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Functional Inorganic Materials and Devices
Light-controlled nanoscopic writing of electronic memories using the tip-enhanced bulk photovoltaic effect Zhengdong Luo, Daesung Park, Ming-Min Yang, and Marin Alexe ACS Appl. Mater. Interfaces, Just Accepted Manuscript • DOI: 10.1021/acsami.8b22638 • Publication Date (Web): 05 Feb 2019 Downloaded from http://pubs.acs.org on February 5, 2019
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ACS Applied Materials & Interfaces
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Light-controlled nanoscopic writing of electronic memories using the tip-enhanced bulk photovoltaic effect
Zheng-Dong Luo1,*, Dae-Sung Park2, Ming-Min Yang1,* and Marin Alexe1,* 1. Department of Physics, University of Warwick, Coventry CV4 7AL, UK 2. Centre for Innovation Competence SiLi-nano, Martin-Luther-University Halle-Wittenberg, 06120 Halle (Saale), Germany *Email:
[email protected];
[email protected];
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Abstract The light control of non-volatile nanoscale memories could represent a fundamental step towards novel optoelectronic devices with memory and logic functionalities. However, most of the proposed devices exhibit insufficient control in terms of the reversibility, data retention, photosensitivity, limited-photoactive area, etc. Here, in a proof-of-concept work, we demonstrate the use of tip-enhanced bulk photovoltaic effect (BPV) to realize programmable nanoscopic writing of non-photoactive electronic devices by light control. We show that electronic properties of solid-state memory devices can be reversibly and location precisely manipulated in nanoscale using the bulk photovoltaic effect in combination with the nanoscale contact connection, i.e, atomic force microscopy (AFM) probe technique in this work. More than 105 % reversible switching of tunnelling electroresistance of ferroelectric tunnel junctions is exclusively achieved by light control. Using the same light-controlled AFM probe technique, we also present precise nanoscopic and multiple-state writing of LaAlO3/SrTiO3 twodimensional electron gas (2DEG) based field-effect transistors. The tip-enhanced BPV effect can offer a novel avenue for reversible and multistate light control of a wide range of electronic memory devices in nanoscale and may lead to more sophisticated functionalities in optoelectronic applications.
Keywords: nanoscopic optoelectronic memories, ferroelectric tunnel junction, bulk photovoltaic effect, two-dimensional electron gas, atomic force microscopy.
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ACS Applied Materials & Interfaces
1. Introduction Light control of electronic data storage elements has led to new paradigms for optoelectronic memory and logic systems, which are in great demand for future multifunctional agile information storage and computing science.1-11 Implementing such optoelectronic memory systems, especially for the post-Moore era, requires the ability to: (i) reversibly read-write the electronic data bits through the optical means, and (ii) integrate optical and electronic components alongside at nanoscale to increase data capabilities. Recently, a variety of platforms, including but not limited to semiconductor devices,2, 12 organic memory cells,3, 6 emerging 2D materials4, 8, 9 and resistive switching metal oxides,1, 7, 13 have been extensively explored in order to engineer the high-performance optoelectronic memories. The majority of the aforementioned devices are built upon materials with electronic-photonic coupling and operated under the strategy by exploiting the light-induced change of electronic properties in photo- and electro-active materials. A strong coupling of electronic and photonic properties is a prerequisite for those materials which makes the intergration of both superior photoresponse and excellent electronic properties in one single material a great challenge. Therefore, despite the practical potential demonstrated so far, such device strategy has shown limits in terms of the efficient combination of key memory performance parameters such as high data write/read speed, long retention time, low fabrication cost and power consumption, longterm endurance, low fabrication complexity of scaling down, etc. with superior photoresponse behaviors like response efficiency, reversibility, etc. in one single platform.14, 15 An alternative route employing hybrid integration of the separated high-performance photoactive materials and electronic memory materials in one device has recently emerged.9, 14 In such a hybrid platform, the photoactive material could control the electronic properties of the electroactive component under the light input. This strategy could be advantageous to conventional optoelectronic devices as it can add light as a control parameter to those electronic memory materials even without any photoactive properties. Unfortunately, the nanoscopic integration of photoactive materials with high density and non-volatile electronic memory elements towards high performance optoelectronic memories still remains a great challenge. To build up practical optoelectronic memories which are manipulatable in nanoscale and of full light control, high-performance photoactive element and efficient integration method are thus requried.
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In this work, we demonstrate the use of tip-enhanced bulk photovoltaic (BPV) effect to realize the full optical control of electronic memories. In particular, we chose atomic force microscopy (AFM) cantilever which is of typically 30 nm in radius as the nanosize contact to enable the tip-enhanced BPV effect. For all the measurements, a system comprising the conventional AFM and a bulk photovoltaic cell playing the role of the photo-responsive component was ultizsed. Instead of using the photovoltaic material for the energy harvesting, we choose the BPV cell as an electric field provider which enables the light-controlled manipulation of electronic properties in solid-state memories through the AFM probe, or more generally speaking, any contact at nanoscale (
