Addition/Correction pubs.acs.org/NanoLett
Correction to Sequence of Silicon Monolayer Structures Grown on a Ru Surface: from a Herringbone Structure to Silicene Li Huang, Yan-Fang Zhang, Yu-Yang Zhang, Wenyan Xu, Yande Que, En Li, Jin-Bo Pan, Ye-Liang Wang, Yunqi Liu, Shi-Xuan Du,* Sokrates T. Pantelides,* and Hong-Jun Gao* Nano Lett. 2017, 17 (2), 1161−1166. DOI: 10.1021/acs.nanolett.6b04804
T
he binding energy for a single Si atom at an FCC site was inadvertently quoted as that of a Si atom at an HCP site in the original paper. The related sentence is on page 1162: “Whereas an isolated Si atom binds at a hexagonal-close-packed (HCP) hollow site with a binding energy of 4.95 eV, forming Si chains by occupying neighboring HCP hollow sites increases the binding to 5.41 eV/Si atom”. The revised sentence with the correct number is as follows: Whereas an isolated Si atom binds at a hexagonal-closepacked (HCP) hollow site with a binding energy of 5.38 eV, forming Si chains by occupying neighboring HCP hollow sites increases the binding to 5.41 eV/Si atom. The analysis and conclusions of the paper remain unaffected. We thank Professor Robert Kucharczyk and Dr. Rafal Topolnicki (University of Wroclaw) for bringing this to our attention.
Published: May 23, 2017 © 2017 American Chemical Society
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DOI: 10.1021/acs.nanolett.7b02009 Nano Lett. 2017, 17, 3991−3991
