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Oxide crystal structure with square-pyramidally coordinated vanadium for integrated electronics manufactured at ultra-low processing temperatures Matjaz Valant, Jasminka Popovic, Mojca Vr#on Mihelj, Sanja Burazer, Angela Altomare, and Anna Moliterni ACS Sustainable Chem. Eng., Just Accepted Manuscript • Publication Date (Web): 25 May 2017 Downloaded from http://pubs.acs.org on May 28, 2017
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ACS Sustainable Chemistry & Engineering
Oxide crystal structure with square-pyramidally coordinated vanadium for integrated electronics manufactured at ultra-low processing temperatures
Matjaz Valant,1,2 Jasminka Popović3, Mojca Vrčon Mihelj,2 Sanja Burazer,3 Angela Altomare4, Anna Moliterni4
1
Institute of Fundamental and Frontier Sciences, University of Electronic Science and
Technology of China, No.4, Section 2, North Jianshe Road, Chengdu 610054, China 2
Materials Research Laboratory, University of Nova Gorica, Vipavska 13, 5000 Nova
Gorica, Slovenia 3
Laboratory for Synthesis and Crystallography of Functional Materilas, Center of Excellence
for Advanced Materials and Sensing Devices, Division for Materials Physics, Rudjer Boskovic Institute, Bijenička cesta 54, 10000 Zagreb, Croatia 4
Istituto di Cristallografia, CNR, Sede di Bari, Via G. Amendola 122/o, 70126 Bari, Italy
Corresponding authors e-mail:
[email protected] 1 ACS Paragon Plus Environment
ACS Sustainable Chemistry & Engineering
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Abstract: The study describes a targeted synthesis of a new dielectric material for an emerging ULTCCI technology (ultra low temperature co-fired ceramic technology), which resulted in discovery of a PbTeV2O8 phase. A structural solution from powder data showed that the phase belongs to no known crystallographic family and is formed from V5+ ions in an unusual squarepyramidal coordination. It is characterized by a very low processing temperatures that enables integration with Al electrodes and, potentially, even with polymer and paper substrates. Dielectric properties in combination with the processing parameters qualify the PbTeV2O8 phase for integration, as mid-permittivity capacitors, in ULTCC-I modules.
Keywords: vanadate, tellurium oxide, ULTCC, Aluminum electrode, cosintering
Introduction Within the last decades, technological and scientific importance of vanadates has rapidly increased due to their fascinating functional properties that are well suited for upcoming advanced technologies. They are highly efficient materials for photoelectrochemical energy conversion, 1,2 as fast oxide ion conductors for solid fuel cells 3,4 or electrode material for lithium batteries.5 Another technology area, where the vanadates are becoming the material of choice, is electronics. The vanadates have already been applied as passive electronic components for integration on inorganic substrates that require modest processing temperatures or with low-melting metal electrodes (so-called low and ultra-low temperature co-fired ceramics – LTCC and ULTCC). 6 For instance, for the ULTCC technology the processing temperatures
