Neon Ion Beam Lithography (NIBL) - Nano Letters (ACS Publications)

Sep 7, 2011 - Semiconductor Nanowire Fabrication by Bottom-Up and Top-Down Paradigms. Richard G. Hobbs , Nikolay Petkov , and Justin D. Holmes. Chemis...
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LETTER pubs.acs.org/NanoLett

Neon Ion Beam Lithography (NIBL) Donald Winston,†,§ Vitor R. Manfrinato,†,§ Samuel M. Nicaise,†,§ Lin Lee Cheong,†,§ Huigao Duan,†,|| David Ferranti,‡ Jeff Marshman,‡ Shawn McVey,‡ Lewis Stern,‡ John Notte,‡ and Karl K. Berggren*,† † ‡

Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States Carl Zeiss NTS, LLC, Peabody, Massachusetts 01960, United States

bS Supporting Information ABSTRACT: Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence