Research Article Cite This: ACS Appl. Mater. Interfaces XXXX, XXX, XXX-XXX
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High-Performance Ultraviolet-to-Infrared Broadband Perovskite Photodetectors Achieved via Inter-/Intraband Transitions Norah Alwadai,†,‡ Md Azimul Haque,† Somak Mitra,† Tahani Flemban,† Yusin Pak,† Tom Wu,† and Iman Roqan*,† †
King Abdullah University of Science and Technology (KAUST), Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia ‡ Department of Physics, College of Sciences, Princess Nourah bint Abdulrahman University (PNU), Riyadh 11671, Saudi Arabia S Supporting Information *
ABSTRACT: A high-performance vertically injected broadband UV-toIR photodetector based on Gd-doped ZnO nanorods (NRs)/ CH3NH3PbI3 perovskite heterojunction was fabricated on metal substrates. Our perovskite-based photodetector is sensitive to a broad spectral range, from ultraviolet to infrared light region (λ = 250−1357 nm). Such structure leads to a high photoresponsivity of 28 and 0.22 A/ W, for white light and IR illumination, respectively, with high detectivity values of 1.1 × 1012 and 9.3 × 109 Jones. Optical characterizations demonstrate that the IR detection is due to intraband transition in the perovskite material. Metal substrate boosts carrier injection, resulting in higher responsivity compared to the conventional devices grown on glass, whereas the presence of Gd increases the ZnO NRs performance. For the first time, the perovskite-based photodetector is demonstrated to extend its detection capability to IR (>1000 nm) with high room temperature responsivity across the detected spectrum, leading to a high-performance ingenious cost-effective UV-to-IR broadband photodetector design for large-scale applications. KEYWORDS: (Perovskite, ZnO, metal substrate, intraband absorption, infrared detection)
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INTRODUCTION Broadband photodetectors with sensitivity over the entire spectrum from the UV to IR light region have gained significant attention in several fields due to the wide range of their potential applications, such as video imaging, optical communications, environmental monitoring, interconnectivity in biomedical sensing, and remote sensing,1−4 which has led to the development of broadband photodetectors. The discovery of solution-processed organometallic halide perovskites (MAPbX3, X = I, Br, Cl) provides a promising route for fabricating high-performance applications, such as solar cells, transistors, and photodetectors5 at a relatively low cost. Among these organometallic halide perovskites, CH3NH3PbI3, methylammonium lead iodide (MAPbI3), is particularly relevant owing to its appropriate direct bandgap,6 large absorption coefficient,7 long-range balanced electron- and hole-transport lengths,8,9 and high charge carrier mobilities.9 Xin et al. were the first to produce an organic-halide photodetector by one-step solution deposition that exhibited reasonable sensitivity.10 Strong photocurrent multiplication ability of the CH3NH3PbI3 perovskite has been reported, which justifies its application as a photodetector.11 However, most of the current photodetectors have sub-band detection spectral regions (such as visible light,12 UV light,13 and infrared14) that can be a limiting factor in some © XXXX American Chemical Society
applications. It is noteworthy that there are several oxide perovskites, which have been explored extensively as UV photodetectors.15,16 In contrast to hybrid perovskites, these oxide perovskites are generally insulating with wide bandgaps, making them particularly suitable for visible-blind UV photodetectors.17 Furthermore, broadband photodetectors based on inorganic semiconductor thin films are not practical due to the high cost of fabrication and processing, lattice-mismatch between the layers, slow response and low absorption coefficient over the entire spectrum.18 Moreover, none of the photodetector devices based on perovskite developed thus far have shown IR detection capability (>1000 nm). Perovskitebased near-infrared (NIR) (1000 nm) with high photoresponsivity comparable to the commercial IR detectors. Our device exhibits promising properties, such as high photoresponsivity and high detectivity in both white light and infrared spectral region. The present study thus paves the way for developing high-performance, low-cost, and flexible large-scale UV-to-IR broadband photodetectors with high responsivity over the entire light spectrum.
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ASSOCIATED CONTENT
* Supporting Information S
The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsami.7b09705. The cross-sectional SEM image of the device structure; the absorption spectrum and XRD patterns of CH3NH3PbI3 perovskite on glass substrate (PDF)
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AUTHOR INFORMATION
Corresponding Author
*E-mail:
[email protected]. ORCID
Tom Wu: 0000-0003-0845-4827 Iman Roqan: 0000-0001-7442-4330 Author Contributions
All authors have given approval to the final version of the manuscript. Notes
The authors declare no competing financial interest.
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ACKNOWLEDGMENTS We thank KAUST for the financial support. REFERENCES
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DOI: 10.1021/acsami.7b09705 ACS Appl. Mater. Interfaces XXXX, XXX, XXX−XXX
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DOI: 10.1021/acsami.7b09705 ACS Appl. Mater. Interfaces XXXX, XXX, XXX−XXX
