Letter pubs.acs.org/NanoLett
Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics Jiang Pu,† Yohei Yomogida,†,‡ Keng-Ku Liu,§ Lain-Jong Li,*,§ Yoshihiro Iwasa,∥,⊥ and Taishi Takenobu*,† †
Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan § Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 11529, Taiwan ∥ Correlated Electron Research Group, RIKEN, Wako 351-0198, Japan ⊥ Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan ‡
S Supporting Information *
ABSTRACT: Molybdenum disulfide (MoS2) thin-film transistors were fabricated with ion gel gate dielectrics. These thinfilm transistors exhibited excellent band transport with a low threshold voltage (
