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Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication Piotr Cegielski, Anna Lena Giesecke, Stefanie Neutzner, Caroline Porschatis, Marina Gandini, Daniel Schall, Carlo Perini, Jens Bolten, Stephan Suckow, Satender Kataria, Bartos Chmielak, Thorsten Wahlbrink, Annamaria Petrozza, and Max C. Lemme Nano Lett., Just Accepted Manuscript • DOI: 10.1021/acs.nanolett.8b02811 • Publication Date (Web): 02 Oct 2018 Downloaded from http://pubs.acs.org on October 3, 2018
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Nano Letters
Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable TopDown Fabrication
†Piotr J. Cegielski, †Anna Lena Giesecke*, ‡Stefanie Neutzner, †Caroline Porschatis, ‡Marina Gandini, †Daniel Schall, ‡Carlo A. R. Perini, †Jens Bolten, †Stephan Suckow, §Satender Kataria, †Bartos Chmielak, †Thorsten Wahlbrink, ‡Annamaria Petrozza, †§Max C. Lemme
†AMO GmbH, Otto-Blumenthal-Straße 25, 52074 Aachen, Germany, *E-mail:
[email protected] ‡Center for Nano Science and Technology @Polimi, Istituto Italiano di Tecnologia, via Giovanni Pascoli 70/3, 20133 Milan, Italy §RWTH Aachen University, Elektrotechnik und Informationstechnik, Lehrstuhl für Elektronische Bauelemente, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
Keywords: perovskites, lasers, lithography, integrated photonics
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Abstract
Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low temperature processing leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through costly and inefficient hybrid integration of III-V semiconductors. Until now however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography and therefore on existing semiconductor manufacturing infrastructure has been established. Here, the first methylammonium lead iodide perovskite micro-disc lasers monolithically integrated into silicon nitride PICs by such a top-down process is presented. The lasers show a record low lasing threshold of 4.7 µJcm-2 at room temperature for monolithically integrated lasers, which are CMOS compatible and can be integrated in the back-end-of-line (BEOL) processes.
Main text Silicon photonics is recognized as a key photonic integration technology due to its compatibility with the CMOS manufacturing infrastructure and the potential for integration with back-end-ofline Si microelectronics, and addresses applications ranging from telecommunications1 to gas sensing2 to lab-on-chip.3 The full potential of this photonic platform is however limited by challenges regarding the integration of laser sources, caused by incompatibilities of active III-V laser materials with silicon technology.4
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Nano Letters
The crystal lattice mismatch between Si and III-V semiconductors leads to defects during epitaxy, which act as nonradiative recombination centers and strongly reduce light emission.5,6 Despite considerable progress in recent years, the integration of III-Vs by buffered5 or bufferless4 epitaxy cannot meet lattice defect requirements and further exceeds the thermal budget of CMOS electronics. Hence, available systems solutions are limited to III-V wafers bonded to Si waveguide wafers7 or transfer printed III-V chips.8 Metal-halide perovskites in contrast, can be deposited on arbitrary substrates via low temperature (
