777e JLED-2 is designed to observe the atomic arrangement of surfaces or physical and chemical information on the surface-layers of single crystals. This new apparatus incorporates a specially developed low snergy electron gun which has a wide variable accelerating /oltage range from 6 eV to 1000 eV. The ion getter and sorption pumps can evacuate the stainless steel diffraction shamber to an order of 1 0 1 0 Torr with minimum contamiTation, ensuring accurate and easy observation of surface :ransport, photoelectric emmission, vapor deposition, and ;hemical kinetics, as well as the more directly related studies of clean crystal surfaces, adsorption, oxidation, corrosion, epitaxial growth, catalytic process, etc.
Dther f e a t u r e s : • Unique double screen system: spherical fluorescent screen for direct observation of back-scattered reflection beams, and plane fluorescent screen for forward-scat tered beams permitting the observation of diffraction images at a high accelerating voltage. • T w o repeller grids to obtain clean images at low accel erating voltages with minimized background noises. • Wide specimen movements: 3 6 0 ° rotation, vertical 10 mm, horizontal 5 m m . • Specimen heating temperatures up to 1200°C by elec tron bombardment system. • Special attachments: Farady cup for current distribu tion measurement; specimen heating; cooling; clearing
Figs 1 and 2 show diffraction images obtained by vapor deposition of A l on Si (111) surface. As shown in Fig. 2, only the super-lattice structure of Si (11 l)-f5x ν 3 R (30°)-AI appears when applied with the accelerating voltage of 11V.
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