Article pubs.acs.org/cm
Low-Temperature Atomic Layer Deposition of Cobalt Oxide as an Effective Catalyst for Photoelectrochemical Water-Splitting Devices Jiyeon Kim,† Tomi Iivonen,‡ Jani Ham ̈ al̈ aï nen,‡ Marianna Kemell,‡ Kristoffer Meinander,§ §,⊥ Kenichiro Mizohata, Lidong Wang,† Jyrki Raï san̈ en,§ Radim Beranek,*,†,∥ Markku Leskela,̈ ‡ and Anjana Devi*,† †
Inorganic Materials Chemistry, Faculty of Chemistry and Biochemistry, Ruhr-University Bochum, Universitätstr. 150, 44801 Bochum, Germany ‡ Laboratory of Inorganic Chemistry, Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland § Division of Materials Physics, Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 Helsinki, Finland ∥ Institute of Electrochemistry, Ulm University, Albert-Einstein-Allee 47, 89081 Ulm, Germany S Supporting Information *
ABSTRACT: We have developed a low-temperature atomic layer deposition (ALD) process for depositing crystalline and phase pure spinel cobalt oxide (Co3O4) films at 120 °C using [Co(tBu2DAD)2] and ozone as coreagent. X-ray diffraction, UV−vis spectroscopy, atomic force microscopy, field emission scanning electron microscopy, X-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis were performed to characterize the structure and properties of the films. The asdeposited Co3O4 films are crystalline with a low amount of impurities (
