In Situ Thermal Decomposition of Exfoliated Two ... - ACS Publications

Feb 9, 2015 - From in situ scanning/transmission electron microscopy, decomposition of 2D ... Electronic Properties of van der Waals Heterostructure o...
1 downloads 0 Views 7MB Size
Letter pubs.acs.org/JPCL

In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus Xiaolong Liu,†,⊥ Joshua D. Wood,‡,⊥ Kan-Sheng Chen,‡ EunKyung Cho,‡ and Mark C. Hersam*,†,‡,§,∥ †

Graduate Program in Applied Physics, Northwestern University, Evanston, Illinois 60208, United States Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States § Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States ∥ Department of Medicine, Northwestern University, Evanston, Illinois 60208, United States ‡

S Supporting Information *

ABSTRACT: With a semiconducting band gap and high charge carrier mobility, two-dimensional (2D) black phosphorus (BP)often referred to as phosphoreneholds significant promise for next generation electronics and optoelectronics. However, as a 2D material, it possesses a higher surface area to volume ratio than bulk BP, suggesting that its chemical and thermal stability will be modified. Herein, an atomic-scale microscopic and spectroscopic study is performed to characterize the thermal degradation of mechanically exfoliated 2D BP. From in situ scanning/transmission electron microscopy, decomposition of 2D BP is observed to occur at ∼400 °C in vacuum, in contrast to the 550 °C bulk BP sublimation temperature. This decomposition initiates via eye-shaped cracks along the [001] direction and then continues until only a thin, amorphous red phosphorus like skeleton remains. In situ electron energy loss spectroscopy, energy-dispersive X-ray spectroscopy, and energy-loss near-edge structure changes provide quantitative insight into this chemical transformation process.

T

wo-dimensional (2D) nanomaterials including graphene,1 hexagonal boron nitride (h-BN),2 MoS 2,3,4 sp2/sp3 silicon,5 and black phosphorus (BP)6−25 have attracted significant interest in electronics and photonics applications. Because these materials possess high surface area to volume ratios, their surface chemistries need to be carefully considered when developing device processing and fabrication methods. Toward this end, previous work has found that graphene and hBN are chemically and thermally robust,1,2 whereas 2D MoS2 undergoes chemical transformations during chemical exfoliation26 and high temperature annealing.4 In contrast, as one of the newest members of the 2D nanomaterial portfolio,13,15,27 little is known about the chemical and thermal stability of 2D BP. Although bulk BP is the most thermodynamically stable phosphorus allotrope, it can suffer from electrochemical28 and ambient oxidation.23,29−31 Because nanomaterials often show lower decomposition temperatures (e.g., carbon nanotubes,32 graphene nanoribbons,33 and Al nanoparticles34) compared to their bulk counterparts, similar effects can be expected for 2D BP. Furthermore, even for bulk BP, there is little consensus on basic thermal stability parameters. For example, the reported melting temperature of bulk BP varies from 600 °C35−37 to >1000 °C.38 Therefore, it is important to clarify thermal phenomena in 2D BP before it can be effectively employed in applications. © XXXX American Chemical Society

Herein, we quantitatively assess the thermal decomposition of mechanically exfoliated BP. In particular, in situ scanning/ transmission electron microscopy (S/TEM) is performed on BP flakes transferred onto TEM grids, allowing for chemical, morphological, and crystallographic decomposition intermediates to be determined by selected area diffraction (SAD), electron energy loss spectroscopy (EELS), energy-dispersive Xray spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS). These morphological and spectroscopic measurements reveal that the in situ sublimation temperature of exfoliated 2D BP is ∼400 °C with the resulting eye-shaped defects proceeding along the [001] direction and ultimately culminating in a redphosphorus-like skeleton. Figure 1a reveals a bright field TEM image for an exfoliated BP flake, where the orthorhombic crystalline character is confirmed in the inset SAD pattern. Figure 1b is a highmagnification image of BP showing lattice fringes. To minimize the influence of the electron beam while maintaining spatial resolution, a 120 to 200 keV acceleration voltage is used, and the sample is moved into the beam only when imaging (see Supporting Information for more details). The BP flakes are stored in dry N2 until TEM is performed. Figure 1a,b indicates Received: January 8, 2015 Accepted: February 9, 2015

773

DOI: 10.1021/acs.jpclett.5b00043 J. Phys. Chem. Lett. 2015, 6, 773−778

Letter

The Journal of Physical Chemistry Letters

(Figure 1g). EDS spectra for the flake before (Figure 1h) and after (Figure 1i) annealing exhibit a P Kα peak at 2 keV that decreases in intensity. This decrease can be attributed to the lower interaction volume in thinner BP flakes, as detailed below. Figure 2 considers the dynamics of BP amorphization at 400 °C, using low magnification images of the flake from Figure 1.

Figure 1. TEM images of exfoliated BP and in situ heating of BP. (a) Low-magnification TEM bright field image of a BP flake. Scale bar is 2 μm. Inset: Selected area diffraction (SAD) pattern of the flake. Scale bar is 5 nm−1. (b) High-magnification TEM bright field image of BP showing lattice fringes. Scale bar is 2 nm. (c−g) TEM bright field images (false colored) of a thin BP flake after (c) introduction to the TEM and heating at (d) 200 °C, (e) 300 °C, (f) 400 °C, and (g) 500 °C, respectively. All heating times are 20 min long. Scale bars are 200 nm. Insets: SAD patterns for each heating stage. Scale bars are 5 nm−1. Irregular patterns and amorphization occur past 400 °C. EDS spectra of BP flake (h) before and (i) after 400 °C in situ heating. In both cases, a P Kα peak is apparent.

Figure 2. Dynamics of in situ BP sublimation. Low-magnification TEM images for annealing conditions of (a) unannealed, (b) 20 min at 200 °C, (c) 20 min at 300 °C, (d) 5 min at 400 °C, (e) 8 min at 400 °C, (f) 12 min at 400 °C, (g) 20 min at 400 °C, (h) 20 min at 500 °C, respectively. When the flake is heated at 400 °C for 5 min, the flake begins to decompose, as denoted by the yellow and red arrows in (d− f). The degradation continues until 500 °C, after which a thin skeleton remains. Scale bars are 2 μm.

that the BP flakes are crystalline with no entrapped species29 or ambient degradation apparent.23,28,30 Atomic force microscopy (AFM) measurements also confirm that the sample preparation method in this study does not cause flake degradation (Supporting Information Figure S1). Comparatively, BP flakes exposed to ambient conditions for several days show entrapped species (Supporting Information Figure S2). Figure 1c−g shows the edge of a BP flake at different annealing conditions with the insets providing the corresponding SAD patterns. Compared with the unannealed case (Figure 1c), the wrinkles in the BP disappear, with the flake becoming flatter after 20 min of 200 °C annealing (Figure 1d). The flake appears unchanged after additional 300 °C annealing for 20 min (Figure 1e) with SAD patterns showing invariant BP crystal orientation. After annealing at 400 °C for 20 min (Figure 1f), irregular patterns appear, with the SAD pattern indicating BP amorphization. The flake remains amorphous after 500 °C annealing for 20 min

Figure 2a−c highlights the invariance of the flake to heating up to 300 °C. However, when the flake is heated at 400 °C for 5 min, the flake edge retracts, leaving a thin layer behind (Figure 2d). Additional BP decomposition proceeds from the edges until 20 min exposure (Figure 2e−g), after which a thin skeleton predominantly remains. This thin skeleton withstands an additional 20 min of annealing at 500 °C (Figure 2h) where it remains continuous over the holes of the Quantifoil TEM support. The SAD patterns and EDS spectra in Figure 1f−i reveal that the skeleton is an amorphous phosphorus structure. Because a phosphorus skeleton remains and no liquid-like features appear during decomposition, the BP degradation in Figure 2d−g appears to proceed by BP sublimation and not melting. Additionally, since the BP flakes transferred onto the TEM grid are 10 to 40 nm thick, as seen in AFM and confirmed by calculations based on TEM contrast39 (Supporting Information Figure S3), their suppressed thermal decom774

DOI: 10.1021/acs.jpclett.5b00043 J. Phys. Chem. Lett. 2015, 6, 773−778

Letter

The Journal of Physical Chemistry Letters

Figure 3. Formation of eye-shaped cracks in BP during sublimation. (a−c) Zoomed-in image of the flake in Figure 2, heated for 5, 8, and 12 min at 400 °C, respectively. Eye-shaped cracks (yellow) form and grow. The blue arrow indicates the propagation direction. (d) SAD pattern of the flake at 300 °C, showing the [001] crack propagation direction. (e, f) Temperature-induced increase in BP lattice parameters a and c. Bulk values from Madelung.38 (g) In-plane lattice schematic for BP. (h−j) Snapshots from a BP sublimation model, describing the formation of eye-shaped cracks along the [001] direction (blue arrow).

appear to be the main cause for the anisotropic, eye-shaped cracks. However, the anisotropic, buckled atomic structure (Figure 3g) of BP suggests a mechanism for the eye-shaped crack formation. For bulk BP, each phosphorus atom has three single bonds (see Supporting Information Figure S4), with two inplane bonds and a third out-of-plane bond.47 Assuming that sublimation begins with a vacancy defect,44 denoted by a green circle in Figure 3h, BP decomposition then continues by removal of P atoms along the perimeter. The perimeter P atoms surrounding the growing crack fall into several categories including P atoms with only one bond to the surrounding crystal and P atoms with two bonds to the surrounding crystal. The second category can be further subdivided into P atoms with two in-plane bonds and P atoms with one in-plane bond and one out-of-plane bond. Assuming that P atoms with only one bond desorb first followed by P atoms with two in-plane bonds and finally P atoms with one in-plane bond and one outof-plane bond, then the crack will evolve in an anisotropic manner that is consistent with the observed eye-shape along the [001] direction. Snapshots of this proposed sublimation model are shown in Figure 3h−j with further details included in the Supporting Information (Figure S5). This model works with arbitrary initial crack directions and irregular vacancy geometries (Supporting Information Figure S6). For BP multilayers, formation of cracks in one layer will expose the next inner layer, which initiates sublimation at the same point. Hence, sublimation of BP multilayers will also exhibit eyeshaped cracks, as observed experimentally in Figure 3.

position temperature relative to the melting point of bulk BP is consistent with other low dimensional nanomaterials with high surface area to volume ratios.40−42 BP sublimation occurs at flake edges and defects, and then propagates as eye-shaped cracks. Figure 3a−c gives higher magnification images of this crack evolution as the flake is heated to 400 °C for 5, 8, and 12 min, respectively. In Figure 3d, a SAD pattern for this flake (taken at 300 °C) indicates that all cracks are along the [001] direction. Similar to the sublimation of graphene,43,44 cracks grow larger and coalesce, but unlike graphene, the BP cracks maintain a regular shape during sublimation. As such, the crystallographic structure of BP appears important in the decomposition mechanism. We first consider the effects of the a−c plane (hereafter “in-plane”) thermal expansion as the source of the oriented cracks. In light of the relatively few and conflicting reports on the coefficients of thermal expansion (CTE) for BP,38,45 we estimate CTE values for the a and c lattice parameters using our SAD patterns. Figure 3e−f examines six BP flakes and determine average a and c values from the SAD data. The error bar for each data point consists of standard deviation and TEM system error, estimated to be ±1%.46 Bulk BP lattice parameters at elevated temperatures are calculated based on bulk BP CTE values from the literature.38 We find that the CTE values of exfoliated BP flakes along the [100] and [001] directions are αa = (90.3 ± 6.4) × 10−6/°C and αc = (93.2 ± 12.7) × 10−6/°C, 3- and 2-fold higher than reported values for bulk BP,38 respectively. Because the two in-plane CTE values for exfoliated BP flakes are nearly identical, thermal expansion does not 775

DOI: 10.1021/acs.jpclett.5b00043 J. Phys. Chem. Lett. 2015, 6, 773−778

Letter

The Journal of Physical Chemistry Letters

Figure 4. In situ STEM heating of BP and corresponding EELS spectra. STEM transmitted electron (TE) images of BP after (a) introduction to the STEM and heated at (b) 200 °C for 20 min, (c) 300 °C for 20 min, (d) 400 °C for 2 min, (e) 400 °C for 10 min, (f) 400 °C for 20 min, and (g) 500 °C for 20 min. Consistent with in situ TEM heating, BP sublimation begins at ∼400 °C. (h) and (i) STEM TE image of BP exposed to ambient for 5 min and 24 h after in situ heating, respectively. Scale bars are 2 μm. (j) P L edge and derivative EELS spectra during each stage of in situ heating. P L2,3 ELNES line shapes qualitatively change after 400 °C.

before annealing from the BP preparation process, it is more evident after ambient exposure (Supporting Information Figure S7). Similarly, XPS data taken after ambient exposure (Supporting Information Figure S8) shows oxygenated P.29,51 The TEM images in Supporting Information Figures S9, S10, and S11 further highlight this BP chemical decomposition. A previous study36 showed that heating bulk BP to 777 °C at ∼0.5 GPa pressure produces a 0.3−0.5 mm thick layer of red P on the BP crystal surface. Brazhkin et al. also produced a phase diagram for bulk black and red P, showing a phase transition between the black and red phases at 597 °C. This solid red P exists until 620 °C without applied pressure. In general, red P is a highly reactive, amorphous structure. These characteristics suggest that the thin skeleton remaining after BP decomposition is related to red P. Furthermore, previous work has shown that BP degrades in ambient conditions.23,29 Oxygenated H2O has been suggested as a source for BP ambient degradation,29 and red P is even more hygroscopic than BP. The rapid gettering of oxygenated H2O by red P following ambient exposure is a plausible explanation for the observed increase in thickness observed in Figure 4h,i. In summary, we have employed a suite of atomically precise microscopy and spectroscopy techniques to characterize the in situ thermal decomposition of exfoliated BP at ∼400 °C. The high surface area and nanoscale thickness of exfoliated BP likely

Concurrent in situ STEM heating and EELS measurements provide chemical information for the BP decomposition process. Figure 4a−g contains the transmission electron (TE) images for a range of annealing conditions. After 20 min annealing at 500 °C, the sample is cooled in situ to 37 °C, upon which it is exposed to ambient conditions (∼26 °C, relative humidity ∼38%) for 5 min. The dark contrast in the TE images in Figure 4h implies that the flake has become thicker after ambient exposure. In addition, the flake is invariant to additional ambient treatment, as evidenced by the 24 h ambient exposure preceding the image in Figure 4i. Figure 4j shows the EELS spectra taken at different annealing conditions for the extracted and normalized P L2,3 edge at 132 eV. The EELS spectra for the O K edge at 532 eV are provided in Supporting Information Figure S7. To better highlight the change in the energy-loss near-edge structure (ELNES), the derivatives of the EELS P L2,3 edge are presented in Figure 4j. The existence of the P L2,3 edge after 400 °C annealing indicates that the thin skeleton contains P, in agreement with EDS spectrum shown in Figure 1i. The ELNES of the P L2,3 is invariant before 400 °C annealing and changes its line shape qualitatively at 400 °C, denoting a different P bonding state.48−50 The P L2,3 ELNES modifications after ambient exposure are negligible, implying a similar P oxidation state before and after ambient. Although the O K edge exists 776

DOI: 10.1021/acs.jpclett.5b00043 J. Phys. Chem. Lett. 2015, 6, 773−778

Letter

The Journal of Physical Chemistry Letters

(5) Dai, J.; Zhao, Y.; Wu, X.; Yang, J.; Zeng, X. C. Exploration of Structures of Two-Dimensional Boron−Silicon Compounds with sp2 Silicon. J. Phys. Chem. Lett. 2013, 4, 561−567. (6) Dai, J.; Zeng, X. C. Bilayer Phosphorene: Effect of Stacking Order on Bandgap and Its Potential Applications in Thin-Film Solar Cells. J. Phys. Chem. Lett. 2014, 5, 1289−1293. (7) Zhang, S.; Yang, J.; Xu, R.; Wang, F.; Li, W.; Ghufran, M.; Zhang, Y. W.; Yu, Z.; Zhang, G.; Qin, Q.; et al. Extraordinary Photoluminescence and Strong Temperature/Angle-Dependent Raman Responses in Few-Layer Phosphorene. ACS Nano 2014, 8, 9590− 9596. (8) Xia, F.; Wang, H.; Jia, Y. Rediscovering Black Phosphorus as an Anisotropic Layered Material for Optoelectronics and Electronics. Nat. Commun. 2014, 5, 4458. (9) Rodin, A. S.; Carvalho, A.; Castro Neto, A. H. Strain-Induced Gap Modification in Black Phosphorus. Phys. Rev. Lett. 2014, 112, 176801. (10) Qiao, J.; Kong, X.; Hu, Z. X.; Yang, F.; Ji, W. High-Mobility Transport Anisotropy and Linear Dichroism in Few-Layer Black Phosphorus. Nat. Commun. 2014, 5, 4475. (11) Low, T.; Roldan, R.; Wang, H.; Xia, F.; Avouris, P.; Moreno, L. M.; Guinea, F. Plasmons and Screening in Monolayer and Multilayer Black Phosphorus. Phys. Rev. Lett. 2014, 113, 106802. (12) Liu, Y.; Xu, F.; Zhang, Z.; Penev, E. S.; Yakobson, B. I. TwoDimensional Mono-Elemental Semiconductor with Electronically Inactive Defects: The Case of Phosphorus. Nano Lett. 2014, 14, 6782−6786. (13) Liu, H.; Neal, A. T.; Zhu, Z.; Luo, Z.; Xu, X. F.; Tomanek, D.; Ye, P. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility. ACS Nano 2014, 8, 4033−4041. (14) Liu, H.; Du, Y.; Deng, Y.; Ye, P. D. Semiconducting Black Phosphorus: Synthesis, Transport Properties and Electronic Applications. Chem. Soc. Rev. 2015, DOI: 10.1039/C4CS00257A. (15) Li, L.; Yu, Y.; Ye, G. J.; Ge, Q.; Ou, X.; Wu, H.; Feng, D.; Chen, X. H.; Zhang, Y. Black Phosphorus Field-Effect Transistors. Nat. Nanotechnol. 2014, 9, 372−377. (16) Kou, L.; Frauenheim, T.; Chen, C. Phosphorene as a Superior Gas Sensor: Selective Adsorption and Distinct I−V Response. J. Phys. Chem. Lett. 2014, 5, 2675−2681. (17) Guan, J.; Zhu, Z.; Tomanek, D. Phase Coexistence and MetalInsulator Transition in Few-Layer Phosphorene: A Computational Study. Phys. Rev. Lett. 2014, 113, 046804. (18) Fei, R.; Faghaninia, A.; Soklaski, R.; Yan, J. A.; Lo, C.; Yang, L. Enhanced Thermoelectric Efficiency via Orthogonal Electrical and Thermal Conductances in Phosphorene. Nano Lett. 2014, 14, 6393− 6399. (19) Engel, M.; Steiner, M.; Avouris, P. Black Phosphorus Photodetector for Multispectral, High-Resolution Imaging. Nano Lett. 2014, 14, 6414−6417. (20) Du, Y.; Liu, H.; Deng, Y.; Ye, P. D. Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling. ACS Nano 2014, 8, 10035−10042. (21) Deng, Y.; Luo, Z.; Conrad, N. J.; Liu, H.; Gong, Y.; Najmaei, S.; Ajayan, P. M.; Lou, J.; Xu, X.; Ye, P. D. Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction p-n Diode. ACS Nano 2014, 8, 8292−8299. (22) Das, S.; Demarteau, M.; Roelofs, A. Ambipolar Phosphorene Field Effect Transistor. ACS Nano 2014, 8, 11730−11738. (23) Castellanos-Gomez, A.; Vicarelli, L.; Prada, E.; Island, J. O.; Narasimha-Acharya, K. L.; Blanter, S. I.; Groenendijk, D. J.; Buscema, M.; Gary, A. S.; Alvarez, J. V.; et al. Isolation and Characterization of Few-Layer Black Phosphorus. 2D Mater. 2014, 1, 025001. (24) Buscema, M.; Groenendijk, D. J.; Steele, G. A.; van der Zant, H. S.; Castellanos-Gomez, A. Photovoltaic Effect in Few-Layer Black Phosphorus PN Junctions Defined by Local Electrostatic Gating. Nat. Commun. 2014, 5, 4651. (25) Buscema, M.; Groenendijk, D. J.; Blanter, S. I.; Steele, G. A.; van der Zant, H. S.; Castellanos-Gomez, A. Fast and Broadband

explains the lower decomposition temperature relative to bulk BP. Sublimation is initiated with the formation of eye-shaped cracks along the [001] direction in a manner consistent with the anisotropic in-plane atomic structure of BP. After thermal decomposition, an amorphous red P like skeleton persists, as inferred from ambient exposure, SAD, EELS, and XPS data. Overall, this study provides insight into the thermal limits of 2D BP, thus facilitating the development of suitable processing methods for BP-based devices.



ASSOCIATED CONTENT

S Supporting Information *

Experimental methods, AFM images of transferred BP flakes and a degraded BP flake, TEM images of entrapped species within ambient exposed BP, thickness determination from AFM and TEM images, bonding configuration for BP, frameby-frame illustration of the crack growth process, growth of cracks from arbitrary small defects, EELS O K edge of BP during in situ heating and after ex situ exposure, XPS spectrum of a heated BP TEM sample after ex situ exposure, TEM images of a pristine flake heated at 350 °C for 1 hour, TEM bright field images of flakes heated at different temperatures, TEM and SAD imaging for flakes that underwent 200 °C ex situ heating. This document is available free of charge via the Internet at http://pubs.acs.org.



AUTHOR INFORMATION

Corresponding Author

*E-mail: [email protected]. Author Contributions ⊥

These authors (X.L. and J.D.W.) contributed equally to this work. Notes

The authors declare no competing financial interest.



ACKNOWLEDGMENTS This research was supported by the Office of Naval Research (N00014-14-1-0669) and the W. M. Keck Foundation. The work made use of the NUANCE Center, which has received support from the MRSEC (NSF DMR-1121262), State of Illinois, and Northwestern University. The authors kindly thank Dr. Jinsong Wu, Dr. Shuyou Li, Dr. Langli Luo, and Dr. Fengyuan Shi for their help with TEM measurements.



REFERENCES

(1) Liu, Z.; Ma, L.; Shi, G.; Zhou, W.; Gong, Y.; Lei, S.; Yang, X.; Zhang, J.; Yu, J.; Hackenberg, K. P.; et al. In-Plane Heterostructures of Graphene and Hexagonal Boron Nitride with Controlled Domain Sizes. Nat. Nanotechnol. 2013, 8, 119−124. (2) Gibb, A. L.; Alem, N.; Chen, J.-H.; Erickson, K. J.; Ciston, J.; Gautam, A.; Linck, M.; Zettl, A. Atomic Resolution Imaging of Grain Boundary Defects in Monolayer Chemical Vapor Deposition-Grown Hexagonal Boron Nitride. J. Am. Chem. Soc. 2013, 135, 6758−6761. (3) Kim, I. S.; Sangwan, V. K.; Jariwala, D.; Wood, J. D.; Park, S.; Chen, K.-S.; Shi, F.; Ruiz-Zepeda, F.; Ponce, A.; Jose-Yacaman, M.; et al. Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS2. ACS Nano 2014, 8, 10551−10558. (4) Liu, K.-K.; Zhang, W.; Lee, Y.-H.; Lin, Y.-C.; Chang, M.-T.; Su, C.-Y.; Chang, C.-S.; Li, H.; Shi, Y.; Zhang, H.; et al. Growth of LargeArea and Highly Crystalline MoS2 Thin Layers on Insulating Substrates. Nano Lett. 2012, 12, 1538−1544. 777

DOI: 10.1021/acs.jpclett.5b00043 J. Phys. Chem. Lett. 2015, 6, 773−778

Letter

The Journal of Physical Chemistry Letters Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors. Nano Lett. 2014, 14, 3347−3352. (26) Eda, G.; Yamaguchi, H.; Voiry, D.; Fujita, T.; Chen, M.; Chhowalla, M. Photoluminescence from Chemically Exfoliated MoS2. Nano Lett. 2011, 11, 5111−5116. (27) Wang, H.; Wang, X.; Xia, F.; Wang, L.; Jiang, H.; Xia, Q.; Chin, M. L.; Dubey, M.; Han, S. J. Black Phosphorus Radio-Frequency Transistors. Nano Lett. 2014, 14, 6424−6429. (28) Yau, S.-L.; Moffat, T. P.; Bard, A. J.; Zhang, Z.; Lerner, M. M. STM of the (010) Surface of Orthorhombic Phosphorus. Chem. Phys. Lett. 1992, 198, 383−388. (29) Wood, J. D.; Wells, S. A.; Jariwala, D.; Chen, K.-S.; Cho, E.; Sangwan, V. K.; Liu, X.; Lauhon, L. J.; Marks, T. J.; Hersam, M. C. Effective Passivation of Exfoliated Black Phosphorus Transistors Against Ambient Degradation. Nano Lett. 2014, 14, 6964−6970. (30) Koenig, S. P.; Doganov, R. A.; Schmidt, H.; Castro Neto, A. H.; Ö zyilmaz, B. Electric Field Effect in Ultrathin Black Phosphorus. Appl. Phys. Lett. 2014, 104, 103106. (31) Kim, J.-S.; Liu, Y.; Zhu, W.; Kim, S.; Wu, D.; Tao, L.; Dodabalapur, A.; Lai, K.; Akinwande, D. Toward Air-Stable Multilayer Phosphorene Thin-Films and Transistors. 2014, arXiv:1412.0355. arXiv.org e-Print archive. http://arxiv.org/abs/1412.0355 (accessed Jan 2015). (32) Liao, A.; Alizadegan, R.; Ong, Z.-Y.; Dutta, S.; Xiong, F.; Hsia, K. J.; Pop, E. Thermal Dissipation and Variability in Electrical Breakdown of Carbon Nanotube Devices. Phys. Rev. B 2010, 82, 205406. (33) Jia, X.; Hofmann, M.; Meunier, V.; Sumpter, B. G.; CamposDelgado, J.; Romo-Herrera, J. M.; Son, H.; Hsieh, Y.-P.; Reina, A.; Kong, J.; et al. Controlled Formation of Sharp Zigzag and Armchair Edges in Graphitic Nanoribbons. Science 2009, 323, 1701−1705. (34) Sun, J.; Simon, S. L. The Melting Behavior of Aluminum Nanoparticles. Thermochim. Acta 2007, 463, 32−40. (35) Akahama, Y.; Utsumi, W.; Endo, S.; Kikegawa, T.; Iwasaki, H.; Shimomura, O.; Yagi, T.; Akimoto, S. Melting Curve of Black Phosphorous. Phys. Lett. A 1987, 122, 129−131. (36) Brazhkin, V. V.; Zerr, A. J. Relative Stability of Red and Black Phosphorus at P-Less-Than-1 GPa. J. Mater. Sci. 1992, 27, 2677−2681. (37) Kikegawa, T.; Iwasaki, H.; Fujimura, T.; Endo, S.; Akahama, Y.; Akai, T.; Shimomura, O.; Yagi, T.; Akimoto, S.; Shirotani, I. Synchrotron-Radiation Study of Phase Transitions in Phosphorus at High Pressures and Temperatures. J. Appl. Crystallogr. 1987, 20, 406− 410. (38) Madelung, O. Semiconductors: Data Handbook, 3rd ed.; Springer: Berlin, 2004. (39) Williams, D. B.; Carter, C. B. Transmission Electron Microscopy: A Textbook for Materials Science, 2nd ed.; Springer: New York ; London, 2009. (40) Wang, Z. L.; Petroski, J. M.; Green, T. C.; El-Sayed, M. A. Shape Transformation and Surface Melting of Cubic and Tetrahedral Platinum Nanocrystals. J. Phys. Chem. B 1998, 102, 6145−6151. (41) Mohamed, M. B.; Wang, Z. L.; El-Sayed, M. A. TemperatureDependent Size-Controlled Nucleation and Growth of Gold Nanoclusters. J. Phys. Chem. A 1999, 103, 10255−10259. (42) Sun, X. H.; Yu, B.; Ng, G.; Meyyappan, M. One-Dimensional Phase-Change Nanostructure: Germanium Telluride Nanowire. J. Phys. Chem. C 2007, 111, 2421−2425. (43) Huang, J. Y.; Ding, F.; Yakobson, B. I.; Lu, P.; Qi, L.; Li, J. In Situ Observation of Graphene Sublimation and Multi-Layer Edge Reconstructions. Proc. Natl. Acad. Sci. U.S.A. 2009, 106, 10103−10108. (44) Huang, J. Y.; Qi, L.; Li, J. In Situ Imaging of Layer-by-Layer Sublimation of Suspended Graphene. Nano Res. 2010, 3, 43−50. (45) Riedner, R. J.; Srinivasa, S. R.; Cartz, L.; Worlton, T. G.; Klinger, R.; Beyerlein, R. Anisotropic Thermal Expansion and Compressibility of Black Phosphorus. AIP Conf. Proc. 1974, 17, 8−20. (46) Mugnaioli, E.; Capitani, G.; Nieto, F.; Mellini, M. Accurate and Precise Lattice Parameters by Selected-Area Electron Diffraction in the Transmission Electron Microscope. Am. Mineral. 2009, 94, 793−800.

(47) Brown, A.; Rundqvist, S. Refinement of the Crystal Structure of Black Phosphorus. Acta Crystallogr. 1965, 19, 684−685. (48) Mizoguchi, T.; Tanaka, I.; Mizuno, M.; Adachi, H.; Hashimoto, T.; Inui, H.; Yamaguchi, M. Defect and Electronic Structure of TiSi2 Thin Films Produced by Co-Pputterings. Part II: Chemical Bonding and Electron Energy-Loss Near-Edge Structures. Acta Mater. 2001, 49, 2321−2328. (49) Seabourne, C. R.; Ross, I. M.; Rainforth, W. M.; Scott, A. J.; Mendis, B. G.; Hovespian, P. E. EELS and ELNES Studies of NanoScale Nitride Multilayers Deposited by Unbalanced Magnetron Sputtering. J. Phys.: Conf. Ser. 2010, 241, 012046. (50) van Benthem, K.; Kohl, H. Methods for ELNES-Quantification: Characterization of the Degree of Inversion of Mg-Al-Spinels. Micron 2000, 31, 347−354. (51) Brunner, J.; Thuler, M.; Veprek, S.; Wild, R. X-Ray Photoelectron Study of Amorphous Phosphorus Prepared by Plasma Chemical-Transport - Comparison with Crystalline Polymorphs. J. Phys. Chem. Solids 1979, 40, 967−971.

778

DOI: 10.1021/acs.jpclett.5b00043 J. Phys. Chem. Lett. 2015, 6, 773−778