Editorial Cite This: ACS Appl. Mater. Interfaces 2018, 10, 25833−25833
www.acsami.org
Forum on Materials and Interfaces for Next-Generation Thin-Film Transistors
ACS Appl. Mater. Interfaces 2018.10:25833-25833. Downloaded from pubs.acs.org by 185.223.161.233 on 08/08/18. For personal use only.
R
ecently, there has been growing interest in thin-film transistor (TFT) technologies to meet industry demands for diverse display applications, including large-area highresolution displays, mobile displays, flexible displays, transparent displays, active-matrix organic light-emitting diode displays, and low-cost flexible Epaper displays. Moreover, applications of TFTs have been extended from displays to general large-area integrated electronics and sensors, which will enable low-cost and flexible design solutions. In China, research on TFTs has drawn increased attention over the past decade, and significant progress has been made from research in the region toward development of organic, amorphous metal oxide and nanostructured material semiconductor TFTs, including solution/printing-based TFTs. This issue of ACS Applied Materials & Interfaces features a short collection of articles from leading scientists in China who are conducting research in fields related to TFTs. The intent of the Forum is to highlight these scientists’ contributions to the field of TFTs and provide a broad overview of the current status and future directions for development of new TFTrelated materials, processing, and interface engineering techniques. The Forum contains two review articles, one that highlights recent advances in solution-processed metal oxide TFTs and a second that describes advances in printed TFT research specifically in China. The rest of the articles in the Forum are directed at more specific topics, including NiO nanowire TFTs, room-temperature-processed InGaZnO (IGZO)TFTs, and the effects of annealing technique on IGZO TFT performance. Two other articles focus on organic materials for TFTs, including one on ambipolar TFTs based on conjugated polymers and a second on the performance of a single-crystal-based transistor. The research highlighted here provides an example of the rapid advancements that are being made in the field of TFT materials, interfaces, and applications. We hope that these papers will be of interest to the readers of ACS Applied Materials & Interfaces, and that they stimulate further research and development in the field of TFTs.
■
Kirk S. Schanze, Editor-in-Chief AUTHOR INFORMATION
ORCID
Kirk S. Schanze: 0000-0003-3342-4080 Notes
Views expressed in this editorial are those of the author and not necessarily the views of the ACS.
Special Issue: Materials and Interfaces for Next Generation Thin Film Transistors Published: August 8, 2018 © 2018 American Chemical Society
25833
DOI: 10.1021/acsami.8b12147 ACS Appl. Mater. Interfaces 2018, 10, 25833−25833
