Fabrication of CsxFA1–xPbI3 Mixed-Cation Perovskites via Gas

Nov 20, 2017 - Consequently, the optimum amount of Cs+ (x = 0.15) is verified, and Cs0.15FA0.85PbI3 shows the smallest unit cell volume and good moist...
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Fabrication of CsxFA1-xPbI3 Mixed-Cation Perovskites via Gas-Phase Assisted Compositional Modulation for Efficient and Stable Photovoltaic Devices Paifeng Luo, Shengwen Zhou, Yugang Zhou, Wei Xia, Lin Sun, Jigui Cheng, Chenxi Xu, and Yingwei Lu ACS Appl. Mater. Interfaces, Just Accepted Manuscript • DOI: 10.1021/acsami.7b12939 • Publication Date (Web): 20 Nov 2017 Downloaded from http://pubs.acs.org on November 21, 2017

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ACS Applied Materials & Interfaces

Fabrication of CsxFA1-xPbI3 Mixed-Cation Perovskites via Gas-Phase Assisted Compositional Modulation for Efficient and Stable Photovoltaic Devices Paifeng Luo*, Shengwen Zhou, Yugang Zhou, Wei Xia, Lin Sun, Jigui Cheng, Chenxi Xu, and Yingwei Lu Department of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China

*

corresponding author: Paifeng Luo

E-mail: [email protected] or [email protected] Tel: +86-551-62904566 Fax: +86-551-62905285

KEYWORDS: Perovskite solar cells; Stability; Phase-transition; Mixed-cation compositional modulation; Vapor deposition process

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ABSTRACT: Over the past few years, significant attention has been focused on HC(NH2)2PbI3 (FAPbI3) perovskite due to their reduced band gap and enhanced thermal stability compared with the most studied CH3NH3PbI3 (MAPbI3). However, FAPbI3 is sensitive to moisture and also encounters serious structural phase-transition from photoactive α-phase to photoinactive δ-phase. Herein, we first develop a novel FAI gas-phase assisted mixed-cation compositional modulation method to fabricate CsxFA1-xPbI3 perovskite solar cells (PSCs), and realize the structural stabilization of

α-phase FAPbI3 with the incorporation of smaller inorganic Cs+ ions. Through setting different Cs+ contents (x=0, 0.05, 0.10, 0.15, 0.20, 0.25, 0.30, 0.50) along with moderate FAI vapor deposition process, series of CsxFA1-xPbI3 films with consistent compositions are fabricated, which perfectly resolves the main blocking problems of conventional solution approach, such as difficulty in compositional control and rough film morphology. Meanwhile, we find that Cs+ amount is crucial for generating phase-pure CsxFA1-xPbI3 (0