Research Article www.acsami.org
Highly Stable and Effective Doping of Graphene by Selective Atomic Layer Deposition of Ruthenium Minsu Kim,†,‡ Ki-Ju Kim,†,‡ Seung-Joon Lee,# Hyun-Mi Kim,† Seong-Yong Cho,§ Min-Sik Kim,† Soo-Hyun Kim,# and Ki-Bum Kim*,†,¶ †
Department of Materials Science and Engineering and ¶Research Institute of Advanced Materials (RIAM), Seoul National University, 1 Gwanakro, Gwanakgu, Seoul 08826, Korea # School of Materials Science and Engineering, Yeungnam University, 214-1 Dae-dong, Gyeongsan-City 38541, Korea § Department of Materials Science and Engineering, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States S Supporting Information *
ABSTRACT: The sheet resistance of graphene synthesized by chemical vapor deposition is found to be significantly reduced by the selective atomic layer deposition (ALD) of Ru onto defect sites such as wrinkles and grain boundaries. With 200 ALD cycles, the sheet resistance is reduced from ∼500 to
