Microstructured Porous Pyramid-Based Ultrahigh Sensitive Pressure

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Research Article Cite This: ACS Appl. Mater. Interfaces 2019, 11, 19472−19480

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Microstructured Porous Pyramid-Based Ultrahigh Sensitive Pressure Sensor Insensitive to Strain and Temperature Jun Chang Yang,† Jin-Oh Kim,† Jinwon Oh,† Se Young Kwon,† Joo Yong Sim,‡ Da Won Kim,† Han Byul Choi,† and Steve Park*,† †

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Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea ‡ Bio-Medical IT Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Republic of Korea S Supporting Information *

ABSTRACT: An ultrahigh sensitive capacitive pressure sensor based on a porous pyramid dielectric layer (PPDL) is reported. Compared to that of the conventional pyramid dielectric layer, the sensitivity was drastically increased to 44.5 kPa−1 in the pressure range