Monolithically Integrated Perovskite ... - ACS Publications

Oct 2, 2018 - Daniel Schall,. †. Carlo A. R. Perini,. ‡ ... AMO GmbH, Otto-Blumenthal-Straße 25, 52074 Aachen, Germany. ‡. Center for Nano Scie...
1 downloads 0 Views 1MB Size
Subscriber access provided by UNIV OF DURHAM

Communication

Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication Piotr Cegielski, Anna Lena Giesecke, Stefanie Neutzner, Caroline Porschatis, Marina Gandini, Daniel Schall, Carlo Perini, Jens Bolten, Stephan Suckow, Satender Kataria, Bartos Chmielak, Thorsten Wahlbrink, Annamaria Petrozza, and Max C. Lemme Nano Lett., Just Accepted Manuscript • DOI: 10.1021/acs.nanolett.8b02811 • Publication Date (Web): 02 Oct 2018 Downloaded from http://pubs.acs.org on October 3, 2018

Just Accepted “Just Accepted” manuscripts have been peer-reviewed and accepted for publication. They are posted online prior to technical editing, formatting for publication and author proofing. The American Chemical Society provides “Just Accepted” as a service to the research community to expedite the dissemination of scientific material as soon as possible after acceptance. “Just Accepted” manuscripts appear in full in PDF format accompanied by an HTML abstract. “Just Accepted” manuscripts have been fully peer reviewed, but should not be considered the official version of record. They are citable by the Digital Object Identifier (DOI®). “Just Accepted” is an optional service offered to authors. Therefore, the “Just Accepted” Web site may not include all articles that will be published in the journal. After a manuscript is technically edited and formatted, it will be removed from the “Just Accepted” Web site and published as an ASAP article. Note that technical editing may introduce minor changes to the manuscript text and/or graphics which could affect content, and all legal disclaimers and ethical guidelines that apply to the journal pertain. ACS cannot be held responsible for errors or consequences arising from the use of information contained in these “Just Accepted” manuscripts.

is published by the American Chemical Society. 1155 Sixteenth Street N.W., Washington, DC 20036 Published by American Chemical Society. Copyright © American Chemical Society. However, no copyright claim is made to original U.S. Government works, or works produced by employees of any Commonwealth realm Crown government in the course of their duties.

Page 1 of 29 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Nano Letters

Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable TopDown Fabrication

†Piotr J. Cegielski, †Anna Lena Giesecke*, ‡Stefanie Neutzner, †Caroline Porschatis, ‡Marina Gandini, †Daniel Schall, ‡Carlo A. R. Perini, †Jens Bolten, †Stephan Suckow, §Satender Kataria, †Bartos Chmielak, †Thorsten Wahlbrink, ‡Annamaria Petrozza, †§Max C. Lemme

†AMO GmbH, Otto-Blumenthal-Straße 25, 52074 Aachen, Germany, *E-mail: [email protected] ‡Center for Nano Science and Technology @Polimi, Istituto Italiano di Tecnologia, via Giovanni Pascoli 70/3, 20133 Milan, Italy §RWTH Aachen University, Elektrotechnik und Informationstechnik, Lehrstuhl für Elektronische Bauelemente, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany

Keywords: perovskites, lasers, lithography, integrated photonics

ACS Paragon Plus Environment

1

Nano Letters 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Page 2 of 29

Abstract

Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low temperature processing leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through costly and inefficient hybrid integration of III-V semiconductors. Until now however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography and therefore on existing semiconductor manufacturing infrastructure has been established. Here, the first methylammonium lead iodide perovskite micro-disc lasers monolithically integrated into silicon nitride PICs by such a top-down process is presented. The lasers show a record low lasing threshold of 4.7 µJcm-2 at room temperature for monolithically integrated lasers, which are CMOS compatible and can be integrated in the back-end-of-line (BEOL) processes.

Main text Silicon photonics is recognized as a key photonic integration technology due to its compatibility with the CMOS manufacturing infrastructure and the potential for integration with back-end-ofline Si microelectronics, and addresses applications ranging from telecommunications1 to gas sensing2 to lab-on-chip.3 The full potential of this photonic platform is however limited by challenges regarding the integration of laser sources, caused by incompatibilities of active III-V laser materials with silicon technology.4

ACS Paragon Plus Environment

2

Page 3 of 29 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

Nano Letters

The crystal lattice mismatch between Si and III-V semiconductors leads to defects during epitaxy, which act as nonradiative recombination centers and strongly reduce light emission.5,6 Despite considerable progress in recent years, the integration of III-Vs by buffered5 or bufferless4 epitaxy cannot meet lattice defect requirements and further exceeds the thermal budget of CMOS electronics. Hence, available systems solutions are limited to III-V wafers bonded to Si waveguide wafers7 or transfer printed III-V chips.8 Metal-halide perovskites in contrast, can be deposited on arbitrary substrates via low temperature (