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Ferroelectric Resistive Switching in High-Density Nanocapacitor Arrays Based on BiFeO3 Ultrathin Films and Ordered Pt Nanoelectrodes Zengxing Lu, Zhen Fan, Peilian Li, Guo Tian, Xiao Song, Zhongwen Li, Lina Zhao, Kangrong Huang, Fengyuan Zhang, Zhang Zhang, Min Zeng, Xingsen Gao, Jiajun Feng, Jianguo Wan, and Jun-Ming Liu ACS Appl. Mater. Interfaces, Just Accepted Manuscript • DOI: 10.1021/acsami.6b07792 • Publication Date (Web): 15 Aug 2016 Downloaded from http://pubs.acs.org on August 19, 2016
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ACS Applied Materials & Interfaces
Liu, Jun-Ming; Nanjing University, Laboratory of Solid State Microstructures
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Ferroelectric Resistive Switching in High-Density Nanocapacitor Arrays Based on BiFeO3 Ultrathin Films and Ordered Pt Nanoelectrodes Zengxing Lu, †,§ Zhen Fan,† Peilian Li,† Guo Tian,† Xiao Song,† Zhongwen Li,† Lina Zhao,† Kangrong Huang,† Fengyuan Zhang,† Zhang Zhang,† Min Zeng,† Xingsen Gao, *,† Jiajun Feng,§ Jianguo Wan§ and Junming Liu *,†,§
†
Institute for Advanced Materials and Laboratory of Quantum Engineering and
Quantum Materials, South China Normal University, Guangzhou 510006, China.
§
Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
*
Address correspondent to E-mail:
[email protected] *
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ACS Applied Materials & Interfaces
ABSTRACT: Ferroelectric resistive switching (RS), manifested as a switchable ferroelectric diode effect, was observed in well-ordered and high-density nanocapacitor arrays based on continuous BiFeO3 (BFO) ultrathin films and isolated Pt nanonelectrodes. The thickness of BFO films and the lateral dimension of Pt electrodes were aggressively scaled down to
