dependence of the heat capacity
4
(Cp) for Cu2-2xAg2xSe1-xSx (x = 0, 0.01 and 0.1) at constant pressure. The inset in Figure 2b
5
illustrates the high-temperature crystal structure of Cu2-2xAg2xSe1-xSx. The anions Se/S form the
6
face-centered cubic framework, while the cations Cu/Ag are randomly distributed in 8c and 32f
7
Wyckoff sites. High-temperature X-ray diffraction patterns for (c) Cu1.98Ag0.02Se0.99S0.01 and (d)
8
Cu1.8Ag0.2Se0.9S0.1 measured from 300 K to 700 K.
9 10
Figure 2a displays the room temperature X-ray diffraction (XRD) patterns for powder Cu2-
11
2xAg2xSe1-xSx
12
= 0.01, are introduced to Cu2Se, nearly all diffraction patterns can be still indexed to trigonal
13
Cu2Se phase. The second phases observed in EDS mapping are not detected because their low
14
content is beyond the detection limit of XRD measurements. As x increase to 0.03, the
(x = 0, 0.01, 0.03, 0.05, 0.1, and 0.15) samples. When a tiny content of Ag and S, x
ACS Paragon Plus Environment
6
Page 7 of 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
ACS Applied Materials & Interfaces
1
diffraction peaks belonging to orthorhombic CuAgSe phase (PDF#25-1180) begin to appear, and
2
intensity of these new diffraction peaks become stronger with increasing Ag and S contents. This
3
indicates that the Ag-enriched phases observed by EDS are CuAgSe. Although all quaternary
4
Cu2-2xAg2xSe1-xSx samples are mixed phased at room temperature, they convert into pure single
5
phase at high temperatures. As shown in Figure 2c and 2d, with the increase of temperature, the
6
diffraction peaks belonging to Cu2Se and CuAgSe gradually disappear and some new diffraction
7
peaks emerge, suggesting the accompaniment of phase transitions at 400-500 K. The newly
8
appeared diffraction peaks can be well indexed to the cubic phase (PDF#46-1129) with the space
9
group of Fm3m (see the inset in Figure 2b). This suggests that the CuAgSe phase obseved at
10
room temperature have dissolved into the Cu2Se matrix and finally form a solid solution after
11
experiencing certain phase transitions.
12
Alloying Ag and S in Cu2Se not only alters the crystal structures but also changes the phase
13
transition features. Figure 2b plots the temperature dependent heat capacity (Cp) curves for Cu2-
14
2xAg2xSe1-xSx
15
observed at around 400 K, corresponding to the transition from room-temperature trigonal phase
16
to high-temperature cubic phase. While for Cu1.98Ag0.02Se0.99S0.01 and Cu1.8Ag0.2Se0.9S0.1, two
17
adjacent peaks are detected in their Cp curves. One of the peaks should be attributed to phase
18
transition in Cu2Se phase, and the other might be ascribed to the existence of CuAgSe phase with
19
phase transition from orthorhombic structure to cubic structure. This is in well accordance with
20
our high-temperature XRD measurements. Moreover, the temperatures of these peaks are shifted
21
to lower temperatures, suggesting that the S and Ag contents directly influences the phase
22
transition character. Such reduced phase transition temperature is the common phenomenon for
23
most liquid-like solid solutions such as Te-alloyed Cu7PSe6 and S-alloyed Cu2Se.38, 39 It should
24
be noted that the phase transitions of TE materials are detrimental for actual applications because
25
the sudden change of thermal expansion coefficient could bring about high internal stress
26
between the materials and the electrodes in the device, resulting in poor contact and deteriorated
27
performance.
(x = 0, 0.01 and 0.1). For the pristine Cu2Se, only one endothermic peak is
ACS Paragon Plus Environment
7
ACS Applied Materials & Interfaces 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
Page 8 of 23
1 2
Figure 3. Temperature dependences of (a) electrical conductivity , (b) Seebeck coefficient ,
3
(c) power factor PF, (d) total thermal conductivity , (e) lattice thermal conductivity L, and (f)
4
TE figure of merit zT for Cu2-2xAg2xSe1-xSx (x = 0, 0.01, 0.03, 0.05, 0.1, and 0.15).
5 6
The TE transport properties for Cu2-2xAg2xSe1-xSx (x = 0, 0.01, 0.03, 0.05, 0.1, and 0.15)
7
samples were measured from 300 to 900 K, and the results are shown in Figure 3. To increase
ACS Paragon Plus Environment
8
Page 9 of 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
ACS Applied Materials & Interfaces
1
the readability, all data are broken into two parts. The part at low temperature range represents
2
the data for the mixed phases while the part at high temperature range represents the data for the
3
single cubic phase. With increasing Ag and S contents, the electrical conductivity is roughly
4
decreased in the entire temperature range. Specifically, the at 500 K for Cu1.7Ag0.3Se0.85S0.15 is
5
decreased by a factor of 19 in comparison with that for pristine Cu2Se. Such variation is much
6
larger than that of Cu2Se1-xSx with similar x, illustrating that Ag also plays an important role in
7
adjusting electrical transport properties.40 Besides, the electrical conductivity of all compounds
8
decreases monotonically with increasing temperature before 800 K, behaving as highly
9
degenerate semiconductors. The slight upturn above 800 K might be ascribed to the bipolar
10
conduction. At room temperature, is roughly decreased when increasing the Ag/S contents.
11
The reason for this should be that Cu2Se is a p-type semiconductor while CuAgSe is an n-type
12
semiconductor, thus the total Seebeck coefficient is partly counterbalanced.41 Nevertheless,
13
above 500 K, all the samples convert to the single cubic phase and their values monotonically
14
increase with increasing the Ag/S alloying contents. The increased together with the decreased
15
imply that the hole concentration is lowered in their high temperature phases. Besides, we
16
have also measured the electrical transport properties for Cu1.9Ag0.1Se0.95S0.05 sample along two
17
different directions. As shown in Figure S1, the sample exhibits similar electrical transport
18
properties over the entire temperature range along directions perpendicular and parallel to the
19
pressing direction, indicating isotropic TE properties. The recycling tests of electrical transport
20
properties demonstrateare Cu2-2xAg2xSe1-xSx are stable at high temperature (see Figure S2). Based
21
on the measured and the power factor (PF = ) of Cu2-2xAg2xSe1-xSx are calculated and
22
shown in Figure 3c. With increasing x, PFs are gradually reduced owing to the strongly
23
suppressed electrical conductivity.
24
The total thermal conductivity as a function of temperature is displayed in Figure 3d. At
25
room temperature, no clear composition dependence is observed due to the influence of mixed
26
phases. Above 450 K, the values are significantly lowered when increasing the Ag and S
27
alloying contents, which is on account of the simultaneously suppressed carrier thermal
28
conductivity (C) and lattice thermal conductivity (L). Specifically, the at 500 K for
29
Cu1.7Ag0.3Se0.85S0.15 is only 0.34 W m-1 K-1, which is only one-quarter of that for pristine Cu2Se.
30
The lattice thermal conductivity L is calculated through subtracting the carrier thermal
ACS Paragon Plus Environment
9
ACS Applied Materials & Interfaces 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
Page 10 of 23
1
conductivity (C) from total thermal conductivity () via the Wiedemann-Franz law C = LT,
2
where L is the Lorenz number determined by the single parabolic band (SPB) model with
3
acoustic scattering (Figure S3). All samples exhibit extremely low L with values below 0.5 W
4
m-1 K-1 in the whole measured temperature range, which are among the lowest values reported in
5
most state-of-the-art TE materials. The L is roughly decreased with increasing the Ag and S
6
alloying contents. Besides, the L temperature dependences for these quaternary Cu2-2xAg2xSe1-
7
xSx
8
normal crystalline compounds.9
samples are relatively weak, which is different with the strong temperature dependency of
9
The TE figure of merit zT (= T/) as a function of temperature is calculated and plotted
10
in Figure 3f. Although the PFs of Cu2-2xAg2xSe1-xSx are reduced, an overall enhancement of zT is
11
achieved with the help of much reduced thermal conductivity. The highest zT value of 1.6 is
12
obtained at 900 K for Cu1.8Ag0.2Se0.9S0.1, which represents about 33% enhancement over that of
13
pristine Cu2Se.
14 15
Figure 4. (a) Lattice thermal conductivity L as a function of alloying content x for Cu2-
16
2xAg2xSe1-xSx
17
L of Cu2Se1-xSx are calculated using the and from ref. 40. The dashed lines are calculated
18
based on the Callaway model. (b) Mass fluctuation scattering parameter M and strain field
19
fluctuation scattering parameter S as a function of alloying content x. M, S and S, S represent
20
the mass fluctuation and strain field fluctuation induced by S alloying at Se sites, while M, Ag
21
and S, Ag represent the mass fluctuation and strain field fluctuation induced by Ag alloying at Cu
22
sites.
(x = 0, 0.01, 0.03, 0.05, 0.1, and 0.15) and Cu2Se1-xSx solid solutions at 500 K. The
ACS Paragon Plus Environment
10
Page 11 of 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
ACS Applied Materials & Interfaces
1 2
At high temperatures, all quaternary Cu2-2xAg2xSe1-xSx samples are solid solutions with
3
single cubic phase. Thus the random distribution of Ag and S atoms on the Cu and Se site will
4
definitely introduce additional mass and strain fluctuations to scatter phonons, leading to
5
reduction of lattice thermal conductivity. In order to clarify this issue, the Callaway model is
6
used to analyze the composition dependence of L for Cu2-2xAg2xSe1-xSx compounds. Provided
7
the grain structures of all samples are similar, the scattering mechanisms governing heat
8
transport are Umklapp processes and point defect scattering. Then, the lattice thermal
9
conductivity L of a solid solution can be expressed as
10
tan 1 u L u pure
11
u2
(1)
2 D pure h s 2
(2)
12
where u is the disorder scaling parameter, s is the mean sound velocity, h is the Planck constant,
13
D is the Debye temperature, pure is the lattice thermal conductivity of pure Cu2Se matrix, is
14
the unit cell volume and is the scattering parameter. The scattering parameter includes two
15
parts: M and S, which are related to mass fluctuation and strain field fluctuation, respectively.
16
They can be expressed as: 2
17
M i 1 2 M i1 M i2 c fi fi i Mi i 1 M M n ci i 1
18
M i 1 2 ri1 ri 2 c fi fi i i ri i 1 M S n ci i 1
n
n
2
2
(3)
2
(4)
ACS Paragon Plus Environment
11
ACS Applied Materials & Interfaces 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
Page 12 of 23
1
where n = 2. ci are the relative degeneracies of the respective sites, and the parameter i is a
2
function of the Grüneisen parameter that characterizes the anharmonicity of the lattice. In
3
general, is regarded as an adjustable parameter and usually obtained by fitting the experimental
4
results. If there are k different types of atoms that occupy each sublattice, the kth atom of the ith
5
sublattice has mass M ik , radius ri k , and fractional occupation f i k . The average mass and radius of
6
atoms on the ith sublattice are
M i fi1M i1 fi 2 M i2 , r i fi1ri1 fi 2 ri 2
7 8
(5)
and the average atomic mass of the compound is n
9
M
c M i 1
i
i
n ci i 1
.
(6)
10
Based on the above formulas, we firstly calculated the L-x relation for Cu2Se1-xSx solid solutions
11
and obtained the scattering parameters M, S and S, S resulting from Se/S disorder. 40, 42-44 Then,
12
we calculated the L-x relation for Cu2-2xAg2xSe1-xSx solid solutions and obtained the scattering
13
parameters M, Ag and S, Ag for Cu/Ag disorder by subtracting M, S and S, S from the total M
14
and S. As shown in Figure 4a, the symbols stand for the experimental data at 500 K and the
15
dashed lines are the calculated results based on the Callaway model. The scattering parameters
16
M and S, as a function of alloying content x, are shown in Figure 4b. Obviously, the values of
17
both S, S and S, Ag are small due to relatively small ionic radius difference between S and Se,
18
and between Cu and Ag. Thus, the strain field fluctuation scattering in Cu2-2xAg2xSe1-xSx solid
19
solutions is nearly negligible. In contrast, the values of M, S and M, Ag are much larger, which
20
implies that the mass fluctuation introduced by S alloying at Se sites or Ag alloying at Cu sites
21
are the major contributions to phonon scattering and should be responsible for the large reduction
22
of L in Cu2-2xAg2xSe1-xSx.
23
ACS Paragon Plus Environment
12
Page 13 of 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
ACS Applied Materials & Interfaces
1 2
Figure 5. (a) Seebeck coefficient (b) power factor PF, (c) total thermal conductivity , (d)
3
figure of merit zT as a function of electrical conductivity at 500 K for Cu2-2xAg2xSe1-xSx (x = 0,
4
0.01, 0.03, 0.05, 0.1, and 0.15) samples. The red sphere symbols are experimental data in this
5
work. The other symbols are the data of Cu2Se-based compounds taken from refs. 10, 22, 33, 40,
6
and 45-49. The dashed lines are the prediction based on the SPB model.
7 8
To shed light on the origin of enhanced TE performance of Cu2-2xAg2xSe1-xSx, we modeled
9
their TE properties using the single parabolic band (SPB) model. The experimental data of
10
Cu2Se-based compounds from previous studies are also included for comparison.10, 22, 33, 40, 45-49
11
The temperature is selected to be 500 K because all samples possess single cubic phase at this
12
temperature, then the influence of different crystal structures can be excluded. Based on the
13
Boltzmann statistics, the Seebeck coefficient , carrier concentration p and electrical
14
conductivity of semiconductors can be respectively expressed as
ACS Paragon Plus Environment
13
ACS Applied Materials & Interfaces 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
1
kB s 5 / 2 e
Page 14 of 23
(7)
2
p N c exp =2 8 3 m*k BT / h 2
exp
(8)
3
pe 2e 8 3k BT / h 2 exp m*3/2
(9)
3/2
3/2
4
where e is the electron charge, s is the scattering parameter (-1/2 for acoustic phonon scattering),
5
and (= EF/kBT) is the reduced Fermi energy. Through Equations (7-9), the relationship between
6
and can be obtained when m*3/2 (called weighted mobility parameter) is assigned to a value.
7
50, 51
8
s-1me3/2. All the experimental data agree well with calculated line, implying that all Cu2Se-based
9
samples possess comparable weighted mobility parameter μm*3/2 at 500 K. However, we are not
10
sure whether is changed or not because the regulation of electrical conductivity through
11
alloying or doping may change the effective mass m*. The PF- relation is calculated from and
12
depicted in Figure 5b. All the data fall around on the theoretical line. The for Cu2-2xAg2xSe1-
13
xSx
14
Thus, its PF is relatively low compared with pristine Cu2Se.
The red dashed line in Figure 5a is calculated by taking m*3/2 with a value of 24.6 cm2 V-1
solid solutions are lower than the optimal electrical conductivity opt,
PF
for maximal PF.
15
The L of Cu2Se-based compounds can vary from 0.2 to 0.6 W m-1 K-1 by various
16
approaches such as doping, alloying or nanostructuring. Thus, here two L values of 0.2 and 0.6
17
W m-1 K-1 are separately taken to calculate the total thermal conductivity . As shown in Figure
18
5c, the for all Cu2Se-based compounds lie in between these two predicted lines. With
19
increasing , is significantly improved especially when is larger than 105 S m-1.
20
Based on the calculated PF and shown above, the relationship between zT and is
21
calculated, as shown in Figure 5d. Almost all experimental data locate in the range (red shadow
22
area) set by calculations. The upper and lower boundaries of the shadow area are calculated with
23
L of 0.2 and 0.6 W m-1 K-1, respectively. Apparently, the maximal zT value is greatly improved
24
when decreasing the lattice thermal conductivity. This indicates that decreasing L is one of the
25
most effective ways to improve the TE properties of Cu2Se-based cmopounds. In addition, the
26
optimal electrical conductivity opt, zT for the maximal zT is around (1-4)×104 S m-1, which is
ACS Paragon Plus Environment
14
Page 15 of 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
ACS Applied Materials & Interfaces
1
slightly lower than that for PF because of the contribution from carrier thermal conductivity. In
2
this study, after alloyed with S and Ag, the of Cu2Se is much lowered to locate in the range of
3
optimal electrical conductivity opt,
4
performance of quaternary Cu2-2xAg2xSe1-xSx is much enhanced, among the highest zT values
5
reported for Cu2Se-based materials.
zT.
In combination with the notably reduced L, the TE
6 7
CONCLUSION
8
A series of quaternary Cu2-2xAg2xSe1-xSx (x = 0.01, 0.03, 0.05, 0.1, 0.15) chalcogenides have
9
been synthesized in this study. The phase composition, crystal structure, phase transition feature,
10
and TE properties of these samples have been systematically studied. After alloyed with Ag and
11
S, all compounds exist in mixed phases at room temperature but convert into single cubic phase
12
at elevated temperature. The lattice thermal conductivity is significantly suppressed because of
13
the strong phonon scattering from additional mass fluctuations induced by Ag and S co-alloying.
14
Furthermore, the electrical conductivity is much lowered after introduction of Ag and S, leading
15
to slight reduction of both electrical thermal conductivity and power factor. The SPB model
16
analysis demonstrates that the electrial transport has been well tuned to the optimal range. As a
17
result, a peak zT of 1.6 was achieved at 900 K for Cu1.8Ag0.2Se0.9S0.1, which represents an
18
enhancement of 33% over that of pristine Cu2Se.
19 20
ASSOCIATED CONTENT
21
Supporting Information
22
The Supporting Information is available free of charge on the ACS Publications website at DOI:
23
10.1021/acsami.
24
TE properties along different directions; recycling tests; Lorenz number (PDF)
25 26
ACS Paragon Plus Environment
15
ACS Applied Materials & Interfaces 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
1
AUTHOR INFORMATION
2
Corresponding Authors:
3
*E-mail:
[email protected] (K.Z.).
4
*E-mail:
[email protected] (X.S.).
Page 16 of 23
5 6
NOTES
7
There are no conflicts to declare.
8 9
ACKNOWLEDGEMENTS
10
This work was supported by the National Key Research and Development Program of China
11
(2018YFB0703600), the National Natural Science Foundation of China (NSFC) under the No.
12
51625205 and 11574333, the Key Research Program of Chinese Academy of Sciences (Grant
13
No. KFZD-SW-421), and the Shanghai Government (16520721400).
14 15
REFERENCES
16
(1) Tan, G.; Zhao, L.; Kanatzidis, M. G. Rationally Designing High-performance Bulk
17
Thermoelectric Materials. Chem. Rev. 2016, 116 (19), 12123-12149.
18
(2) Snyder, G. J.; Toberer, E. S., Complex Thermoelectric Materials. Nat. Mater. 2008, 7,
19
101-110.
20
(3) Shi, X.; Chen, L.; Uher, C. Recent Advances in High-performance Bulk
21
Thermoelectric Materials. Int. Mater. Rev. 2016, 61 (6), 379-415.
22
(4) Li, Z.; Xiao, C.; Zhu, H.; Xie, Y. Defect Chemistry for Thermoelectric Materials. J.
23
Am. Chem. Soc. 2016, 138 (45), 14810-14819.
ACS Paragon Plus Environment
16
Page 17 of 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
ACS Applied Materials & Interfaces
1
(5) Shi, X.; Chen, L. Thermoelectric Materials Step Up. Nat. Mater. 2016, 15 (7), 691-
2
692.
3
(6) Koumoto, K.; Funahashi, R.; Guilmeau, E.; Miyazaki, Y.; Weidenkaff, A.; Wang, Y.;
4
Wan, C. Thermoelectric Ceramics for Energy Harvesting. J. Am. Ceram. Soc. 2013, 96
5
(1), 1-23.
6
(7) Liu, W.; Yan, X.; Chen, G.; Ren, Z. Recent Advances in Thermoelectric
7
Nanocomposites. Nano Energy 2012, 1 (1), 42-56.
8
(8) Pei, Y.; Shi, X.; LaLonde, A.; Wang, H.; Chen, L.; Snyder, G. J. Convergence of
9
Electronic Bands for High Performance Bulk Thermoelectrics. Nature 2011, 473 (7345),
10
66-69.
11
(9) Zhao, W.; Wei, P.; Zhang, Q.; Peng, H.; Zhu, W.; Tang, D.; Yu, J.; Zhou, H.; Liu, Z.;
12
Mu, X.; He, D.; Li, J.; Wang, C.; Tang, X.; Yang, J. Multi-localization Transport
13
Behaviour in Bulk Thermoelectric Materials. Nat. Commun. 2015, 6, 6197.
14
(10) Liu, H.; Shi, X.; Xu, F.; Zhang, L.; Zhang, W.; Chen, L.; Li, Q.; Uher, C.; Day, T.;
15
Snyder, G. J. Copper Ion Liquid-like Thermoelectrics. Nat. Mater. 2012, 11 (5), 422-425.
16
(11) He, Y.; Day, T.; Zhang, T.; Liu, H.; Shi, X.; Chen, L.; Snyder, G. J. High
17
Thermoelectric Performance in Non-toxic Earth-abundant Copper Sulfide. Adv. Mater.
18
2014, 26 (23), 3974-3978.
19
(12) Li, B.; Wang, H.; Kawakita, Y.; Zhang, Q.; Feygenson, M.; Yu, H. L.; Wu, D.; Ohara,
20
K.; Kikuchi, T.; Shibata, K.; Yamada, T.; Ning, X. K.; Chen, Y.; He, J. Q.; Vaknin, D.; Wu,
21
R. Q.; Nakajima, K.; Kanatzidis, M. G. Liquid-like Thermal Conduction in Intercalated
22
Layered Crystalline Solids. Nat. Mater. 2018, 17, 226-230.
23
(13) Lv, Y.; Chen J.; Chen, L. Congruent Growth of Cu2Se Thermoelectric Thin Films
24
Enabled by Using High Ablation Fluence During Pulsed Laser Deposition. J. Inorg.
25
Mater. 2015, 30 (10), 1115.
ACS Paragon Plus Environment
17
ACS Applied Materials & Interfaces 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
Page 18 of 23
1
(14) Qiu, W.; Lu, P.; Yuan, X.; Xu, F.; Wu, L.; Ke, X.; Liu, H.; Yang, J.; Shi, X.; Chen, L.;
2
Yang, J.; Zhang, W. Structure Family and Polymorphous Phase Transition in the
3
Compounds with Soft Sublattice: Cu2Se As an Example. J. Chem. Phys. 2016, 144 (19),
4
194502.
5
(15) Sun, Y.; Xi, L.; Yang, J.; Wu, L.; Shi, X.; Chen, L.; Snyder, J.; Yang, J.; Zhang, W.
6
The “Electron Crystal” Behavior in Copper Chalcogenides Cu2X (X = Se, S). J. Mater.
7
Chem. A 2017, 5 (10), 5098-5105.
8
(16) Asadov, Y. G.; Aliyev, Y. I.; Babaev, A. G. Polymorphic Transformations in Cu2Se,
9
Ag2Se, AgCuSe and the Role of Partial Cation-cation and Anion-anion Replacement in
10
Stabilizing Their Modifications. Phys. Part. Nuclei+ 2015, 46 (3), 452-474.
11
(17) Lu, P.; Liu, H.; Yuan, X.; Xu, F.; Shi, X.; Zhao, K.; Qiu, W.; Zhang, W.; Chen, L.
12
Multiformity and Fluctuation of Cu Ordering in Cu2Se Thermoelectric Materials. J. Mater.
13
Chem. A 2015, 3 (13), 6901-6908.
14
(18) Eikeland, E.; Blichfeld, A. B.; Borup, K. A.; Zhao, K.; Overgaard, J.; Shi, X.; Chen,
15
L.; Iversen, B. B. Crystal Structure Across The Beta to Alpha Phase Transition in
16
Thermoelectric Cu2-xSe. IUCrJ 2017, 4 (Pt 4), 476-485.
17
(19) He, Y.; Zhang, T.; Shi, X.; Wei, S.-H.; Chen, L. High Thermoelectric Performance in
18
Copper Telluride. NPG Asia Materials 2015, 7 (8), e210.
19
(20) Zhao, L.; Wang, X.; Fei, F. Y.; Wang, J.; Cheng, Z.; Dou, S.; Wang, J.; Snyder, G. J.
20
High Thermoelectric and Mechanical Performance in Highly Dense Cu2-xS Bulks
21
Prepared by A Melt-solidification Technique. J. Mater. Chem. A 2015, 3 (18), 9432-9437.
22
(21) Yao, Y.; Zhang, B.; Pei, J.; Liu, Y.; Li, J. Thermoelectric Performance Enhancement
23
of Cu2S by Se Doping Leading to a Simultaneous Power Factor Increase and Thermal
24
Conductivity Reduction. J. Mater. Chem. C 2017, 5 (31), 7845-7852.
25
(22) Nunna, R.; Qiu, P.; Yin, M.; Chen, H.; Hanus, R.; Song, Q.; Zhang, T.; Chou, M.-Y.;
26
Agne, M. T.; He, J.; Snyder, G. J.; Shi, X.; Chen, L. Ultrahigh Thermoelectric
ACS Paragon Plus Environment
18
Page 19 of 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
ACS Applied Materials & Interfaces
1
Performance in Cu2Se-based Hybrid Materials with Highly Dispersed Molecular CNTs.
2
Energy Environ. Sci. 2017, 10 (9), 1928-1935.
3
(23) Li, M.; Cortie, D. L.; Liu, J.; Yu, D.; Islam, S. M. K. N.; Zhao, L.; Mitchell, D. R. G.;
4
Mole, R. A.; Cortie, M. B.; Dou, S.; Wang, X. Ultra-high Thermoelectric Performance in
5
Graphene Incorporated Cu2Se: Role of Mismatching Phonon Modes. Nano Energy
6
2018, 53, 993-1002.
7
(24) Olvera, A. A.; Moroz, N. A.; Sahoo, P.; Ren, P.; Bailey, T. P.; Page, A. A.; Uher, C.;
8
Poudeu, P. F. P. Partial Indium Solubility Induces Chemical Stability and Colossal
9
Thermoelectric Figure of Merit in Cu2Se. Energy Environ. Sci. 2017, 10 (7), 1668-1676.
10
(25) Sedat Ballikaya, H. C.; Salvadorc, J. R.; Uher, C. Thermoelectric Properties of Ag-
11
doped Cu2Se and Cu2Te. J. Mater. Chem. A 2013, 1, 12478.
12
(26) Zhao, K.; Qiu, P.; Song, Q.; Blichfeld, A. B.; Eikeland, E.; Ren, D.; Ge, B.; Iversen,
13
B. B.; Shi, X.; Chen, L. Ultrahigh Thermoelectric Performance in Cu2-ySe0.5S0.5 Liquid-
14
like Materials. Materials Today Physics 2017, 1, 14-23.
15
(27) Zhao, K.; Guan, M.; Qiu, P.; Blichfeld, A. B.; Eikeland, E.; Zhu, C.; Ren, D.; Xu, F.;
16
Iversen, B. B.; Shi, X.; Chen, L. Thermoelectric Properties of Cu2Se1-xTex Solid
17
Solutions. J. Mater. Chem. A 2018, 6 (16), 6977-6986.
18
(28) He, Y.; Lu, P.; Shi, X.; Xu, F.; Zhang, T.; Snyder, G. J.; Uher, C.; Chen, L. Ultrahigh
19
Thermoelectric Performance in Mosaic Crystals. Adv. Mater. 2015, 27 (24), 3639-3644.
20
(29) Shi, X.; Chen, H.; Hao, F.; Liu, R.; Wang, T.; Qiu, P.; Burkhardt, U.; Grin, Y.; Chen,
21
L. Room-temperature Ductile Inorganic Semiconductor. Nat. Mater. 2018, 17, 421-426.
22
(30) Fujikane, M.; Kurosaki, K.; Muta, H.; Yamanaka, S. Thermoelectric Properties of α-
23
and β-Ag2Te. J. Alloy. Compd. 2005, 393 (1-2), 299-301.
24
(31) Ferhat, M.; Nagao, J. Thermoelectric and Transport Properties of β-Ag2Se
25
Compounds. J. Appl. Phys. 2000, 88 (2), 813-816.
ACS Paragon Plus Environment
19
ACS Applied Materials & Interfaces 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
Page 20 of 23
1
(32) Pei, Y.; Heinz, N. A.; Snyder, G. J. Alloying to Increase the Band Gap for Improving
2
Thermoelectric Properties of Ag2Te. J. Mater. Chem. 2011, 21, 18256.
3
(33) Day, T. W.; Borup, K. A.; Zhang, T.; Drymiotis, F.; Brown, D. R.; Shi, X.; Chen, L.;
4
Iversen, B. B.; Snyder, G. J. High-temperature Thermoelectric Properties of
5
Cu1.97Ag0.03Se1+y. Mater. Renew. Sustain. Energy 2014, 3 (2).
6
(34) Olvera, A.; Bailey, T. P.; Uher, C.; Poudeu, P. F. P. Chemical Manipulation of
7
Phase Stability and Electronic Behavior in Cu4-xAgxSe2. J. Mater. Chem. A 2018, 6 (16),
8
6997-7004.
9
(35) Guan, M.; Qiu, P.; Song, Q.; Yang, J.; Ren, D.; Shi, X.; Chen, L. Improved
10
Electrical Transport Properties and Optimized Thermoelectric Figure of Merit in Lithium-
11
doped Copper Sulfides. Rare Metals 2018, 37, 282-289.
12
(36) Yao, Y.; Zhang, B. P.; Pei, J.; Sun, Q.; Nie, G.; Zhang, W. Z.; Zhuo, Z. T.; Zhou, W.,
13
High Thermoelectric Figure of Merit Achieved in Cu2S1-xTex Alloys Synthesized by
14
Mechanical Alloying and Spark Plasma Sintering. ACS. Appl. Mater. Inter. 2018, 10 (38),
15
32201-32211.
16
(37) Zhao, L.; Wang, X.; Yun, F.; Wang, J.; Cheng, Z.; Dou, S.; Wang, J.; Snyder, G. J.
17
The Effects of Te2- And I- Substitutions on the Electronic Structures, Thermoelectric
18
Performance, and Hardness in Melt-quenched Highly Dense Cu2-xSe. Adv. Electron.
19
Mater. 2015, 1 (3), 1400015.
20
(38) Chen, R.; Qiu, P.; Jiang, B.; Hu, P.; Zhang, Y.; Yang, J.; Ren, D.; Shi, X.; Chen, L.
21
Significantly Optimized Thermoelectric Properties in High-symmetry Cubic Cu7PSe6
22
Compounds via Entropy Engineering. J. Mater. Chem. A 2018, 6 (15), 6493-6502.
23
(39) Zhao, K.; Blichfeld, A. B.; Eikeland, E.; Qiu, P.; Ren, D.; Iversen, B. B.; Shi, X.;
24
Chen, L. Extremely Low Thermal Conductivity and High Thermoelectric Performance in
25
Liquid-like Cu2Se1−xSx Polymorphic Materials. J. Mater. Chem. A 2017, 5 (34), 18148-
26
18156.
ACS Paragon Plus Environment
20
Page 21 of 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
ACS Applied Materials & Interfaces
1
(40) Zhao, K.; Blichfeld, A. B.; Chen, H.; Song, Q.; Zhang, T.; Zhu, C.; Ren, D.; Hanus,
2
R.; Qiu, P.; Iversen, B. B.; Xu, F.; Snyder, G. J.; Shi, X.; Chen, L. Enhanced
3
Thermoelectric Performance Through Tuning Bonding Energy in Cu2Se1-xSx Liquid-like
4
Materials. Chem. Mater. 2017, 29 (15), 6367-6377.
5
(41) Wang, X.; Qiu, P.; Zhang, T.; Ren, D.; Wu, L.; Shi, X.; Yang, J.; Chen, L.
6
Compound Defects and Thermoelectric Properties in Ternary CuAgSe-based Materials.
7
J. Mater. Chem. A 2015, 3 (26), 13662-13670.
8
(42) J. Yang, G. P. M., and L. Chen, Strain Field Fluctuation Effects on Lattice Thermal
9
Conductivity of ZrNiSn -based Thermoelectric Compounds. Appl. Phys. Lett. 2014, 85,
10
1140.
11
(43) Callaway, J., Effect of Point Imperfections on Lattice Thermal Conductivity. Phys.
12
Rev. 1960, 120, 1149.
13
(44) Qin, Y.; Qiu, P.; Shi, X.; Chen, L. Thermoelectric Properties for CuInTe2-xSx (x = 0,
14
0.05, 0.1, 0.15) Solid Solution. J. Inorg. Mater. 2017, 32 (11), 1171.
15
(45) Liu, W.; Hong M.; Yang, L.; Moshwan, R.; Chen Z.; Zou, J. Ag Doping Induced
16
Abnormal Lattice Thermal Conductivity in Cu2Se. J. Mater. Chem. C 2018, 6, 13225.
17
(46) Yang, L.; Chen, Z.; Han, G.; Hong, M.; Huang, L.; Zou, J. Te-Doped Cu2Se
18
Nanoplates with a High Average Thermoelectric Figure of Merit. J. Mater. Chem. A
19
2016, 4 (23), 9213-9219.
20
(47) Yu, J.; Zhao, K.; Qiu, P.; Shi, X.; Chen, L. Thermoelectric Properties of Copper-
21
deficient Cu2-xSe (0.05 ≤ x ≤ 0.25) Binary Compounds. Ceram. Int. 2017, 43 (14),
22
11142-11148.
23
(48) Su, X.; Fu, F.; Yan, Y.; Zheng, G.; Liang, T.; Zhang, Q.; Cheng, X.; Yang, D.; Chi,
24
H.; Tang, X.; Zhang, Q.; Uher, C. Self-propagating High-temperature Synthesis for
25
Compound Thermoelectrics and New Criterion for Combustion Processing. Nat.
26
Commun. 2014, 5, 4908.
ACS Paragon Plus Environment
21
ACS Applied Materials & Interfaces 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
Page 22 of 23
1
(49) Yu, B.; Liu, W.; Chen, S.; Wang, H.; Wang, H.; Chen, G.; Ren, Z. Thermoelectric
2
Properties of Copper Selenide with Ordered Selenium Layer and Disordered Copper
3
Layer. Nano Energy 2012, 1 (3), 472-478.
4
(50) Rowe, D. M.; GAO, M. -ln Plot As a Thermoelectric Material Performance
5
Indicator. Jour. Mater. Sci. Lett. 1995, 14, 617-619.
6
(51) Ahmed, F.; Tsujii, N.; Mori, T., Thermoelectric Properties of CuGa1-xMnxTe2: Power
7
Factor Enhancement by Incorporation of Magnetic Ions. J. Mater. Chem. A 2017, 5 (16),
8
7545-7554.
9
ACS Paragon Plus Environment
22
Page 23 of 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
1
ACS Applied Materials & Interfaces
Abstract Graphic
2
ACS Paragon Plus Environment
23