DOI: 10.1021/cg900616c
2010, Vol. 10 1084–1089
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Fabrication of Atomically Flat ScAlMgO4 Epitaxial Buffer Layer and Low-Temperature Growth of High-Mobility ZnO Films Takayoshi Katase,*,† Kenji Nomura,‡ Hiromichi Ohta,‡, Hiroshi Yanagi,† Toshio Kamiya,†,‡ Masahiro Hirano,‡,§ and Hideo Hosono†,‡,§ †
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Materials and Structures Laboratory, Mailbox R3-1, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan, ‡ERATO-SORST, Japan Science and Technology Agency (JST), in the Frontier Research Center, S2-6F East, Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan, and §Frontier Research Center, S2-6F East, Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan Received June 6, 2009; Revised Manuscript Received October 21, 2009
ABSTRACT: Atomically flat single-crystalline thin films of ScAlMgO4 (SCAM) were fabricated on yttria-stabilized zirconia (YSZ) (111) substrates by reactive solid-phase epitaxy using an ablation ceramic target with an optimized chemical composition. Owing to the good lattice matching, the SCAM layers enhanced two-dimensional growth of ZnO epitaxial films, suppressed the formation of threading dislocations at step edges, and provided larger Hall mobilities than those of ZnO films on YSZ and Al2O3 single-crystal substrates especially at low deposition temperatures
