J. Phys. Chem. 1995,99, 7871-7874
7871
Ideal Behavior at Illuminated Semiconductor-Liquid Junctions Yossi Rosenwaks,+Brad R. Thacker, Kris Bertness, and Arthur J. Nozik* National Renewable Energy Laboratory, Golden, Colorado 80401 Received: January 30, 1995; In Final Form: March 28, 1995@
Photocurrent-voltage characteristics that show a nearly ideal dependence on the concentration of a nonadsorbed, outer-sphere redox acceptor (cobaltocenium) have been achieved with a novel photoelectrode structure that consists of a thin (30-50 A) epilayer of GaInP2 deposited on a thick (5000 A) p-GaAs epilayer. The thin GaInPz layer produces nearly perfect passivation of the GaAs surface (resulting in a surface recombination velocity
